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TS4621EIJT

TS4621EIJT

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    16-WFBGA,FCBGA

  • 描述:

    IC AMP STEREO HDPH G 16FLIPCHIP

  • 数据手册
  • 价格&库存
TS4621EIJT 数据手册
TS4621E High-performance class-G stereo headphone amplifier with I2C volume control Features TS4621EIJT - flip-chip ■ Power supply range: 2.3 V to 4.8 V ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with 100 µW/channel (10 dB crest factor) ■ 0.006% typical THD+N at 1 kHz ■ 100 dB typical PSRR at 217 Hz ■ 100 dB of SNR A-weighted at G = 0 dB ■ Zero pop and click ■ I2C interface for volume control ■ Digital volume control range from -60 dB to +4 dB ■ Independent right and left channel shutdown control Pinout (top view) ■ Integrated high-efficiency buck converter ■ Low software standby current: 5 µA max ■ Output-coupling capacitors removed ■ Thermal shutdown and short-circuit protection ■ Flip-chip package: 1.65 mm x 1.65 mm, 400 µm pitch, 16 bumps Applications ■ Cellular phones, smart phones ■ Mobile internet devices ■ PMP/MP3 players VOUTR SCL SDA D INR+ CMS PVSS C2 C INL+ HPVDD C1 AGND B INL- VOUTL AVDD SW A 4 3 2 1 Balls are underneath When powered by a battery, the buck converter generates the appropriate voltage to the amplifier depending on the amplitude of the audio signal to supply the headsets. It achieves a total 2.1 mA current consumption at 100 µW output power (10 dB crest factor). THD+N is 0.02% maximum at 1 kHz and PSRR is 100 dB at 217 Hz, which ensures a high audio quality of the device in a wide range of environments. The traditionally bulky output coupling capacitors can be removed. Description The TS4621E is a class-G stereo headphone driver dedicated to high audio performance, high power efficiency and space-constrained applications. It is based on the core technology of a low power dissipation amplifier combined with a highefficiency buck converter for supplying this amplifier. September 2011 INR- A dedicated common-mode sense pin removes parasitic ground noise. The TS4621E is designed to be used with an output serial resistor. It ensures unconditional stability over a wide range of capacitive loads. The TS4621E is packaged in a tiny 16-bump flip-chip package with a pitch of 400 µm. Doc ID 022201 Rev 1 1/32 www.st.com 32 Contents TS4621E Contents 1 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 Typical application schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1 I2C bus interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1.1 I²C bus operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1.2 Control register CR2 - address 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.1.3 Control register CR1 - address 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.2 Wake-up and standby time definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.3 Common mode sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 2/32 Doc ID 022201 Rev 1 TS4621E 1 Absolute maximum ratings and operating conditions Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings Symbol VCC Vin+,VinTstg Tj Rthja Pd Parameter Supply voltage (1) during 1ms. Input voltage referred to ground Storage temperature Maximum junction temperature(2) Thermal resistance junction to ambient (3) Power dissipation Value Unit 5.5 V +/- 1.2 V -65 to +150 °C 150 °C 200 °C/W Internally limited(4) (HBM)(5) Human body model All pins VOUTR, VOUTL vs. AGND ESD 2 4 kV Machine model (MM), min. value(6) 100 V Charge device model (CDM) All pins VOUTR, VOUTL 500 750 V IEC61000-4-2 level 4, contact(7) IEC61000-4-2 level 4, air discharge(7) Latch-up +/- 8 +/- 15 kV Latch-up immunity 200 mA Lead temperature (soldering, 10 sec) 260 °C 1. All voltage values are measured with respect to the ground pin. 2. Thermal shutdown is activated when maximum junction temperature is reached. 