STS8DN3LLH5
Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STS8DN3LLH5
30 V
< 0.019 Ω
10 A (1)
1. The value is rated according Rthj-pcb
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
Very low switching gate charge
■
High avalanche ruggedness
■
Low gate drive power losses
SO-8
Application
■
Figure 1.
Switching applications
Internal schematic diagram
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STS8DN3LLH5
8DN3LL
SO-8
Tape and reel
January 2010
Doc ID 16967 Rev 1
1/12
www.st.com
12
Contents
STS8DN3LLH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
Doc ID 16967 Rev 1
STS8DN3LLH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
± 22
V
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID(1)
Drain current (continuous) at TC = 25 °C
10
A
ID (1)
Drain current (continuous) at TC=100 °C
9
A
Drain current (pulsed)
40
A
Total dissipation at TC = 25 °C
2.7
W
Derating factor
0.02
W/°C
-55 to 150
°C
Value
Unit
47
°C/W
IDM
(2)
PTOT
(2)
TJ
Operating junction temperature
Storage temperature
Tstg
1. The value is rated according Rthj-pcb
2. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Rthj-pcb
(1)
Parameter
Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
Doc ID 16967 Rev 1
3/12
Electrical characteristics
2
STS8DN3LLH5
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS =max rating @125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±22 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5 A
VGS= 4.5 V, ID= 5 A
V(BR)DSS
Table 5.
Symbol
4/12
On/off states
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
1
V
0.0155
0.020
0.019
0.022
Ω
Ω
Min.
Typ.
Max.
Unit
pF
pF
pF
nC
nC
nC
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
724
132
21
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 10 A
VGS= 4.5 V
Figure 14
-
5.4
2
2.1
RG
Intrinsic gate resistance
f=1 MHz gate dc bias=0
test signal level = 20 mV
open drain
-
Doc ID 16967 Rev 1
3.3
Ω
STS8DN3LLH5
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISD
VDD=15 V, ID= 5 A,
RG=4.7 Ω, VGS =10 V
Figure 13
Min.
Typ.
Max.
Unit
-
4
4.2
21.1
3.5
-
ns
ns
ns
ns
Min
Typ.
Max
Unit
Source drain diode
Parameter
Test conditions
Source-drain current
-
10
A
(1)
Source-drain current (pulsed)
-
40
A
(2)
Forward on voltage
ISD = 10 A, VGS=0
-
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A,
di/dt = 100 A/µs,
VDD= 25 V, Tj=150 °C
-
ISDM
VSD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
trr
Qrr
IRRM
20.8
10.5
1
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 16967 Rev 1
5/12
Electrical characteristics
STS8DN3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM04963v1
ID
(A)
a
are
Tj=150°C
Tc=25°C
is
)
s
on
thi RDS(
in
on max
i
t
era by
Op ited
Lim
100
10
Single
pulse
10ms
1
100ms
1s
0.1
0.01
0.1
Figure 4.
10
1
VDS(V)
Output characteristics
AM04954v1
ID
(A)
VGS=10V
AM04955v1
ID
(A)
VDS=4V
100
100
80
80
5V
60
60
4V
40
40
20
20
3V
0
0
Figure 6.
1
2
4
3
Normalized BVDSS vs temperature
AM04956v1
BVDSS
(norm)
0
0
VDS(V)
Figure 7.
2
4
25
1.05
20
1.00
15
0.95
10
6/12
50
100
10 VGS(V)
AM04957v1_a
RDS(on)
(Ohm)
ID=1mA
0
8
Static drain-source on resistance
1.10
0.90
-50
6
150 TJ(°C)
Doc ID 16967 Rev 1
5
0
ID=5A
VGS=10V
2
4
6
8
10
ID(A)
STS8DN3LLH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM04958v1
VGS
(V)
VDD=15V
ID=11A
12
Capacitance variations
AM04959v1
C
(pF)
TJ=25°C
f=1MHz
1000
10
800
Ciss
8
600
6
400
4
200
2
0
0
4
2
8
6
10 Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
AM04960v1
VGS(th)
(norm)
ID=250µA
1.2
0
0
Coss
Crss
20
10
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM04961v1
RDS(on)
(norm)
ID=5.5A
VGS=10V
1.8
1.1
1.6
1.0
0.9
1.4
0.8
1.2
0.7
1.0
0.6
0.8
0.5
0.4
-50
50
0
100
150 TJ(°C)
0.6
-50
0
50
100
150 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM04961v1
VSD
(V)
TJ=-50°C
0.9
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
0
2
4
6
8
10 ISD(A)
Doc ID 16967 Rev 1
7/12
Test circuits
3
STS8DN3LLH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
Doc ID 16967 Rev 1
10%
AM01473v1
STS8DN3LLH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 16967 Rev 1
9/12
Package mechanical data
STS8DN3LLH5
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
0.1
TYP.
MAX.
0.068
0.25
0.003
0.009
1.65
0.064
0.65
0.85
0.025
0.033
0.018
b
0.35
0.48
0.013
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
c1
45 (typ.)
1.27
e
e3
0.244
0.050
3.81
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
0.6
S
10/12
MIN.
1.75
a2
a3
inch
MAX.
0.050
0.023
8 (max.)
Doc ID 16967 Rev 1
0.157
STS8DN3LLH5
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
12-Jan-2010
1
Changes
First release
Doc ID 16967 Rev 1
11/12
STS8DN3LLH5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Doc ID 16967 Rev 1