STW34N65M5

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 2 3 1 3 12 D2PAK VDS @ TJmax RDS(on) max ID 710 V 0.11 Ω 28 A STB34N65M5 I2PAK STI34N65M5 STP34N65M5 TAB STW34N65M5 3 1 2 2 3 1 TO-220 • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance TO-247 • 100% avalanche tested Figure 1. Internal schematic diagram Applications $ • Switching applications Description ' 3 !-V These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging D2PAK Tape and reel STB34N65M5 I2PAK STI34N65M5 34N65M5 STP34N65M5 TO-220 STW34N65M5 TO-247 October 2013 This is information on a product in full production. DocID022853 Rev 3 Tube 1/22 www.st.com Contents STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 .............................................. 9 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 28 A ID Drain current (continuous) at TC = 100 °C 17.7 A IDM (1) Drain current (pulsed) 112 A PTOT Total dissipation at TC = 25 °C 190 W dv/dt (1) Peak diode recovery voltage slope 15 V/ns dv/dt (2) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C 150 °C Tstg Tj Storage temperature Max. operating junction temperature 1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V. 2. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter D2PAK TO-220, I2PAK Rthj-case Thermal resistance junction-case max max(1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient max Unit TO-247 0.66 °C/W 30 °C/W 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50) DocID022853 Rev 3 Value Unit 7 A 510 mJ 3/22 22 Electrical characteristics 2 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.09 0.11 Ω Min. Typ. Max. Unit - 2700 - pF - 75 - pF - 6.3 - pF - 220 - pF - 63 - pF f = 1 MHz open drain - 1.95 - Ω VDD = 520 V, ID = 14 A, VGS = 10 V (see Figure 18) - 62.5 - nC - 17 - nC - 28 - nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 3 VGS = 10 V, ID = 14 A Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter td (v) Voltage delay time tr (v) Voltage rise time tf (i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Crossing time Min. Typ. Max. Unit - 59 - ns - 8.7 - ns - 7.5 - ns - 12 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 28 A ISDM (1) Source-drain current (pulsed) - 112 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 28 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 28 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) ISD = 28 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 350 ns - 5.6 µC - 32 A - 422 ns - 7.4 µC - 35 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022853 Rev 3 5/22 22 Electrical characteristics 2.1 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance for D2PAK, I2PAK and TO-220 and TO-220 AM15311v1 n) D S( o O p Li era m ite tion d by in t m his ax a R rea 100 is ID (A) 10 10µs 100µs 1ms Tj=150°C Tc=25°C 1 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 AM15318v1 ID (A) 100 is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L 10µs s hi 10 100µs 1ms Tj=150°C Tc=25°C 1 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM15319v1 ID (A) 80 VGS= 9 V VGS= 8 V 70 VDS= 25 V 70 60 60 50 50 40 40 VGS= 7 V 30 30 20 20 10 10 VGS= 6 V 0 0 6/22 AM15320v1 ID (A) 80 5 10 15 20 25 VDS(V) DocID022853 Rev 3 0 3 4 5 6 7 8 9 VGS(V) STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 8. Gate charge vs gate-source voltage AM15321v1 VGS (V) 12 VDS (V) 500 VDD=520 V ID=14 A VDS 10 400 300 6 AM15322v1 RDS(on) (Ω) 0.096 0.096 VGS=10V 0.094 0.09 0.088 200 4 100 2 0 Figure 9. Static drain-source on-resistance 0.092 8 0 Electrical characteristics 0.086 0.084 0.082 20 30 40 50 60 70 0 80 Qg(nC) Figure 10. Capacitance variations 10 5 15 20 25 ID(A) Figure 11. Output capacitance stored energy AM15323v1 C (pF) 0.08 0 AM15324v1 Eoss (µJ) 12 1000 10 Ciss 1000 8 6 100 Coss 4 10 Crss 1 0.1 1 10 100 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 2 VDS = VGS ID = 250 µA 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM05460v1 RDS(on) (norm) 2.1 VGS = 10 V ID = 14 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID022853 Rev 3 0 25 50 75 100 TJ(°C) 7/22 22 Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 14. Source-drain diode forward characteristics AM05461v1 VSD (V) Figure 15. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) AM15325v1 E (μJ) 500 Eon VDD=400 V VGS=10 V ID=18 A 400 300 200 Eoff 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/22 DocID022853 Rev 3 0 25 50 75 100 TJ(°C) STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform Inductive Load Turn - off V(BR)DSS Id VD 90%Vds 90%Id td(v) IDM Vgs 90%Vgs on ID )) Vgs(I(t)) VDD VDD 10%Id 10%Vds Vds tr(v) AM01472v1 DocID022853 Rev 3 tf(i) tc(off) AM05540v1 9/22 22 Package mechanical data 4 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID022853 Rev 3 11/22 22 Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/22 DocID022853 Rev 3 Footprint STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID022853 Rev 3 13/22 22 Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H 14/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID022853 Rev 3 15/22 22 Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 26. TO-220 type A drawing ?TYPE!?2EV?4 16/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID022853 Rev 3 5.70 17/22 22 Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 27. TO-247 drawing 0075325_G 18/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 5 Packaging mechanical data Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID022853 Rev 3 Min. Max. 330 13.2 26.4 30.4 19/22 22 Packaging mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID022853 Rev 3 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 6 Revision history Revision history Table 14. Document revision history Date Revision 23-Feb-2012 1 First release. 2 – Added package, mechanical data: I²PAKFP – Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data. – Minor text changes. – Curves inserted 3 – The part numbers STF34N65M5 and STFI34N65M5 have been moved to the separate datasheet – Modified: Figure 1 – Added: MOSFET dv/dt ruggedness parameter in Table 2 – Updated: Section 4: Package mechanical data and Section 5: Packaging mechanical data – Minor text changes 15-Oct-2012 02-Oct-2013 Changes DocID022853 Rev 3 21/22 22 STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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