3. The device is protected from over-temperature by a thermal shutdown mechanism, active at 150° C. 4. Exceeding the power derating curves for long periods may provoke abnormal operation. 5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating. 6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of connected pin combinations while the other pins are floating. 7. The measurement is performed on an evaluation board, with ESD protection EMIF02-AV01F3. Doc ID 022201 Rev 1 3/32 Absolute maximum ratings and operating conditions Table 2. Operating conditions Symbol VCC HPVDD SDA, SCL 4/32 TS4621E Parameter Supply voltage Buck DC output voltages High rail voltage Low rail voltage Input voltage range Value Unit 2.3 to 4.8 V 1.9 1.2 V GND to Vcc V ≥ 16 Ω RL Load resistor CL Load capacitor Serial resistor of 12 Ω minimum, RL ≥ 16 Ω 0.8 to 100 Toper Operating free air temperature range -40 to +85 °C Rthja Flip-chip thermal resistance junction to ambient 90 °C/W Doc ID 022201 Rev 1 nF TS4621E Typical application schematics Figure 1. Typical application schematics for the TS4621E Vbat L1 3.3 uH Cs 2.2 uF AVdd Sw Positive supply Cin 2.2 uF Negative left input Ct 10 uF - Level detector InL+ Positive left input + Cin 2.2 uF Cin 2.2 uF Negative right input 3 2 J1 1 Level detector Rout VoutR 12 ohms min. SDA SCL Cout 0.8 nF min. Negative supply I2C PVss I²C bus 12 ohms min. InR+ - Cin 2.2 uF Cout 0.8 nF min. Rout VoutL CMS InR- Positive right input HpVdd InL- + 2 Typical application schematics C1 Css 2.2 uF C2 AGnd C12 2.2 uF AM06119 Table 3. TS4621E pin description Pin number Pin name Pin definition A1 SW A2 AVDD Analog supply voltage, connect to battery A3 VOUTL Output signal for left audio channel A4 INL- B1 AGND B2 C1 B3 HPVDD B4 INL+ C1 C2 C2 PVSS Negative supply generator output C3 CMS Common mode sense, to be connected as close as possible to the ground of headphone/line out plug C4 INR+ Positive input signal for right audio channel D1 SDA I²C data signal, up to VCC tolerant input D2 SCL I²C clock signal, up to VCC tolerant input D3 VOUTR D4 INR- Switching node of the buck converter Negative input signal for left audio channel Device ground Flying capacitor terminal for internal negative supply generator Buck converter output, power supply for amplifier Positive input signal for left audio channel Flying capacitor terminal for internal negative supply generator Output signal for right audio channel Negative input signal for right audio channel Doc ID 022201 Rev 1 5/32 Typical application schematics Table 4. TS4621E component description Component Value Description 2.2 µF Decoupling capacitors for VCC. A 2.2 µF capacitor is sufficient for proper decoupling of the TS4621E. An X5R dielectric and 10 V rating voltage is recommended to minimize ΔC/ΔV when VCC = 4.8 V. Must be placed as close as possible to the TS4621E to minimize parasitic inductance and resistance. C12 2.2 µF Capacitor for internal negative power supply operation. An X5R dielectric and 6.3 V rating voltage is recommended to minimize ΔC/ΔV when HPVDD = 1.9 V. Must be placed as close as possible to the TS4621E to minimize parasitic inductance and resistance. CSS 2.2 µF Filtering capacitor for internal negative power supply. An X5R