STL36DN6F7

STL36DN6F7 Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Features     Order code VDS RDS(on) max ID STL36DN6F7 60 V 27 mΩ 33 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications  Switching applications Description Figure 1: Internal schematic diagram This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL36DN6F7 36DN6F7 PowerFLAT™ 5x6 double island Tape and reel May 2017 DocID028259 Rev 3 This is information on a product in full production. 1/15 www.st.com Contents STL36DN6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 5 2/15 4.1 PowerFLAT 5x6 double island type C package information .............. 9 4.2 Packing information ......................................................................... 12 Revision history ............................................................................ 14 DocID028259 Rev 3 STL36DN6F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 33 A ID(1) Drain current (continuous) at TC = 100 °C 23 A ID(2) Drain current (continuous) at Tpcb = 25 °C 9 A ID(2) Drain current (continuous) at Tpcb =100°C 6.7 A IDM(1)(3) Drain current (pulsed) 132 A IDM(2)(3) Drain current (pulsed) 36 A PTOT (1) Total dissipation at TC = 25 °C 58 W PTOT (2) Total dissipation at Tpcb = 25°C 4.8 W -55 to 175 °C TJ Operating junction temperature range Tstg Storage temperature range Notes: (1)This value is rated according to Rthj-c. (2)The value is rated according to Rthj-pcb. (3)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Rthj-pcb (1) Value Unit Thermal resistance junction- case 2.6 °C/W Thermal resistance junction-pcb 31.3 °C/W Notes: (1)When mounted on FR-4 board of 1 inch2, 2oz Cu, t < 10 s. DocID028259 Rev 3 3/15 Electrical characteristics 2 STL36DN6F7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS= 0 V, ID = 1 mA IDSS Zero gate voltage drain current VDS = 60 V, VGS = 0 V 1 µA IGSS Gate-body leakage current VDS = 0 V ,VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.5 A 23 27 mΩ Min. Typ. Max. Unit - 420 - pF - 215 - pF - 16 - pF - 8 - nC - 2.3 - nC - 2.1 - nC Test conditions Min. Typ. Max. Unit VDD = 30 V, ID = 4.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 7.85 - ns - 3.25 - ns - 12.1 - ns - 3.95 - ns Min. Typ. Max. Unit 1.2 V V(BR)DSS 60 V 2 Table 5: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 30 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 30 V, ID= 9 A VGS = 0 to 10 V (see Figure 14: "Test circuit for gate charge behavior") Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 7: Source-drain diode Symbol VSD(1) Parameter Test conditions Forward on voltage ISD = 9 A, VGS = 0 V - trr Reverse recovery time - 17.1 ns Qrr Reverse recovery charge - 6.67 nC IRRM Reverse recovery current ID = 9 A, di/dt = 100 A/µs VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 0.8 A Notes: (1)Pulsed: 4/15 pulse duration = 300 µs, duty cycle 1.5%. DocID028259 Rev 3 STL36DN6F7 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028259 Rev 3 5/15 Electrical characteristics STL36DN6F7 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics 6/15 DocID028259 Rev 3 STL36DN6F7 3 Test circuits Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID028259 Rev 3 7/15 Package information 4 STL36DN6F7 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 8/15 DocID028259 Rev 3 STL36DN6F7 4.1 Package information PowerFLAT 5x6 double island type C package information Figure 19: PowerFLAT™ 5x6 double island type C package outline 8256945_DI_typeC_16 DocID028259 Rev 3 9/15 Package information STL36DN6F7 Table 8: PowerFLAT™ 5x6 double island type C mechanical data mm Dim. Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 0.50 5.20 5.40 D 5.00 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 D7 1.68 e 10/15 Typ. 4.45 1.98 1.27 E 5.95 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 E8 0.55 0.75 K 1.05 1.35 L 0.725 1.025 L1 0.05 θ 0° DocID028259 Rev 3 6.15 0.15 6.35 0.25 12° STL36DN6F7 Package information Figure 20: PowerFLAT™ 5x6 double island recommended footprint (dimensions are in mm) 8256945_DI_FP_smp_16 DocID028259 Rev 3 11/15 Package information 4.2 STL36DN6F7 Packing information Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_ Tape_rev_C Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape 12/15 DocID028259 Rev 3 STL36DN6F7 Package information Figure 23: PowerFLAT™ 5x6 reel DocID028259 Rev 3 13/15 Revision history 5 STL36DN6F7 Revision history Table 9: Document revision history Date Revision 20-Aug-2015 1 First release. 2 Document status promoted from preliminary to production data. Updated Section 2: "Electrical ratings" and Section 3: "Electrical characteristics". Added Section 3.1: "Electrical characteristics (curves)". 3 Modified title and features table on cover page. Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "On /off states" Modified Figure 4: "Output characteristics", Figure 5: "Transfer characteristics", Figure 7: "Static drain-source on-resistance" and Figure 12: "Source-drain diode forward characteristics". Minor text changes. 22-Oct-2015 10-May-2017 14/15 Changes DocID028259 Rev 3 STL36DN6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID028259 Rev 3 15/15