STGW20H65FB

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Datasheet Trench gate field-stop 650 V, 20 A high speed HB series IGBT Features 1 TO-3PF 1 2 3 TAB 1 2 3 TO-3P TO-247 1 2 3 • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 20 A • • • Tight parameters distribution Safe paralleling Low thermal resistance Applications C(2, TAB) • • • • G(1) Photovoltaic inverters Power factor correction Welding High-frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20H65FB STGW20H65FB STGWT20H65FB DS10546 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Parameter Value TO-247, TO-3P TO-3PF Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 40 A Continuous collector current at TC = 100 °C 20 A ICP Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) PTOT Total power dissipation at TC = 25 °C TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C IC (1) TJ 168 3.5 kV 86.7 W 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS10546 - Rev 3 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-247, TO-3P TO-3PF 0.9 1.73 50 Unit °C/W °C/W page 2/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.55 VGE = 15 V, IC = 20 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 20 A, TJ = 175 °C 1.75 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 20 A VGE(th) Max. 6 2.00 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V 250 nA Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS10546 - Rev 3 Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 20 A, VGE = 0 to 15 V (see Figure 26. Gate charge test circuit) Min. Typ. Max. Unit - 2764 - pF - 80 - pF - 60 - pF - 120 - nC - 20 - nC - 50 - nC page 3/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Unit Turn-on delay time - 30 - ns Current rise time - 11 - ns - 1400 - A/µs - 139 - ns - 20 - ns - 77 - µJ Turn-on current slope Turn-off delay time Current fall time Test conditions VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V (see Figure 25. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 170 - µJ Total switching energy - 247 - µJ Turn-on delay time - 29 - ns Current rise time - 12 - ns - 1352 - A/µs - 147 - ns - 38 - ns - 88 - µJ Eon Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 25. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 353 - µJ Total switching energy - 441 - µJ Ets 1. Including the reverse recovery of the external SiC diode STPSC206W. 2. Including the tail of the collector current. DS10546 - Rev 3 page 4/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics (TJ = 25°C) IC (A) GIPG260820141108FSR 70 VGE =15 V 13V IC (A) 50 40 40 30 30 20 20 10 3 4 VCE(V) Figure 3. Transfer characteristics IC (A) GIPG260820141127FSR 25 °C 70 VCE=10 V 9V 7V 10 7V 2 13V 60 9V 1 VGE =15 V 11V 50 0 0 GIPG260820141120FSR 80 11V 60 Figure 2. Output characteristics (TJ = 175°C) 0 0 2 1 3 4 VCE(V) Figure 4. Collector current vs case temperature for TO-247 and TO-3P GIPG260820141136FSR IC (A) 40 175 °C 60 30 50 40 20 30 10 20 10 7 8 9 10 VGE(V) Figure 5. Collector current vs case temperature for TO-3PF IC (A) GADG150320211416CCT 0 0 VGE≥ 15V, T J≤ 175 °C 25 50 75 100 125 150 Figure 6. VCE(sat) vs junction temperature GIPG260820141153FSR VCE(sat) (V) VGE= 15 V IC= 40 A 2.2 30 TC(°C) 2.0 VGE ≥ 15 V, TJ ≤ 175 °C 1.8 20 IC= 20 A 1.6 10 1.4 IC= 10 A 0 25 DS10546 - Rev 3 75 125 175 TC (°C) 1.2 -50 0 50 100 150 TJ(°C) page 5/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics (curves) Figure 7. Power dissipation vs case temperature for TO-247 and TO-3P GIPG280120141359FSR PTOT (W) 160 Figure 8. Power dissipation vs case temperature for TO-3PF PTOT (W) GADG150320211416PDT 80 140 120 VGE ≥ 15 V, TJ ≤ 175 °C 60 40 20 VGE ≥ 15V, TJ ≤ 175 °C C Figure 9. Forward bias safe operating area for TO-247 and TO-3P GIPG260820141333FSR IC (A) 0 25 75 125 175 TC (°C) Figure 10. Forward bias safe operating area for TO-3PF IC (A) GADG150320211416FSOA 10 2 10 10 µs tp =10µs 10 1 100 µs tp =100µs 1 ms 1 10 0 Single pulse TC = 25 °C TJ ≤ 175 °C VGE = 15 V 10 1 10 2 (single pulse TC = 25 °,C TJ ≤ 175 °;C, VGE=15 V) 0.1 1 10 100 VCE(V) Figure 11. Collector current vs. switching frequency for TO-247 and TO-3P IC (A) GIPG260820141342FSR 60 10 -1 10 0 VCE (V) Figure 12. Collector current vs. switching frequency for TO-3PF IC (A) GADG100320211417CCS 40 Tc=80 °C tp =1ms TC = 80 °C 50 40 30 Tc=100 °C 30 20 10 20 DS10546 - Rev 3 Rectangular current shape Rectangular current shape (Duty cycle = 0.5, VCC = 400 V, 10 (Duty cycle = 0.5, VCC = 400 V, RG = 10 Ω, VGE = 0 to 15 V, RG = 10 Ω, VGE = 0 to 15 V, 0 TJ = 175 °C) 1 TC = 100 °C 10 TJ = 175 °C) f (kHz) 0 10 0 10 1 10 2 f (kHz) page 6/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics (curves) Figure 13. Normalized VGE(th) vs junction temperature V GE(th) (norm) AM16060v1 VCE = VGE, IC = 1 mA Figure 14. Normalized V(BR)CES vs junction temperature V(BR)CES (norm) AM16059v1 IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 T J (°C) Figure 15. Switching energy vs temperature GIPG260820141404FSR E (μJ) 350 VCC= 400V, VGE= 15V Rg= 10Ω, IC= 20A 0.9 -50 0 50 100 Figure 16. Switching energy vs gate resistance GIPG260820141408FSR E (μJ) 550 EOFF VCC= 400V, VGE= 15V IC= 20A, TJ= 175 °C 450 250 T J (°C) 150 EOFF 350 EON 250 150 EON 150 50 20 40 60 80 100 120 140 160 TJ(°C) Figure 17. Switching energy vs collector current GIPG260820141358FSR E (μJ) VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175°C) E 50 3 17 24 31 38 45 RG(Ω) Figure 18. Switching energy vs collector emitter voltage GIPG260820141413FSR E (μJ) 400 600 10 TJ= 175°C, VGE= 15V Rg= 10Ω, IC= 20A EOFF 300 400 200 EON 200 0 0 DS10546 - Rev 3 EON 10 20 30 100 40 IC(A) 0 150 250 350 450 VCE(V) page 7/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics (curves) Figure 19. Switching times vs collector current GIPG260820141417FSR t(ns) Figure 20. Switching times vs gate resistance GIPG260820141422FSR t(ns) TJ= 175°C, VGE= 15V IC= 20A, VCC= 400V tdoff tdoff 100 100 tdon tf tdon tf 10 10 tr TJ= 175°C, VGE= 15V Rg= 10Ω, VCC= 400V tr 1 0 20 10 30 IC(A) 40 Figure 21. Capacitance variations 10 20 30 40 Rg(Ω) Figure 22. Gate charge vs gate-emitter voltage GIPG260820141434FSR C(pF) 10 0 GIPG260820141445FSR VGE (V) 16 10000 Cies VCC= 520V, I C= 20 A IG= 1mA 14 12 1000 10 8 6 100 Coes Cres 10 0.1 1 VCE(V) 10 Figure 23. Thermal impedance for TO-247 and TO-3P ZthTO2T_B K 4 2 0 0 ZthTOF3T_A K δ=0.5 0.2 0.2 0.1 0.05 0.05 -1 -1 10 10 0.02 0.02 0.01 Zth = k*RthJC δ = tp/t 0.01 Zth = k*RthJC δ = tp/t Single pulse Single pulse tp tp t -2 10 -5 10 DS10546 - Rev 3 Qg(nC) 120 Figure 24. Thermal impedance for in TO-3PF δ=0.5 0.1 80 40 -4 10 -3 10 -2 10 t -2 -1 10 tp (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 tp (s) page 8/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Test circuits 3 Test circuits Figure 26. Gate charge test circuit Figure 25. Test circuit for inductive load switching C A A k L=100 µH G E B B RG 3.3 µF C G + k 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 27. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS10546 - Rev 3 page 9/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF package information Figure 28. TO-3PF package outline 7627132_6 DS10546 - Rev 3 page 10/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB TO-3PF package information Table 6. TO-3PF mechanical data Dim. mm Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 DS10546 - Rev 3 Typ. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15.00 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10.00 10.20 page 11/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB TO-247 package information 4.2 TO-247 package information Figure 29. TO-247 package outline aaa 0075325_10 DS10546 - Rev 3 page 12/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS10546 - Rev 3 Typ. 5.50 5.70 0.04 0.10 page 13/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB TO-3P package information 4.3 TO-3P package information Figure 30. TO-3P package outline 8045950_3 DS10546 - Rev 3 page 14/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB TO-3P package information Table 8. TO-3P package mechanical data Dim. DS10546 - Rev 3 mm Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4.00 page 15/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Ordering information 5 Ordering information Table 9. Order codes DS10546 - Rev 3 Order code Marking Package STGFW20H65FB G20H65FB TO-3PF STGW20H65FB GW20H65FB TO-247 STGWT20H65FB GWT20H65FB TO-3P Packing Tube page 16/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Revision history Table 10. Document revision history Date Revision 28-Aug-2014 1 Changes Initial release. Updated applications in cover page. 15-Apr-2020 2 Updated Table 9. Order codes. Minor text changes. Updated Section 1 Electrical ratings. 16-Mar-2021 3 Updated Figure 5. Collector current vs case temperature for TO-3PF, Figure 8. Power dissipation vs case temperature for TO-3PF, Figure 10. Forward bias safe operating area for TO-3PF and Figure 12. Collector current vs. switching frequency for TO-3PF. Updated Section 4.2 TO-247 package information. Minor text changes. DS10546 - Rev 3 page 17/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 5 4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 DS10546 - Rev 3 page 18/19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS10546 - Rev 3 page 19/19