dielectric and 6.3 V rating voltage is recommended to minimize ΔC/ΔV when HPVDD = 1.9 V. Cin 1 Cin = ----------------------2πZinFc Input coupling capacitor that forms with Zin/2 a first-order high-pass filter with a -3 dB cutoff frequency FC. For example, at maximum gain G = 4 dB, Zin = 12.5 kΩ, Cin = 2.2 µF, therefore FC = 6 Hz. Cout 0.8 to 100 nF Output capacitor of 0.8 nF minimum to 100 nF maximum. This capacitor is mandatory for operation of the TS4621E. Rout 12 Ω min. Output resistor in-series with the TS4621E output. This 12 Ω minimum resistor is mandatory for operation of the TS4621E. 3.3 µH Inductor for the buck convertor. References of inductors: FDK: MIPSZ2012D3R3 (DC resistance = 0.19 Ω, rated current = 0.8 A) Murata: LQM2MPN3R3G0 (DC resistance = 0.12 Ω, rated current = 1.2 A) 10 µF Tank capacitor for internal buck convertor. An X5R dielectric and 6.3 V rating voltage is recommended to minimize ΔC/ΔV when HPVDD = 1.9 V. ESR of the Ct capacitor must be as low as possible to obtain the best buck efficiency. Cs L1 Ct 6/32 TS4621E Doc ID 022201 Rev 1 TS4621E Electrical characteristics 3 Electrical characteristics Table 5. Electrical characteristics of the I²C interface for VCC = +3.6 V, AGND = 0 V, Tamb = 25°C (unless otherwise specified) Symbol Parameter VIL Low level input voltage on SDA, SCL pins VIH High level input voltage on SDA, SCL pins VOL Low level output voltage, SDA pin, Isink = 3mA Iin Table 6. Is ISTBY Typ. Max. Unit 0.6 V 1.2 Input current on SDA, SCL V 0.4 V V SDA, SCL --------------------------------600kΩ 10 µA Typ. Max. Unit 1.2 1.5 mA 2.3 3.7 4.7 2.1 3.1 3.9 3.5 5 6.5 0.6 5 µA 1 Vrms +500 µV Electrical characteristics of the amplifier for VCC = +3.6 V, AGND = 0 V, RL= 32 Ω + 15 Ω, Tamb = 25° C (unless otherwise specified) Symbol ICC Min. Parameter Min. Quiescent supply current, no input signal, both channels enabled Supply current, with input modulation, both channels enabled, HPVDD = 1.2 V, output power per channel, F=1kHz Pout = 100 µW at 3 dB crest factor Pout = 500 µW at 3 dB crest factor Pout = 1 mW at 3 dB crest factor Pout = 100 µW at 10 dB crest factor Pout = 500 µW at 10 dB crest factor Pout = 1 mW at 10 dB crest factor Standby current, no input signal, I²C CR1 = 01h VSDA = 0 V, VSCL = 0 V Vin Input differential voltage range(1) Voo Output offset voltage No input signal Vout Maximum output voltage, in-phase signals RL = 16 Ω, THD+N = 1% max, f = 1 kHz RL = 47 Ω, THD+N = 1% max, f = 1 kHz RL = 10 kΩ, Rs = 15 Ω, CL = 1 nF, THD+N = 1% max, f = 1 kHz -500 THD+N Total harmonic distortion + noise, G = 0 dB Vout = 700 mVrms, F = 1 kHz Vout = 700 mVrms, 20 Hz < F < 20 kHz PSRR Power supply rejection ratio(1), Vripple = 200 mVpp, grounded inputs F = 217 Hz, G = 0 dB, RL ≥16 Ω F = 10 kHz, G = 0 dB, RL ≥16 Ω Doc ID 022201 Rev 1 0.6 1.0 1.0 0.8 1.1 1.3 0.006 0.05 90 100 70 mA Vrms 0.02 % dB 7/32 Electrical characteristics Table 6. Electrical characteristics of the amplifier for VCC = +3.6 V, AGND = 0 V, RL= 32 Ω + 15 Ω, Tamb = 25° C (unless otherwise specified) (continued) Symbol CMRR Crosstalk SNR ONoise G Mute TS4621E Parameter Min. Common mode rejection ratio F = 1 kHz, G = 0 dB, Vic = 200 mVpp F = 20 Hz to 20 kHz, G = 0 dB, Vic = 200 mVpp Channel separation RL = 32 Ω + 15 Ω , G = 0 dB, F = 1 kHz, Po = 10 mW RL = 10 kΩ, G = 0 dB, F = 1 kHz, Vout = 1 Vrms 60 80 Signal-to-noise ratio, A-weighted, Vout = 1 Vrms, THD+N < 1%, F = 1 kHz(1) G = +4 dB G = +0 dB 99 100 Output noise voltage, A-weighted (1) G = +4 dB G = +0 dB Gain range with gain (dB) = 20 x log[(VoutL/R)/(InL/R+ - InL/R-)] Typ. Max. Unit 65 45 dB 100 110 dB dB 9 -60 InL/R+ - InL/R- = 1 Vrms 11 9 µVrms +4 dB -80 dB - Gain step size error -0.5 +0.5 stepsize - Gain error (G = +4 dB) -0.45 +0.42 dB Zin Differential input impedance 25 Input impedance during wake-up phase (referred to ground) 34 kΩ 2 kΩ Zout Output impedance when CR1 = 00h (negative supply is ON and amplifier output stages are OFF)(1) F < 40 kHz F = 6 MHz F = 36 MHz twu Wake-up time(2) 12 tstby Standby time 100 µs tatk Attack time. Setup time between low rail buck voltage and high rail buck voltage 100 µs tdcy Decay time 50 ms 1. Guaranteed by design and parameter correlation. 2. Refer to the application information in Section 4.3 on page 27. 8/32 Doc ID 022201 Rev 1 10 500 75 kΩ Ω Ω 16 ms TS4621E Electrical characteristics Table 7. Timing characteristics of the I²C interface for I²C interface signals over recommended operating conditions (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit 400 kHz fSCL Frequency, SCL td(H) Pulse duration, SCL high 0.6 µs td(L) Pulse duration, SCL low 1.3 µs tst1 Setup time, SDA to SCL 100 ns th1 Hold time, SCL to SDA 0 ns Bus free time between stop and start condition 1.3 µs tst2 Setup time, SCL to start condition 0.6 µs th2 Hold time, start condition to SCL 0.6 µs tst3 Setup time, SCL to stop condition 0.6 µs tf Figure 2. SCL and SDA timing diagram t d(H) t d(L) SCL t st1 t h1 SDA AM06113 Figure 3. Start and stop condition timing diagram SCL t st2 tf t h2 t st3 SDA Start condition Stop condition AM06114 Doc ID 022201 Rev 1 9/32 Electrical characteristics Figure 4. TS4621E Current consumption vs. power supply voltage Figure 5. Standby current consumption vs. power supply voltage Quiscent Supply Current ICC (mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 No load; No input Signal Both channels enabled Ta = 25°C 0.2 0.0 No load; No input Signal SDA=SCL = 0V Ta = 25°C 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 Power Supply Voltage Vcc (V) Figure 6. Maximum output power vs. load Figure 7. 80 80 Inputs = 0°, F = 1kHz THD+N = 1% Tamb = 25°C 70 VCC=4.8V 60 50 VCC=3.6V 40 30 20 VCC=2.3V 10 0 10 Figure 8. 120 VCC=4.8V 70 Output power (mW) 60 Output power (mW) Maximum output power vs. load VCC=3.6V 50 40 VCC=2.3V 30 20 10 100 RL Load resistance ( ) Maximum output power vs. power supply voltage RL = 16Ω, F = 1kHz BW < 30kHz, Tamb = 25°C 0 10 1k Figure 9. THD+N=10% (180°) 80 100 RL Load resistance ( ) RL = 32Ω, F = 1kHz BW < 30kHz, Tamb = 25°C Output power (mW) Output power (mW) THD+N=10% (0°) THD+N=1% (180°) 40 THD+N=1% (0°) 20 10/32 THD+N=10% (0°) THD+N=10% (180°) 60 0 2.3 1k Maximum output power vs. power supply voltage 100 80 Inputs = 180°, F = 1kHz THD+N = 1% Tamb = 25°C 2.7 3.1 3.5 3.9 4.3 Power Supply Voltage Vcc (V) 4.7 60 40 20 0 2.3 Doc ID 022201 Rev 1 THD+N=1% (180°) 2.7 THD+N=1% (0°) 3.1 3.5 3.9 4.3 Power Supply Voltage Vcc (V) 4.7 TS4621E Electrical characteristics Figure 10. Maximum output power vs. power supply voltage 1600 THD+N=10% (180°) 40 20 THD+N=1% (0°) THD+N=1% (180°) F = 1kHz BW < 30kHz, Tamb = 25°C Inputs = 0°, THD+N = 1% 1500 THD+N=10% (0°) Output Voltage (mVrms) Output power (mW) 60 RL = 47Ω, F = 1kHz BW < 30kHz, Tamb = 25°C Figure 11. Maximum output voltage vs. power supply voltage 1400 2.7 3.1 3.5 3.9 4.3 Power Supply Voltage Vcc (V) 10 KΩ 1300 60 Ω 1200 1100 1000 16 Ω 700 2.3 4.7 47 Ω 32 Ω 900 800 0 2.3 600 Ω 2.7 3.1 3.5 3.9 4.3 Power Supply Voltage Vcc (V) 4.7 Figure 12. Maximum output voltage vs. power Figure 13. Current consumption vs. total supply voltage output