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STGW35NB60S

STGW35NB60S

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    IGBT 600V 70A 200W TO247

  • 数据手册
  • 价格&库存
STGW35NB60S 数据手册
STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH™ IGBT Features Type VCES STGW35NB60S 600V IC VCE(sat) (Max)@ 25°C @100°C < 1.7V ■ Low on-voltage drop (VCEsat) ■ Low input capacitance ■ High current capability 35A TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. Applications ■ Light dimmer ■ HID ■ Welding ■ Motor control ■ Static relays ) (s ) s t( c u Internal schematic diagram d o r P e t le o s b O t c u d o r P e t e l o s b O Order code Part number Marking Package Packaging STGW35NB60S GW35NB60S TO-247 Tube March 2007 Rev 1 1/13 www.st.com 13 STGW35NB60S Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 6 3 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/13 o s b O - o r P ) s t( STGW35NB60S 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Value Unit Collector-emitter voltage (VGS = 0) 600 V IC (1) Collector current (continuous) at 25°C 70 A IC (1) Collector current (continuous) at 100°C 35 A Collector current (pulsed) 250 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25°C 200 W – 55 to 150 °C ICM (2) Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ---------------------------------------------------------------------------------------------------C C R ¥V (T , I ) THJ – C CESAT ( MAX ) C C c u d 2. Pulse width limited by max. junction temperature Table 2. Thermal resistance Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max ) s ( ct o s b O - e t le ) s t( o r P Value Unit 0.625 °C/W 50 °C/W u d o r P e t e l o s b O 3/13 STGW35NB60S Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter VBR(CES) Collector-Emitter Breakdown Voltage IC = 1mA, VGE = 0 VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 20A, VGE= 15V, IC= 20A, Tj= 125°C Gate Threshold Voltage VCE= VGE, IC= 250µA VGE(th) ICES VCE = Max Rating, Collector-Emitter Leakage VCE = Max Rating, Current (VGE = 0) Tc=125°C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 Forward Transconductance VCE = 10V, IC= 18A gfs Table 4. Parameter Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc ICL 4/13 so Test conditions Typ. 1.25 1.2 V V 5 V 10 100 µA µA uc ) s t( ± 100 d o r 20 b O - Typ. Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 20A, VGE = 15V, (see Figure 16) 83 10 27 Turn-Off SOA Minimum Current Vclamp = 480V , Tj = 125°C RG = 100Ω u d o 1.7 2.5 Min. 80 Unit V 1820 167 27 ) s ( ct Max. 600 VCE = 25V, f = 1 MHz, VGE = 0 r P e t e l o Min. P e let Dynamic Symbol s b O Test conditions nA S Max. Unit pF pF pF 115 nC nC nC A STGW35NB60S Electrical characteristics Table 5. Symbol Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480V, IC = 20A RG= 100Ω, VGE= 15V, see Figure 15 and 17 92 70 340 ns ns A/µs td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480V, IC = 20A RG= 100Ω, VGE= 15V, Tj= 125°C see Figure 15 and 17 80 73 320 ns ns A/µs tr(Voff) td(off) tf Off Voltage Rise Time Turn-off Delay Time Current Fall Time Vcc = 480V, IC = 20A, RGE = 100Ω , VGE = 5V, see Figure 15 and 17 0.78 1.1 0.79 µs µs µs tr(Voff) td(off) tf Off Voltage Rise Time Turn-off Delay Time Current Fall Time Vcc = 480V, IC = 20A, RGE=100Ω,VGE =15V, Tj=125°C see Figure 15 and 17 1.1 2.4 1.2 µs µs µs Table 6. Symbol Switching energy (inductive load) Parameter Test conditions e t le Eon Eoff(1) Ets Turn-on Switching Losses VCC = 480V, IC = 20A Turn-off Switching Losses RG=100Ω, VGE= 15V, see Figure 15 and 17 Total Switching Losses Eon Eoff(1) Ets V = 480V, IC = 20A Turn-on Switching Losses CC RG=100Ω, VGE= 15V, Turn-off Switching Losses Tj= 125°C Total Switching Losses see Figure 15 and 17 ) s ( ct o s b O - o r P c u d Min. Typ. ) s t( Max. Unit 0.84 7.4 8.24 mJ mJ mJ 0.86 11.5 12.4 mJ mJ mJ 1. Turn-off losses include also the tail of the collector current u d o r P e t e l o s b O 5/13 STGW35NB60S Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Normalized collector-emitter on voltage vs temperature c u d e t le Figure 5. ) s ( ct o r P e t e l o s b O 6/13 du Collector-emitter on voltage vs collector current ) s t( o r P o s b O Figure 6. Gate threshold vs temperature STGW35NB60S Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs gate charge c u d e t le ) s ( ct Figure 11. Switching losses vs temperature u d o ) s t( o r P o s b O - Figure 12. Switching losses vs collector current r P e t e l o s b O 7/13 STGW35NB60S Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA c u d e t le ) s ( ct u d o r P e t e l o s b O 8/13 o s b O - o r P ) s t( STGW35NB60S 3 Test Circuits Test Circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit c u d Figure 17. Switching waveform e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 9/13 STGW35NB60S Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/13 o s b O - o r P ) s t( STGW35NB60S Package mechanical data TO-247 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 3.65 0.140 5.50 0.177 L2 18.50 øP 3.55 øR 4.50 S 0.728 5.50 c u d 0.216 0.216 e t le ) s ( ct 0.143 ) s t( o r P o s b O - u d o r P e t e l o s b O 11/13 STGW35NB60S Revision history 5 Revision history Table 7. Revision history Date Revision 28-Mar-2007 1 Changes Initial release. c u d e t le ) s ( ct u d o r P e t e l o s b O 12/13 o s b O - o r P ) s t( STGW35NB60S Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ) s t( Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. c u d No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. e t le o r P UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. o s b O - UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. ) s ( ct u d o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. r P e t e l o ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. bs The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. O © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13
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