STW45N65M5

STFW45N65M5, STW45N65M5, STWA45N65M5 N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 1 STW45N65M5 710 V 0.078 Ω 35 A STWA45N65M5 3 3 2 2 1 1 TO-247 TO-247 long leads TO-3PF • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications ' Description * 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package STFW45N65M5 STW45N65M5 STWA45N65M5 May 2014 This is information on a product in full production. Packaging TO-3PF 45N65M5 TO-247 Tube TO-247 long leads DocID024049 Rev 2 1/18 www.st.com Contents STFW45N65M5, STW45N65M5, STWA45N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/18 .............................................. 9 4.1 TO-3PF, STFW45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-247, STW45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-247 long leads, STWA45N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID024049 Rev 2 STFW45N65M5, STW45N65M5, STWA45N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-3PF VGS Unit TO-247 long leads ± 25 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 22 A Drain current (pulsed) 140 A IDM (1) PTOT dv/dt (2) dv/dt (3) Total dissipation at TC = 25 °C 57 210 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; Tc=25°C) Tstg Storage temperature Tj 1. Gate-source voltage TO-247, 3500 Max. operating junction temperature V - 55 to 150 °C 150 °C Limited by maximum junction temperature 2. ISD ≤ 35 A, di/dt ≤ 400 A/μs, VDS(Peak) < V(BR)DSS, VDD = 400 V 3. VDS < 520 V Table 3. Thermal data Value Symbol Parameter TO-3PF TO-247, TO-247 long leads Unit Rthj-case Thermal resistance junction-case max 2.2 0.6 °C/W Rthj-amb Thermal resistance junction-ambient max 50 50 °C/W Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50) DocID024049 Rev 2 Value Unit 9 A 810 mJ 3/18 18 Electrical characteristics 2 STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. V 1 μA 100 μA ± 100 nA 4 5 V 0.067 0.078 Ω Min. Typ. Max. Unit - 3470 - pF - 82 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit 650 VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 3 VGS = 10 V, ID = 17.5 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 7 - pF Co(tr)(1) Equivalent capacitance time related - 280 - pF Co(er)(2) Equivalent capacitance energy related - 79 - pF f = 1 MHz open drain - 2 - Ω VDD = 520 V, ID = 17.5 A, VGS = 10 V (see Figure 18) - 82 - nC - 18.5 - nC - 35 - nC VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/18 DocID024049 Rev 2 STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical characteristics Table 7. Switching times Symbol td (v) Parameter Voltage delay time tr (v) Voltage rise time tf (i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Crossing time Min. Typ. Max Unit - 79.5 - ns - 11 - ns - 9.3 - ns - 16 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 35 A ISDM (1) Source-drain current (pulsed) - 140 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 35 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 35 A, di/dt = 100 A/μs VDD = 100 V (see Figure 19) ISD = 35 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 19) - 392 ns - 7.4 μC - 38 A - 468 ns - 9.7 μC - 42 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID024049 Rev 2 5/18 18 Electrical characteristics 2.1 STFW45N65M5, STW45N65M5, STWA45N65M5 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF *,3*6$ ,' $ Figure 3. Thermal impedance for TO-3PF K GIPG040420141142SA δ=0.5 7M ƒ& 7F ƒ& 6LQJOHĆSXOVH  LV DĆ 0.1 10 -1 H DU RQ LVĆ '6 WK LĆ QĆ D[Ć5 LRQ \ĆP DW HU GĆE 2S PLWH /L  0.2 0.05 —V —V  PV 0.02 c 0.01 10 -2 PV Single pulse       10 -3 10 -5 9'69 Figure 4. Safe operating area for TO-247 and TO-247LL 10 -4 10 -3 10 -2 10 -1 10 0 10 1 