power 100 1600 Output Voltage (mVrms) 1500 1400 600 Ω 10 KΩ Supply Current IS (mA) F = 1kHz BW < 30kHz, Tamb = 25°C Inputs = 180°, THD+N=1% 1300 1200 1100 47 Ω 32 Ω 60 Ω 1000 16 Ω 900 Both channels enabled RL = 16Ω, F = 1KHz Ta = 25°C Crest Factor = 3dB Vcc=2.3V Vcc=3.6V 10 Vcc=4.8V 800 700 2.3 2.7 3.1 3.5 3.9 4.3 Power Supply Voltage Vcc (V) 1 0.1 4.7 Figure 14. Current consumption vs. total output power Supply Current IS (mA) Supply Current IS (mA) 100 Both channels enabled RL = 32Ω, F = 1KHz Ta = 25°C Crest Factor = 3dB Vcc=2.3V Vcc=3.6V Both channels enabled RL = 47Ω, F = 1 KHz Ta = 25°C Crest Factor = 3dB Vcc=2.3V Vcc=3.6V 10 Vcc=4.8V 1 0.1 10 Figure 15. Current consumption vs. total output power 100 10 1 Total Output Power (mW) 1 Vcc=4.8V 10 1 0.1 Total Output Power (mW) 1 10 Total Output Power (mW) Doc ID 022201 Rev 1 11/32 Electrical characteristics TS4621E Figure 16. Current consumption vs. total output power Figure 17. Power dissipation vs. total output power 100 Both channels enabled RL = 47Ω, F = 1KHz Ta = 25°C, Vcc = 3.6V R = 16 Ω Power Dissipation (mW) Supply Current IS (mA) 100 10 Crest Factor=3dB R = 32 Ω 10 R = 47 Ω Both channels enabled F = 1KHz, Ta = 25°C Crest Factor = 3dB Crest Factor=10dB 1 0.1 1 0.1 1 Total Output Power (mW) 1 10 Total Output Power (mW) Figure 18. Output impedance vs. frequency Figure 19. Differential input impedance vs. gain 80 Differential Input Impedance (K ) Input Floating Input grounded Vcc=2.3V to 4.8V HIz; Right & Left Osc level=0.5VRMS Ta = 25°C 70 60 50 40 Vcc=2.3V to 4.8V Ta = 25°C 30 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 Gain (dB) Figure 20. THD+N vs. output power Figure 21. THD+N vs. output power Vcc = 2.5V, RL = 16Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C Vcc = 2.5V, RL = 16Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz 12/32 Doc ID 022201 Rev 1 F=80Hz 0 TS4621E Electrical characteristics Figure 22. THD+N vs. output power Figure 23. THD+N vs. output power Vcc = 3.6V, RL = 16Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C Vcc = 3.6V, RL = 16Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz F=80Hz Figure 24. THD+N vs. output power Figure 25. THD+N vs. output power Vcc = 4.8V, RL = 16Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C Vcc = 4.8V, RL = 16Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=80Hz, 1kHz Figure 26. THD+N vs. output power F=80Hz, 1kHz Figure 27. THD+N vs. output power Vcc = 2.5V, RL = 32Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C Vcc = 2.5V, RL = 32Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz Doc ID 022201 Rev 1 F=80Hz 13/32 Electrical characteristics TS4621E Figure 28. THD+N vs. output power Figure 29. THD+N vs. output power Vcc = 3.6V, RL = 32Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C Vcc = 3.6V, RL = 32Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz F=80Hz Figure 30. THD+N vs. output power Figure 31. THD+N vs. output power Vcc = 4.8V, RL = 32Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C Vcc = 4.8V, RL = 32Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz Figure 32. THD+N vs. output power F=80Hz Figure 33. THD+N vs. output power Vcc = 2.5V, RL = 47Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C Vcc = 2.5V, RL = 47Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz 14/32 Doc ID 022201 Rev 1 F=80Hz TS4621E Electrical characteristics Figure 34. THD+N vs. output power Figure 35. THD+N vs. output power Vcc = 3.6V, RL = 47Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C Vcc = 3.6V, RL = 47Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz F=80Hz Figure 36. THD+N vs. output power Figure 37. THD+N vs. output power Vcc = 4.8V, RL = 47Ω G = 4dB, Inputs = 0° BW < 30kHz, Tamb = 25°C Vcc = 4.8V, RL = 47Ω G = 4dB, Inputs = 180° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz F=80Hz Figure 38. THD+N vs. frequency Figure 39. THD+N vs. frequency RL = 16Ω Vcc = 2.5V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C RL = 16Ω Vcc = 2.5V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=15mW 20 Po=15mW 20k 20 Doc ID 022201 Rev 1 20k 15/32 Electrical characteristics TS4621E Figure 40. THD+N vs. frequency Figure 41. THD+N vs. frequency RL = 16Ω Vcc = 3.6V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 16Ω Vcc = 3.6V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=15mW 20 Po=15mW 20k Figure 42. THD+N vs. frequency RL = 16Ω Vcc = 4.8V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C 20 20k Figure 43. THD+N vs. frequency RL = 16Ω Vcc = 4.8V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=15mW Po=15mW 20 20k Figure 44. THD+N vs. frequency 20 Figure 45. THD+N vs. frequency RL = 32Ω Vcc = 2.5V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 32Ω Vcc = 2.5V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW 20 16/32 20k Po=10mW 20k 20 Doc ID 022201 Rev 1 20k TS4621E Electrical characteristics Figure 46. THD+N vs. frequency Figure 47. THD+N vs. frequency RL = 32Ω Vcc = 3.6V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 32Ω Vcc = 3.6V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW Po=10mW 20 20k Figure 48. THD+N vs. frequency 20 20k Figure 49. THD+N vs. frequency RL = 32Ω Vcc = 4.8V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 32Ω Vcc = 4.8V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW Po=10mW 20 20k Figure 50. THD+N vs. frequency 20 Figure 51. THD+N vs. frequency RL = 47Ω Vcc = 2.5V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 47Ω Vcc = 2.5V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW 20 20k Po=10mW 20k 20 Doc ID 022201 Rev 1 20k 17/32 Electrical characteristics TS4621E Figure 52. THD+N vs. frequency Figure 53. THD+N vs. frequency RL = 47Ω Vcc = 3.6V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 47Ω Vcc = 3.6V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW 20 Po=10mW 20k Figure 54. THD+N vs. frequency 20 20k Figure 55. THD+N vs. frequency RL = 47Ω Vcc = 4.8V G = 0dB Inputs = 0° Bw < 20kHz Tamb = 25°C RL = 47Ω Vcc = 4.8V G = 0dB Inputs = 180° Bw < 20kHz Tamb = 25°C Po=1mW Po=1mW Po=10mW 20 Po=10mW 20k 20 20k Figure 56. THD+N vs. frequency Figure 57. THD+N vs. frequency RL = RC network + 10kΩ Vcc = 2.3V to 4.8V G = 0dB, Inputs = 0° & 180° Bw < 20kHz, Tamb = 25°C RL = RC network + 600Ω Vcc = 2.3V to 4.8V G = 0dB, Inputs = 0° & 180° Bw < 20kHz, Tamb = 25°C Vo=100mVrms Vo=100mVrms Vo=1Vrms 20 18/32 Vo=1Vrms 20k 20 Doc ID 022201 Rev 1 20k TS4621E Electrical characteristics Figure 58. THD+N vs. output voltage Figure 59. THD+N vs. output voltage RL = RC network + 600Ω Vcc = 2.3V to 4.8V, G = 4dB Inputs = 0° & 180° BW < 30kHz, Tamb = 25°C RL = RC network + 10kΩ Vcc = 2.3V to 4.8V, G = 4dB Inputs = 0° & 180° BW < 30kHz, Tamb = 25°C F=8kHz F=8kHz F=1kHz F=1kHz F=80Hz F=80Hz Figure 60. THD+N vs. input voltage, HiZ left and right Figure 61. CMRR vs. frequency 0 HiZ Left & Right Vcc = 2.3V to 4.8V Zout generator = 1kΩ BW < 30kHz, Tamb = 25°C -10 Δ -20 ≥ Ω ° -30 Line In F=8kHz Line In F=1kHz -40 Line In F=80Hz -50 -60 -70 Reference F=80Hz, 1kHz, 8kHz -80 20 Figure 62. PSRR vs. frequency 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 