STS20N3LLH6
N-channel 30 V, 0.004 Ω, 20 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STS20N3LLH6
30 V
0.0047 Ω
20 A
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
■
Very low switching gate charge
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SO-8
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Application
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Switching applications
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Description
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Figure 1.
Internal schematic diagram
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This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STS20N3LLH6
20G3L
SO-8
Tape and reel
March 2010
Doc ID 15528 Rev 2
1/13
www.st.com
13
Contents
STS20N3LLH6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuits
.............................................. 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Doc ID 15528 Rev 2
STS20N3LLH6
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
VGS(1)
Parameter
Drain-source voltage (VGS = 0)
Gate-source voltage
Value
Unit
30
V
± 20
V
ID
Drain current (continuous) at TC = 25 °C
20
A
ID
Drain current (continuous) at TC=100 °C
12.5
A
(2)
Drain current (pulsed)
80
PTOT
Total dissipation at TC = 25 °C
2.7
TJ
Operating junction temperature
Storage temperature
IDM
Tstg
Thermal resistance
Symbol
Rthj-amb (1)
W
-55 to 150
°C
Value
Unit
47
°C/W
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Parameter
)-
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1. Continuous mode
Table 3.
A
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2. Pulse width limited by safe operating area
(s)
Thermal resistance junction-ambient
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1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
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Doc ID 15528 Rev 2
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Electrical characteristics
2
STS20N3LLH6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 10 A
VGS= 4.5 V, ID= 10 A
V(BR)DSS
Table 5.
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Dynamic
Symbol
Parameter
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Test conditions
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
)
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(
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du
1
V
o
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P
0.004 0.0047
0.0059 0.0075
Min.
Typ.
VDS =25 V, f=1 MHz,
VGS=0
Ω
Ω
Max.
Unit
-
1690
290
176
-
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 20 A
VGS =4.5 V
Figure 19
-
17
8
6
-
nC
nC
nC
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
-
1.7
-
Ω
RG
)-
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4/13
Min.
Ciss
Coss
Crss
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Test conditions
Doc ID 15528 Rev 2
STS20N3LLH6
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7.
Typ.
Max.
Unit
-
9.5
30
37
12
-
ns
ns
ns
ns
Parameter
Test conditions
Min.
Typ.
Max.
Unit
20
A
80
A
1.1
V
Source-drain current
-
(1)
Source-drain current (pulsed)
-
(2)
Forward on Voltage
ISD= 20 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 20 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
Figure 15
ISDM
VSD
VDD=15 V, ID= 10 A,
RG=4.7 Ω, VGS=4.5 V
Figure 13
Min.
Source drain diode
Symbol
ISD
Test conditions
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
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14
16.8
1.4
ns
nC
A
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2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
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(s
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Doc ID 15528 Rev 2
5/13
Electrical characteristics
STS20N3LLH6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
!-V
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Figure 4.
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Output characteristics
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Pr
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Normalized BVDSS vs temperature
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!-V
Figure 6.
Transfer characteristics
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Figure 5.
!-V
6'3 6
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!-V
Figure 7.
6'36
Static drain-source on resistance
!-V?B
2$3ON
/HM
6/13
4* #
Doc ID 15528 Rev 2
)$!
STS20N3LLH6
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
!-V
6'3
6
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#
P&
6$$ 6
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Capacitance variations
#ISS
1GN#
Figure 10. Normalized gate threshold voltage
vs temperature
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Figure 11. Normalized on resistance vs
temperature
!-V
6'3TH
NORM
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(
ct
#OSS
#RSS
2$3ON
NORM
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4* #
4* #
Figure 12. Source-drain diode forward
characteristics
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!-V
63$
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#
4* #
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Doc ID 15528 Rev 2
7/13
Test circuits
3
STS20N3LLH6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
)
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VG
2.7kΩ
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PW
47kΩ
1kΩ
PW
D.U.T.
AM01468v1
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AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
A
D
G
S
s
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t
c
3.3
µF
B
25 Ω
D
1000
µF
RG
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2200
µF
3.3
µF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
Figure 17. Unclamped inductive waveform
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VD
VDD
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so
)-
L=100µH
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AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/13
0
Doc ID 15528 Rev 2
10%
AM01473v1
STS20N3LLH6
Test circuits
Figure 19. Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
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Qgd
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Package mechanical data
4
STS20N3LLH6
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Doc ID 15528 Rev 2
STS20N3LLH6
Package mechanical data
SO-8 mechanical data
mm.
DIM.
min.
typ
max.
A
1.75
A1
0.10
A2
1.25
0.25
b
0.28
0.48
c
0.17
0.23
D
4.80
4.90
E
5.80
6.00
E1
3.80
3.90
e
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5.00
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6.20
1.27
h
0.25
L
0.40
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L1
bs
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1.04
Pr
4.00
0.50
1.27
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0016023_D
Doc ID 15528 Rev 2
11/13
Revision history
5
STS20N3LLH6
Revision history
Table 8.
Document revision history
Date
Revision
Changes
23-Mar-2009
1
First release
17-Mar-2010
2
Document status promoted from preliminary data to datasheet.
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STS20N3LLH6
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
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