STS5P3LLH6

STS5P3LLH6 Datasheet P-channel 30 V, 48 mΩ typ., 5 A, STripFET H6 Power MOSFET in an SO-8 package Features 5 8 4 • • • • 1 SO-8 Order code VDS RDS(on) max. ID STS5P3LLH6 30 V 56 mΩ 5A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications • Switching applications G(4) Description S(1, 2, 3) AM01475v4 This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS5P3LLH6 Product summary Order code STS5P3LLH6 Marking 5K3L Package SO-8 Packing Tape and reel DS9648 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STS5P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tamb = 25 °C 5 Drain current (continuous) at Tamb = 100 °C 3.2 IDM (1) Drain current (pulsed) 20 A PTOT Total power dissipation at Tamb = 25 °C 2.7 W Tstg Storage temperature range -55 to 150 °C 150 °C Value Unit 47 °C/W ID TJ Operating junction temperature A 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJA (1) Parameter Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. Note: DS9648 - Rev 3 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. page 2/13 STS5P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 250 µA Typ. 30 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 0 V, VDS = 30 V, TC = 125 Unit V VGS = 0 V, VDS = 30 V IDSS Max. 1 °C(1) 10 1.0 µA 100 nA 2.5 V VGS = 10 V, ID = 2.5 A 48 56 VGS = 4.5 V, ID = 2.5 A 75 90 Min. Typ. Max. Unit - 639 - pF - 79 - pF - 52 - pF - 6 - nC - 1.9 - nC - 2.1 - nC Min. Typ. Max. Unit - 5.4 - ns mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 15 V, ID = 5 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Test conditions VDD = 15 V, ID = 5 A, Rise time RG = 4.7 Ω, VGS = 10 V - 5 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 19.2 - ns - 3.4 - ns Min. Typ. Max. Unit 1.1 V Fall time Table 6. Source drain diode Symbol VSD (1) Parameter Test conditions Forward on voltage ISD = 5 A, VGS = 0 V - trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs, - 11.2 ns Qrr Reverse recovery charge VDD = 16 V, TJ = 150 °C - 3.5 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 0.6 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DS9648 - Rev 3 page 3/13 STS5P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) GIPG031220141555ALS Figure 2. Thermal impedance GIPG031220141537ALS K δ = 0.5 S( on ) 100µs 10-1 1ms δ = 0.1 δ = 0.05 δ = 0.02 Zth = k Rthj-amb δ = tp / Ƭ is 10 O p lim era ite tion d by in t m his ax a R rea D δ = 0.2 10ms 1 10-2 δ = 0.01 SINGLE PULSE Tj=150°C Tamb=25°C Single pulse 0.1 0.1 10 1 VDS(V) 10-3 10-5 GIPG170920140950FSR VGS=10V 10-3 10-2 ID (A) 30 VGS=6V 30 20 VGS=5V 20 VGS=4V 0 0 4 6 VDS(V) Figure 5. Gate charge vs gate-source voltage VGS (V) GIPG170920141552FSR 12 10 tp(s) 10 VGS=3V 2 100 VDS= 7V VGS=7V 10 10-1 GIPG170920141543FSR 40 40 Ƭ Figure 4. Transfer characteristics Figure 3. Output characteristics ID (A) 10-4 tp 0 2 4 6 8 10 VGS(V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) GIPG170920141558FSR VGS=10V 55 VDD = 15 V ID = 5 A 50 8 6 45 4 40 2 0 0 DS9648 - Rev 3 5 10 15 Qg(nC) 35 0 1 2 3 4 5 ID(A) page 4/13 STS5P3LLH6 Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature V(BR)DSS Figure 8. Capacitance variations ID=250µA 1.08 GIPD071020141032FSR C (pF) 800 GIPG290820141412MT (norm) 1.06 Ciss 600 1.04 1.02 400 1.00 0.98 200 0.96 0.94 0.92 -75 -25 25 175 TJ(°C) 125 75 0 0 GIPG290820141351MT (norm) 20 Figure 10. Normalized on-resistance vs temperature Figure 9. Normalized gate threshold voltage vs temperature VGS(th) 10 GIPG290820141400MT RDS(on) (norm) ID=250µA 1.1 Coss Crss VDS(V) VGS=10V 1.6 1.0 1.4 0.9 1.2 0.8 1.0 0.7 0.6 0.8 0.5 0.6 0.4 -75 -25 25 75 125 0.4 -75 175 TJ(°C) -25 25 75 125 175 TJ(°C) Figure 11. Source-drain diode forward characteristics GIPD081020141131FSR VSD (V) Tj= -50°C 0.9 Tj= 25°C 0.8 0.7 Tj= 150°C 0.6 0.5 Note: DS9648 - Rev 3 0 1 2 3 4 5 ISD(A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 5/13 STS5P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9648 - Rev 3 page 6/13 STS5P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SO-8 package information Figure 15. SO-8 package outline 0016023_So-807_fig2_Rev10 DS9648 - Rev 3 page 7/13 STS5P3LLH6 SO-8 package information Table 7. SO-8 mechanical data Dim. mm Min. Typ. Max. A 1.75 A1 0.10 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0° 8° ccc 0.10 Figure 16. SO-8 recommended footprint (dimensions are in mm) 0016023_So-807_footprint_Rev10 DS9648 - Rev 3 page 8/13 STS5P3LLH6 SO-8 packing information 4.2 SO-8 packing information Figure 17. SO-8 tape and reel dimensions D A N T Po Bo Ko Ao P 0016023_SO-8_O7_T_R Figure 18. Tape orientation DS9648 - Rev 3 page 9/13 STS5P3LLH6 SO-8 packing information Table 8. SO-8 tape and reel mechanical data Dim. mm Min. Typ. A 330 C 12.8 D 20.2 N 60 T DS9648 - Rev 3 Max. 13.2 - 22.4 Ao 6.5 6.7 Bo 5.4 5.6 Ko 2.0 2.2 Po 3.9 4.1 P 7.9 8.1 page 10/13 STS5P3LLH6 Revision history Table 9. Document revision history Date Version 09-May-2013 1 Changes First revision. Text edits throughout document On cover page: – changed title description – updated Features – updated Description 11-Dec-2014 2 In Table 4, changed RDS(on) values In Table 5, changed values and test conditions In Table 6, changed values and test conditions In Table 7, changed values and test conditions Added Section 2.1: Electrical characteristics (curves) Updated Section 3: Test circuits Updated Section 4: Package mechanical data Updated Internal schematic. 17-Feb-2021 3 Updated Section 4.2 SO-8 packing information. Minor text changes. DS9648 - Rev 3 page 11/13 STS5P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS9648 - Rev 3 page 12/13 STS5P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9648 - Rev 3 page 13/13