STGW80H65FB-4

STGW80H65FB-4 Trench gate field-stop IGBT, HB series 650 V, 80 A high speed in TO247-4 package Datasheet - production data Features         VCE(sat) = 1.6 V (typ.) @ IC = 80 A Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Safe paralleling Tight parameter distribution Low thermal resistance Kelvin pin Applications   Figure 1: Internal schematic diagram Photovoltaic inverter High frequency converter Description C(1) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G(4) K(3) E(2) NG4K3E2C1_no_d Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube April 2017 DocID029224 Rev 3 This is information on a product in full production. 1/14 www.st.com Contents STGW80H65FB-4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 5 2/14 TO247-4 package information ......................................................... 11 Revision history ............................................................................ 13 DocID029224 Rev 3 STGW80H65FB-4 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 650 V Continuous collector current at TC = 25 °C 120(1) Continuous collector current at TC = 100 °C 80 Pulsed collector current 300 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 469 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 IC ICP(2)(3) TJ A °C Notes: (1)Current (2)Pulse level is limited by bond wires. width is limited by maximum junction temperature (t p < 1 ms, TJ < 175 °C). (3)Defined by design, not tested. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID029224 Rev 3 Value 0.32 50 Unit °C/W 3/14 Electrical characteristics 2 STGW80H65FB-4 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 80 A, TJ = 125 °C 1.8 VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 80 A VGE(th) Max. 6 2.0 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol 4/14 Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 80 A, VGE = 0 to 15 V (see Figure 23: "Gate charge test circuit") DocID029224 Rev 3 Min. Typ. Max. - 10.5 - - 0.38 - - 0.21 - - 414 - - 78 - - 170 - nF nC STGW80H65FB-4 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 75 - ns Current rise time - 35 - ns - 1750 - A/µs - 336 - ns - 23 - ns - 1 - mJ Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 22: "Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy - 1.7 - mJ Total switching energy - 2.7 - mJ Turn-on delay time - 66 - ns - 38 - ns - 1670 - A/µs - 403 - ns - 45 - ns - 1.5 - mJ Eoff Ets td(on) tr Current rise time (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 22: "Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy - 2.47 - mJ Total switching energy - 3.97 - mJ Eoff Ets Notes: (1)Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW80H65DFB-4. (2)Including the tail of the collector current. DocID029224 Rev 3 5/14 Electrical characteristics 2.1 STGW80H65FB-4 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature PTOT (W) GIPD160920130948FSR VGE = 15 V, TJ = 175 °C Figure 3: Collector current vs. case temperature GIPD160920130941FSR IC (A) VGE = 15 V, TJ = 175 °C 120 400 100 300 80 60 200 40 100 20 0 0 50 100 150 TC(°C) 0 0 25 50 75 100 125 150 TC(°C) Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current 6/14 DocID029224 Rev 3 STGW80H65FB-4 Electrical characteristics Figure 8: Collector current vs. switching frequency IC (A) 160 Figure 9: Forward bias safe operating area IGBT060715EWFRWCCS 140 120 100 TC= 100 °C TC= 80 °C 80 60 40 20 Rectangular current shape (duty cycle = 0.5, VCC= 400 V, RG= 10 Ω, VGE= 0/15 V, TJ= 175 °C) 0 0 10 1 10 2 10 f (kHz) Figure 10: Transfer characteristics Figure 11: Normalized VGE(th) vs. junction temperature Figure 12: Normalized V(BR)CES vs. junction temperature Figure 13: Capacitance variations DocID029224 Rev 3 7/14 Electrical characteristics STGW80H65FB-4 Figure 14: Gate charge vs. gate-emitter voltage Figure 15: Switching energy vs. collector current Figure 16: Switching energy vs. gate resistance Figure 17: Switching energy vs. temperature Figure 18: Switching energy vs. collector emitter voltage Figure 19: Switching times vs. collector current 8/14 DocID029224 Rev 3 STGW80H65FB-4 Electrical characteristics Figure 20: Switching times vs. gate resistance DocID029224 Rev 3 Figure 21: Thermal impedance 9/14 Test circuits 3 STGW80H65FB-4 Test circuits Figure 22: Test circuit for inductive load switching Figure 23: Gate charge test circuit Figure 24: Switching waveform 10/14 DocID029224 Rev 3 STGW80H65FB-4 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO247-4 package information Figure 25: TO247-4 package outline DocID029224 Rev 3 11/14 Package information STGW80H65FB-4 Table 7: TO247-4 mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 1.29 1.20 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 P1 7.40 P2 2.40 Q 5.60 S 12/14 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 DocID029224 Rev 3 STGW80H65FB-4 5 Revision history Revision history Table 8: Document revision history Date Revision 13-Apr-2016 1 First release 22-Apr-2016 2 Minor text changes to improve the document readability 3 Updated title and features on cover page. Updated Table 2: "Absolute maximum ratings". Updated Figure 9: "Forward bias safe operating area". Minor text changes 03-Apr-2017 Changes DocID029224 Rev 3 13/14 STGW80H65FB-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 14/14 DocID029224 Rev 3