STGW40NC60KD

STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 • IGBT co-packaged with ultra fast free-wheeling diode 3 1 Applications TO-247 • High frequency inverters • Motor drivers Figure 1. Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGW40NC60KD GW40NC60KD TO-247 Tube March 2014 This is information on a product in full production. DocID14807 Rev 2 1/13 www.st.com 13 Contents STGW40NC60KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 DocID14807 Rev 2 STGW40NC60KD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Collector current (continuous) at TC = 25 °C 70 A IC(1) Collector current (continuous) at TC = 100 °C 38 A ICL(2) Turn-off latching current 220 A ICP (3) Pulsed collector current 220 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 250 W Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V 10 µs – 55 to 150 °C Value Unit Thermal resistance junction-case IGBT max. 0.5 °C/W Thermal resistance junction-case diode max. 1.5 °C/W Thermal resistance junction-ambient max 50 °C/W IF tscw Tj 1. Parameter Operating junction temperature Calculated according to the iterative formula: T J ( MAX ) – Tc I c ( Tc ) = ---------------------------------------------------------------------------------R thj – c × VCE ( sat ) ( MAX ) ⋅ ( T c ,I c ) 2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Symbol Rthj-case Rthj-amb Parameter DocID14807 Rev 2 3/13 Electrical characteristics 2 STGW40NC60KD Electrical characteristics TCASE=25°C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE= 0) VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TC = 125 °C ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA IGES Gate-emitter cut-off current (VCE = 0) VGE = ±20 V gfs (1) Forward transconductance VCE = 15 V , IC = 30 A Min. Typ. Max. Unit 600 V 2.1 2.7 1.9 4.5 V V 500 5 µA mA 6.5 V ±100 nA 20 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Dynamic Symbol 4/13 Parameter Test conditions Min. Typ. Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 2870 295 69 Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC = 30 A, VGE = 15 V (see Figure 18) - 135 27 69.5 DocID14807 Rev 2 Max. Unit - pF pF pF - nC nC nC STGW40NC60KD Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 480 V, IC = 30 A RG=10 Ω, VGE= 15 V, (see Figure 17) - 46 18.5 1530 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 480 V, IC = 30 A RG=10 Ω, VGE= 15 V, TC= 125 °C (see Figure 17) - 45 19 1400 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 30 A RG=10 Ω, VGE= 15 V, (see Figure 17) - 38 164 87 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 480 V, IC = 30 A, RG = 10 Ω, VGE = 15 V TC= 125 °C (see Figure 17) - 70 208 130 - ns ns ns Min. Typ. Max. Unit - 595 716 1311 - µJ µJ µJ - 808 1200 2008 - µJ µJ µJ Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Eon Eoff (1) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 30 A RG= 10 Ω, VGE= 15 V, (see Figure 17) Eon Eoff (1) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 30 A RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 17) 1. Turn-off losses include also the tail of the collector current. Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 30 A IF = 30 A, TC = 125 °C - 2.4 1.8 - V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, di/dt = 100 A/μs (see Figure 20) - 45 56 2.55 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 30 A,VR = 50 V, TC =125 °C, di/dt = 100 A/μs (see Figure 20) - 100 290 5.8 - ns nC A DocID14807 Rev 2 5/13 Electrical characteristics 2.1 STGW40NC60KD Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature HV43540 Gfs(S) HV43550 VCE(sat) (V) TJ=-50°C 2.7 15 2.4 IC=40A 13 2.1 TJ=25°C 11 1.8 IC=30A 1.5 9 TJ=150°C 1.2 IC=10A 7 0.9 5 4 6 8 10 12 14 16 18 IC(A) 0.6 -50 Figure 6. Gate charge vs. gate-source voltage 6/13 DocID14807 Rev 2 0 50 100 TJ(°C) Figure 7. Capacitance variations STGW40NC60KD Electrical characteristics Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current DocID14807 Rev 2 7/13 Electrical characteristics STGW40NC60KD Figure 14. Thermal Impedance Figure 15. Turn-off SOA Figure 16. Forward voltage drop vs. forward current IFM(A) 120 110 Tj=125˚C (Maximum values) 100 90 80 Tj=125˚C (Typical values) 70 60 Tj=25˚C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 8/13 1 2 3 4 5 6 DocID14807 Rev 2 STGW40NC60KD 3 Test circuits Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit AM01504v1 Figure 19. Switching waveform AM01505v1 Figure 20. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 DocID14807 Rev 2 AM01507v1 9/13 Package mechanical data 4 STGW40NC60KD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 21. TO-247 drawing 0075325_G 10/13 DocID14807 Rev 2 STGW40NC60KD Package mechanical data Table 9. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID14807 Rev 2 5.70 11/13 Revision history 5 STGW40NC60KD Revision history Table 10. Document revision history 12/13 Date Revision Changes 11-Jun-2008 1 Initial release 12-Mar-2014 2 Modified total switching losses typical value in Table 7: Switching energy (inductive load). Minor text changes. DocID14807 Rev 2 STGW40NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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