STS6P3LLH6

STS6P3LLH6 Datasheet P-channel 30 V, 24 mΩ typ., 6 A, STripFET H6 Power MOSFET in an SO-8 package Features 5 8 4 • • • • 1 SO-8 Order code VDS RDS(on) max. ID STS6P3LLH6 30 V 30 mΩ 6A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications • Switching applications G(4) Description S(1, 2, 3) AM01475v4 This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS6P3LLH6 Product summary Order code STS6P3LLH6 Marking 6K3L Package SO-8 Packing Tape and reel DS9470 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STS6P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tamb = 25 °C 6 Drain current (continuous) at Tamb = 100 °C 4 IDM (1) Drain current (pulsed) 24 A PTOT Total power dissipation at Tamb = 25 °C 2.7 W Tstg Storage temperature range -55 to 150 °C 150 °C Value Unit 47 °C/W ID TJ Operating junction temperature A 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJA (1) Parameter Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. Note: DS9470 - Rev 3 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. page 2/14 STS6P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 250 µA Typ. 30 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 0 V, VDS = 30 V, TC = 125 Unit V VGS = 0 V, VDS = 30 V IDSS Max. 1 °C(1) 10 ±100 1 µA nA V VGS = 10 V, ID = 3 A 24 30 VGS = 4.5 V, ID = 3 A 38 50 Min. Typ. Max. Unit - 1450 - pF - 178 - pF - 120 - pF - 12 - nC - 4.4 - nC - 5 - nC Min. Typ. Max. Unit - 15 - ns mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 24 V, f = 1 MHz, VGS = 0 V VDD = 24 V, ID = 6 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching times Symbol td(on) tr td(off) tf DS9470 - Rev 3 Parameter Turn-on delay time Test conditions VDD = 24 V, ID = 3 A, Rise time RG = 4.7 Ω, VGS = 10 V - 15 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 24 - ns - 21 - ns Fall time page 3/14 STS6P3LLH6 Electrical characteristics Table 6. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 6 A Source-drain current (pulsed) - 24 A 1.1 V Forward on voltage ISD = 3 A, VGS = 0 V - trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs, - 15 ns Qrr Reverse recovery charge VDD = 16 V, TJ = 150 °C - 6.5 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 0.9 A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Note: DS9470 - Rev 3 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. page 4/14 STS6P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) AM17929v1 K AM17945v1 δ=0.5 10 0.05 is DS(o th in ax R n io y m at er d b Op mit e Li 10ms 100ms 1s 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 AM17931v1 ID (A) 35 amb 0.01 10 -2 Single pulse VDS(V) 10 0.02 10 -3 10 -5 Figure 3. Output characteristics 40 0.1 10 -1 is ea ar n) 1 0.5 0.2 VGS=6, 7, 8, 9, 10V 5V 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t p(s) Figure 4. Transfer characteristics AM17932v1 ID (A) VDS=2V 35 4V 30 30 25 25 20 20 15 15 3V 10 10 5 5 0 0 2 1 3 2V VDS(V) Figure 5. Gate charge vs gate-source voltage AM17933v1 VGS (V) ID=6A 12 0 0 1 2 4 3 6 5 7 VGS(V) Figure 6. Static drain-source on-resistance AM17934v1 RDS(on) (mΩ) VGS=10V 24.5 10 8 24.0 6 4 23.5 2 0 DS9470 - Rev 3 0 4 8 12 16 20 24 28 Qg(nC) 23.0 0 1 2 3 4 5 6 ID(A) page 5/14 STS6P3LLH6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations AM17935v1 C (pF) AM17936v1 VGS(th) (norm) ID=250µA 1600 1.2 1400 Ciss 1200 1000 800 600 400 200 0 Coss Crss 0 5 10 15 20 25 VDS(V) -75 25 50 75 100 125 150 J(°C) Figure 10. Normalized VDS vs temperature Figure 9. Normalized on-resistance vs temperature AM17937v1 RDS(on) -25 AM17938v1 VDS (norm) (norm) ID=3A ID=1mA 1.08 1.2 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) TJ(°C) Figure 11. Source-drain diode forward characteristics AM17939v1 VSD (V) TJ=-55°C TJ 0.7 TJ=175°C 0.6 0.5 0.4 0 Note: DS9470 - Rev 3 2 4 6 ISD(A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 6/14 STS6P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9470 - Rev 3 page 7/14 STS6P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SO-8 package information Figure 15. SO-8 package outline 0016023_So-807_fig2_Rev10 DS9470 - Rev 3 page 8/14 STS6P3LLH6 SO-8 package information Table 7. SO-8 mechanical data Dim. mm Min. Typ. Max. A 1.75 A1 0.10 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0° 8° ccc 0.10 Figure 16. SO-8 recommended footprint (dimensions are in mm) 0016023_So-807_footprint_Rev10 DS9470 - Rev 3 page 9/14 STS6P3LLH6 SO-8 packing information 4.2 SO-8 packing information Figure 17. SO-8 tape and reel dimensions D A N T Po Bo Ko Ao P 0016023_SO-8_O7_T_R Figure 18. Tape orientation DS9470 - Rev 3 page 10/14 STS6P3LLH6 SO-8 packing information Table 8. SO-8 tape and reel mechanical data Dim. mm Min. Typ. A 330 C 12.8 D 20.2 N 60 T DS9470 - Rev 3 Max. 13.2 - 22.4 Ao 6.5 6.7 Bo 5.4 5.6 Ko 2.0 2.2 Po 3.9 4.1 P 7.9 8.1 page 11/14 STS6P3LLH6 Revision history Table 9. Document revision history Date Version 01-Feb-2013 1 Changes First revision. – Modified: RDS(on) value in cover page – Modified: VGS value in Table 2 28-Nov-2013 2 – Modified: IGSS test conditions value in Table 4 – Modified: Qg typical value in Table 5 – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes. Updated title and Internal schematic in cover page. 17-Feb-2021 3 Updated Section 4.2 SO-8 packing information. Minor text changes. DS9470 - Rev 3 page 12/14 STS6P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS9470 - Rev 3 page 13/14 STS6P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9470 - Rev 3 page 14/14