STU2NK100Z

STD2NK100Z, STP2NK100Z, STU2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB IPAK 1 2 Order code 2 3 1 3 DPAK VDS STP2NK100Z 2 • • • • • 3 D(2, TAB) G(1) Package DPAK 1000 V STU2NK100Z 1 ID STD2NK100Z TAB TO-220 RDS(on) max. 8.5 Ω 1.85 A TO-220 IPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications • S(3) Product status link AM01475V1 Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. STD2NK100Z STP2NK100Z STU2NK100Z DS5280 - Rev 3 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1000 V VGS Gate-source voltage ±30 V Drain current (continuous) at TC = 25 °C 1.85 A Drain current (continuous) at TC = 100 °C 1.16 A Drain current (pulsed) 7.4 A PTOT Total dissipation at TC = 25 °C 70 W ESD Gate-source human body model (C = 100 pF, R =1.5 kΩ) 3 kV 2.5 V/ns -55 to 150 °C ID ID IDM (1) dv/dt (2) Tj Peak diode recovery voltage slope Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS. Table 2. Thermal data Parameter Symbol Rthj-case Rthj-pcb (1) Rthj-amb Value DPAK Thermal resistance junction-case Thermal resistance junction-pcb Thermal resistance junction-ambient TO-220 IPAK Unit 1.79 50 - - 62.5 100 °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 3. Avalanche characteristics Symbol IAR (1) EAS (2). Parameter Value Unit Avalanche current, repetitive or not-repetitive 1.85 A Single pulse avalanche energy 170 mJ 1. Pulse width limited by Tjmax. 2. Starting Tj = 25°C, ID = IAR, VDD = 50 V DS5280 - Rev 3 page 2/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 1000 Unit V VGS = 0 V, VDS = 1000 V 1 µA VGS = 0 V, VDS = 1000 V, TC = 125 °C (1) 50 µA ±10 µA 3.75 4.5 V 6.25 8.5 Ω Typ. Max. Unit - pF IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 0.9 A 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Ciss Coss Parameter Test conditions Min. Input capacitance Output capacitance 499 VDS = 25 V, f = 1 MHz, VGS = 0 V - 53 Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 V to 800 V - 28 - pF RG Gate input resistance f = 1 MHz, open drain - 6.6 - Ω Qg Total gate charge VDD = 800 V, ID = 1.85 A, Qgs Gate-source charge VGS = 0 to 10 V - nC Gate-drain charge (see Figure 16. Test circuit for gate charge behavior) Qgd 9 16 - 3 9 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tr DS5280 - Rev 3 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Max. Unit - ns 7.2 VDD = 500 V, ID = 0.9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Typ. - 6.5 41.5 32.5 page 3/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 1.85 ISDM (1) Source-drain current (pulsed) - 7.4 VSD (2) Forward on voltage ISD = 1.85 A, VGS = 0 V - 1.6 trr Reverse recovery time ISD = 1.85 A, di/dt = 100 A/µs - 476 ns Qrr Reverse recovery charge VDD = 60 V - 1.6 μC Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 6.9 A Reverse recovery time ISD = 1.85 A, di/dt = 100 A/µs - 532 ns Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.9 μC Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 88 A IRRM trr Qrr IRRM A V 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 A Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS5280 - Rev 3 page 4/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for IPAK, DPAK Figure 2. Thermal impedance for IPAK, DPAK K GC20540_ZTH δ=0.5 δ=0.2 0.1 10 0.05 -1 0.02 0.01 Single pulse 10 -2 10-5 10-4 10-3 10 -2 10 -1 tp(s) Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220 Figure 5. Output characterisics Figure 6. Transfer characteristics DS5280 - Rev 3 page 5/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature VDS=VGS DS5280 - Rev 3 page 6/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics Figure 14. Maximum avalanche energy vs temperature AM00056v1 E AS (mJ ) 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 DS5280 - Rev 3 ID=1.85A 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ (°C) page 7/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS5280 - Rev 3 page 8/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS5280 - Rev 3 page 9/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS5280 - Rev 3 page 10/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS5280 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type E package information 4.2 DPAK (TO-252) type E package information Figure 22. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS5280 - Rev 3 page 12/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS5280 - Rev 3 page 13/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS5280 - Rev 3 page 14/23 STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) packing information Figure 25. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS5280 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 15/23 STD2NK100Z, STP2NK100Z, STU2NK100Z TO-220 type A package information 4.4 TO-220 type A package information Figure 26. TO-220 type A package outline 0015988_typeA_Rev_21 DS5280 - Rev 3 page 16/23 STD2NK100Z, STP2NK100Z, STU2NK100Z TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS5280 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 17/23 STD2NK100Z, STP2NK100Z, STU2NK100Z IPAK (TO-251) type A package information 4.5 IPAK (TO-251) type A package information Figure 27. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS5280 - Rev 3 page 18/23 STD2NK100Z, STP2NK100Z, STU2NK100Z IPAK (TO-251) type A package information Table 13. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS5280 - Rev 3 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 19/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Ordering information 5 Ordering information Table 14. Order codes Order code Marking STD2NK100Z STP2NK100Z STU2NK100Z DS5280 - Rev 3 2NK100Z Package Packing DPAK Tape and reel TO-220 IPAK Tube page 20/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Revision history Table 15. Document revision history Date Version 24-Oct-2007 1 18-Jun-2008 2 Changes First release – Inserted new package, mechanical data IPAK – Document status promoted from preliminary data to datasheet. Removed maturity status indication from cover page. The document status is production data. 28-Jun-2018 3 Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Minor text changes. DS5280 - Rev 3 page 21/23 STD2NK100Z, STP2NK100Z, STU2NK100Z Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 DS5280 - Rev 3 page 22/23 STD2NK100Z, STP2NK100Z, STU2NK100Z IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5280 - Rev 3 page 23/23