tp(s) Figure 5. Thermal impedance for TO-247 and TO-247LL AM13079v1 ID (A) Tj=150°C Tc=25°C Single pulse ) on D S( pe ra ite tio d ni by n m this ax a R rea is 100 1ms Li O m 10 10µs 100µs 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM13080v1 ID (A) 90 8V 80 7V 60 70 60 50 50 40 40 30 30 20 20 6V 10 0 0 VDS=25V 90 80 70 6/18 AM13081v1 ID (A) VGS= 9, 10V 10 5 10 15 20 VDS(V) DocID024049 Rev 2 0 3 4 5 6 7 8 9 VGS(V) STFW45N65M5, STW45N65M5, STWA45N65M5 Figure 8. Gate charge vs gate-source voltage AM13082v1 VDS VGS (V) VDS VDD=520V ID=17.5A 12 10 Electrical characteristics Figure 9. Static drain-source on-resistance (V) RDS(on) (Ω) 500 0.071 400 0.069 300 0.067 200 0.065 100 0.063 AM13083v1 VGS=10V 8 6 4 2 0 0 40 20 60 80 100 0 Qg(nC) Figure 10. Capacitance variations 15 10 5 20 25 ID(A) Figure 11. Output capacitance stored energy AM13084v1 C (pF) 0.061 0 AM13085v1 Eoss (µJ) 16 10000 14 Ciss 1000 12 10 8 100 Coss 4 10 1 0.1 6 Crss 1 100 10 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs. temperature AM05459v2 VGS(th) (norm) 1.10 2 ID=250µA 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs. temperature AM05460v2 RDS(on) (norm) 2.1 VGS=10V ID=17.5V 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID024049 Rev 2 0 25 50 75 100 TJ(°C) 7/18 18 Electrical characteristics STFW45N65M5, STW45N65M5, STWA45N65M5 Figure 14. Drain-source diode forward characteristics AM05461v1 VSD (V) Figure 15. Normalized V(BR)DSS vs. temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs. gate resistance (1) E (μJ) 600 AM13086v1 Eon ID=23A VDD=400V VGS=10V 500 400 Eoff 300 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/18 DocID024049 Rev 2 0 25 50 75 100 TJ(°C) STFW45N65M5, STW45N65M5, STWA45N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform V(BR)DSS Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 DocID024049 Rev 2 Tfall Tcross --over AM05540v2 9/18 18 Package mechanical data 4 STFW45N65M5, STW45N65M5, STWA45N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 DocID024049 Rev 2 STFW45N65M5, STW45N65M5, STWA45N65M5 4.1 Package mechanical data TO-3PF, STFW45N65M5 Figure 23. TO-3PF drawing 7627132_D DocID024049 Rev 2 11/18 18 Package mechanical data STFW45N65M5, STW45N65M5, STWA45N65M5 Table 9. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 12/18 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 ∅ 3.40 3.80 10 DocID024049 Rev 2 10.20 STFW45N65M5, STW45N65M5, STWA45N65M5 4.2 Package mechanical data TO-247, STW45N65M5 Figure 24. TO-247 drawing 0075325_G DocID024049 Rev 2 13/18 18 Package mechanical data STFW45N65M5, STW45N65M5, STWA45N65M5 Table 10. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/18 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024049 Rev 2 5.70 STFW45N65M5, STW45N65M5, STWA45N65M5 4.3 Package mechanical data TO-247 long leads, STWA45N65M5 Figure 25. TO-247 long leads drawing 7395426_G DocID024049 Rev 2 15/18 18 Package mechanical data STFW45N65M5, STW45N65M5, STWA45N65M5 Table 11. TO-247 long leads mechanical data mm Dim. Min. Typ. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 3.38 G 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10° V1 3° V3 20° Dia. 16/18 Max. 3.55 3.66 DocID024049 Rev 2 STFW45N65M5, STW45N65M5, STWA45N65M5 5 Revision history Revision history 2 Table 12. Document revision history Date Revision 11-Dec-2012 1 First release. 2 – – – – 09-May-2014 Changes Added: TO-3PF package Added: dv/dt (MOSFET dv/dt ruggedness) parameter and VISO Modified: Figure 6 and 7 Minor text changes DocID024049 Rev 2 17/18 18 STFW45N65M5, STW45N65M5, STWA45N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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