STW70N65DM6-4

STW70N65DM6-4 Datasheet N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET in a TO247‑4 package Features 1 2 4 3 TO247-4 Drain(1, TAB) Order code VDS RDS(on) max. ID STW70N65DM6-4 650 V 40 mΩ 68 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Excellent switching performance thanks to the extra driving source pin Applications Gate(4) • Switching applications Driver source (3) Power source (2) Description AM10177v2Z This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW70N65DM6-4 Product summary Order code STW70N65DM6-4 Marking 70N65DM6 Package TO247-4 Packing Tube DS13144 - Rev 2 - June 2020 For further information contact your local STMicroelectronics sales office. www.st.com STW70N65DM6-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 68 A ID Drain current (continuous) at TC = 100 °C 43 A Drain current (pulsed) 260 A Total power dissipation at TC = 25 °C 450 W dv/dt (2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/μs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns TSTG Storage temperature range VGS IDM (1) PTOT TJ Parameter Operating junction temperature range -55 to 150 °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 68 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 520 V. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.28 °C/W 50 °C/W Value Unit 8 A 1.8 J Table 3. Avalanche characteristics Symbol DS13144 - Rev 2 Parameter IAR Avalanche current, repetitive or not repetitive (tp limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) page 2/12 STW70N65DM6-4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 34 A VGS = 0 V, VDS = 650 V, TC = 125 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 10 °C(1) 100 μA ±5 μA 4 4.75 V 36 40 mΩ Min. Typ. Max. Unit - 4900 - - 280 - - 3 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic characteristics Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 859 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 2.3 - Qg Total gate charge - 125 - Qgs Gate-source charge - 33 - Qgd Gate-drain charge - 56 - VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 520 V, ID = 68 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) pF Ω nC 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS13144 - Rev 2 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 325 V, ID = 34 A, - TBD - ns Rise time RG = 4.7 Ω , VGS = 10 V - TBD - ns Turn-off delay time (see Figure 13. Switching times test circuit for resistive load and Figure 18. Switching time waveform) - TBD - ns - TBD - ns Fall time page 3/12 STW70N65DM6-4 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 260 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = 68 A - 17 ns (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 1.08 µC - 12.7 A Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, - 308 ns Qrr Reverse recovery charge - 4.16 µC IRRM Reverse recovery current VDD = 60 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 27 A trr ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS13144 - Rev 2 page 4/12 STW70N65DM6-4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) Zthj-c (°C/W) GADG280620190757SOA Operation in this area is limited by RDS(on) IDM 0.2 tp = 1 µs 102 tp = 10 µs GADG280620190822ZTH 0.3 duty = 0.5 0.4 10-1 V(BR)DSS 101 0.1 RDS(on) max. tp = 100 µs 10-2 0.05 100 TC = 25 °C, TJ ≤ 150 °C single pulse 10-1 10-1 100 101 single pulse tp = 1 ms VDS (V) 102 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics ID (A) ID (A) GADG060620191330OCH VGS = 9, 10 V 240 200 240 200 VGS = 8 V 160 120 VGS = 7 V 80 80 VGS = 6 V 40 0 0 2 4 6 8 10 12 40 VDS (V) Figure 5. Typical gate charge characteristics VDS (V) GADG060620191331QVGVGS VDD = 520 V, ID = 68 A 600 (V) 0 4 10 38 8 37 300 6 36 200 4 35 100 2 34 500 DS13144 - Rev 2 Qgs Qgd 30 60 90 120 150 0 Qg (nC) 6 7 RDS(on) (mΩ) 39 Qg 5 8 9 VGS (V) Figure 6. Typical drain-source on-resistance 12 0 0 VDS = 12 V 160 120 400 GADG060620191331TCH 33 0 GADG060620191329RID VGS =10 V 10 20 30 40 50 60 ID (A) page 5/12 STW70N65DM6-4 Electrical characteristics (curves) Figure 7. Typical capacitance characteristics C (pF) Figure 8. Typical output capacitance stored energy EOSS (µJ) GADG060620191330CVR GADG060620191332EOS 50 10 4 CISS 40 10 3 30 10 2 COSS f = 1 MHz 20 CRSS 10 1 10 0 10 -1 10 10 0 10 1 10 2 VDS (V) Figure 9. Normalized gate threshold vs temperature VGS(th) (norm.) GADG050620191111VTH 1.1 0 0 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs. temperature RDS(on) (norm.) GADG050620191125RON 2.5 ID = 250 µA 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 -75 100 -25 25 75 125 TJ (°C) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG060620191329VTH 0.0 -75 VGS = 10 V -25 25 TJ (°C) VSD (V) GADG060620191330SDF TJ = -50 °C 1.0 ID = 1 mA 1.05 125 Figure 12. Typical reverse diode forward characteristics 1.1 1.10 75 0.9 TJ = 25 °C 1.00 0.8 0.95 0.90 0.85 -75 DS13144 - Rev 2 TJ = 150 °C 0.7 0.6 -25 25 75 125 TJ (°C) 0.5 0 10 20 30 40 50 60 ISD (A) page 6/12 STW70N65DM6-4 Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior VDD RL RL + VD VGS 3.3 µF 2200 µF VDD IG= CONST VGS RG + pulse width D.U.T. 2200 μF PW D.U.T. 100 Ω 2.7 kΩ VG 47 kΩ GND1 (driver signal) GND2 (power) 1 kΩ GND1 AM15855v1 GND2 GADG180720181011SA Figure 15. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE Figure 16. Unclamped inductive load test circuit A L D G S L=100µH B B D 25Ω VD 3.3 µF B + 1000 µF 2200 µF 3.3 µF + VDD VDD ID G S RG D.U.T. Vi D.U.T. Pw GND2 GND1 GND1 GND2 AM15858v1 AM15857v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS13144 - Rev 2 page 7/12 STW70N65DM6-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO247-4 package information Figure 19. TO247-4 package outline 8405626_2 DS13144 - Rev 2 page 8/12 STW70N65DM6-4 TO247-4 package information Table 8. TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S DS13144 - Rev 2 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 page 9/12 STW70N65DM6-4 Revision history Table 9. Document revision history DS13144 - Rev 2 Date Version Changes 25-Oct-2019 1 First release. 29-Jun-2020 2 Modified Table 1. Absolute maximum ratings. page 10/12 STW70N65DM6-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS13144 - Rev 2 page 11/12 STW70N65DM6-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13144 - Rev 2 page 12/12