STS12N3LLH5

STS12N3LLH5 N-channel 30 V, 0.0068 Ω, 12 A, SO-8 STripFET™ V Power MOSFET Datasheet — production data Features Type VDSS STS12N3LLH5 30 V RDS(on) max ID ) s ( ct 5 < 0.0075 Ω 12 A (1) 8 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 1 SO-8 r P e t e l o Application ■ u d o 4 ■ Switching applications Description ) (s s b O Figure 1. Internal schematic diagram t c u This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging STS12N3LLH5 12D3L SO-8 Tape and reel June 2012 This is information on a product in full production. Doc ID 17152 Rev 3 1/13 www.st.com 13 Contents STS12N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits .............................................. 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/13 Doc ID 17152 Rev 3 STS12N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V +22/-20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 12 A ID (1) Drain current (continuous) at TC=100 °C 8.75 A IDM(2) Drain current (pulsed) 48 Total dissipation at TC = 25 °C 2.7 PTOT (2) TJ 0.02 Operating junction temperature Storage temperature Tstg e t e ol 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area Table 3. Thermal resistance )- Symbol Rthj-pcb (1) s b O Parameter t(s Thermal resistance junction-ambient c u d A ct du Derating factor o r P (s) W W/°C -55 to 150 °C Value Unit 47 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec e t e ol o r P s b O Doc ID 17152 Rev 3 3/13 Electrical characteristics 2 STS12N3LLH5 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS =max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = +22/-20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS= 10 V, ID= 6 A VGS= 4.5 V, ID= 6 A V(BR)DSS Table 5. O 4/13 Parameter Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge e t e ol e t e ol Dynamic Symbol bs Test conditions )- s ( t c du o r P Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time s b O Test conditions Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA ) s ( ct du 1 V o r P 0.0068 0.0075 0.0084 0.0092 Min. Typ. VDS = 25 V, f=1 MHz, VGS=0 - 1290 240 32 pF pF pF VDD=15 V, ID = 12 A VGS= 4.5 V Figure 14 - 8 3.6 3.4 nC nC nC Test conditions VDD=15 V, ID= 6 A, RG=4.7 Ω, VGS =10 V Figure 13 Doc ID 17152 Rev 3 Min. Typ. - 8.6 11.2 32.4 6 Max. Ω Ω Unit Max. Unit - ns ns ns ns STS12N3LLH5 Electrical characteristics Table 7. Source drain diode Symbol Test conditions Min Typ. Max Unit Source-drain current - 12 A (1) Source-drain current (pulsed) - 48 A (2) Forward on voltage ISD = 12 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD= 25 V, Tj=150 °C - ISD ISDM VSD Parameter trr Qrr IRRM 22 15 1.4 1. Pulse width limited by safe operating area ns nC A ) s ( ct 2. Pulsed: pulse duration=300µs, duty cycle 1.5% u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 17152 Rev 3 5/13 Electrical characteristics STS12N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance !-V )$ ! IS EA N AR IS $3O TH IN AX2 ION YM AT ER DB /P ITE ,IM  4J # 4C # 3INGLE PULSE MS  MS S ) s ( ct    Figure 4.   Output characteristics Figure 5. !-V )$ ! 6'36  6   6  )-  s ( t c   u d o  r P e       t e l o Figure 6. s b O r P e Transfer characteristics t e l o )$ ! !-V 6'36  s b O 6     6    6$36 Normalized BVDSS vs temperature !-V "6$33 NORM u d o 6$36 Figure 7.      6$36 Static drain-source on-resistance !-V 2$3ON /HM  6'36              6/13     4* #   Doc ID 17152 Rev 3    )$! STS12N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6  6$$6 !-V # P&  )$!  Capacitance variations  #ISS           #OSS ) s ( ct           1GN# Figure 10. Normalized gate threshold voltage vs temperature   u d o 6$36 Figure 11. Normalized on-resistance vs temperature !-V 6'3TH #RSS 2$3ON NORM NORM r P e !-V t e l o    s b O  ) (s  t c u    d o r  P e  4* #   t e l o         4* # Figure 12. Source-drain diode forward characteristics s b O 63$ 6 !-V 4*  #   4* #   4* #           )3$! Doc ID 17152 Rev 3 7/13 Test circuits 3 STS12N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. ) s ( t VG 2.7kΩ c u d PW 47kΩ 1kΩ PW D.U.T. AM01468v1 e t e ol o r P AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B A D G S s ( t c 3.3 μF B 25 Ω D 1000 μF RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 Figure 17. Unclamped inductive waveform b O L VD VDD u d o G so )- L=100μH s b O AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 17152 Rev 3 10% AM01473v1 STS12N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 17152 Rev 3 9/13 Package mechanical data Table 8. STS12N3LLH5 SO-8 mechanical data mm Dim. Min. Typ. Max. A 1.75 A1 0.10 0.25 A2 1.25 b 0.28 0.48 c 0.17 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 e 1.27 h 0.25 L 0.40 ete l o s L1 du 4.00 o r P 0.50 1.27 1.04 k 0° ccc ) (s b O t c u d o r P e t e l o s b O 10/13 ) s ( ct Doc ID 17152 Rev 3 8° 0.10 STS12N3LLH5 Package mechanical data Figure 19. SO-8 drawing ) s ( ct u d o r P e t e l o )- s b O 0016023_Rev_E s ( t c u d o r P e t e l o s b O Doc ID 17152 Rev 3 11/13 Revision history 5 STS12N3LLH5 Revision history Table 9. Document revision history Date Revision Changes 19-Feb-2010 1 First release. 01-Jul-2011 2 Datasheet status promoted from preliminary data to datasheet. Modified: Table 2 and 4. 07-Jun-2012 3 Updated mechanical data. Minor text changes. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 12/13 Doc ID 17152 Rev 3 STS12N3LLH5 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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