20 ≥ ° G=4dB G=0dB G=-6dB 1000 1000 10000 20k Figure 63. PSRR vs. frequency Ω 100 100 10000 20k 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 20 Doc ID 022201 Rev 1 ≥ Ω ° G=4dB G=0dB G=-6dB 100 1000 10000 20k 19/32 Electrical characteristics TS4621E Figure 64. PSRR vs. frequency 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 20 Figure 65. Output signal spectrum Ω ≥ ° Ω ° G=4dB G=0dB G=-6dB 100 1000 10000 20k Figure 66. Crosstalk vs. frequency Figure 67. Crosstalk vs. frequency 0 0 -10 -10 -20 -30 -40 -20 -30 Ω -40 ° -50 -50 -60 -60 -70 -70 -80 -80 -90 -90 -100 -100 -110 -110 -120 20 100 1000 10000 20k Figure 68. Crosstalk vs. frequency 0 -20 -40 Ω ° -50 -60 -70 -80 -90 -100 -110 -120 20 20/32 100 1000 ° 100 1000 10000 20k Figure 69. Crosstalk vs. frequency -10 -30 -120 20 Ω 10000 20k 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 20 Doc ID 022201 Rev 1 Ω ° 100 1000 10000 20k TS4621E Electrical characteristics Figure 70. Wake-up time Figure 71. Shutdown time I²C ACK after Shutdown command SDA 2 ms/div 1V/div VOUT 2ms/div 20mv/div VOUT 10µs/div 100mv/div Doc ID 022201 Rev 1 21/32 Application information TS4621E 4 Application information 4.1 I2C bus interface In compliance with the I²C protocol, the TS4621E uses a serial bus to control the chip’s functions with the clock (SCL) and data (SDA) wires. These two lines are bi-directional (open collector) and require an external pull-up resistor (typically 10 kΩ). The maximum clock frequency in fast mode specified by the I²C standard is 400 kHz, which the TS4621E supports. In this application, the TS4621E is always the slave device and the controlling microcontroller MCU is the master device. The slave address of the TS4621E is 1100 000x (C0h). Table 8 summarizes the pin descriptions for the I²C bus interface. Table 8. I²C bus interface pin descriptions Pin 4.1.1 Functional description SDA Serial data pin SCL Clock input pin I²C bus operation The host MCU can write to the TS4621E control register to control the TS4621E, and read from the control register to obtain a configuration from the TS4621E. The TS4621E is addressed by the byte consisting of the 7-bit slave address and the R/W bit. Table 9. First byte after the START message for addressing the device A6 A5 A4 A3 A2 A1 A0 R/W 1 1 0 0 0 0 0 X There are four control registers (Table 10) named CR1 to CR4. In read mode, all the control registers can be accessed. In write mode, only CR1, CR2 and CR3 can be addressed. Table 10. Summary of control registers Description 22/32 Register address CR1 1 CR2 volume control 2 CR3 3 CR4 identification 4 D7 D6 HP_EN_L HP_EN_R D5 D4 0 0 D3 D2 SC_L SC_R T_SH Mute_L Mute_R 0 0 0 0 0 0 0 1 0 0 0 0 Doc ID 022201 Rev 1 D1 Volume control D0 SWS 0 HiZ_L HiZ_R 0 0 TS4621E Application information Writing to the control registers To write data to the TS4621E, after the "start" message the MCU must: ● send the I²C 7-bit slave address and a low level for the R/W bit. ● send the register address to write to. ● send the data bytes (control register settings). All bytes are sent MSB first. The transfer of written data ends with a "stop" message. When transmitting several data bytes, the data can be written without having to repeat the "start" message or send the byte with the slave address. If several bytes are transmitted, they will be written repeatedly to CR1, CR2 and CR3. Figure 72. I²C write operations DATA BYTES SLAVE DEVICE ADDRESS REGISTER ADDRESS CR X CRX+1 SDA S 1 1 0 0 0 0 0 0 ACK A7 A6 A1 A0 ACK D7 D6 D1 D0 ACK D7 D6 D1 D0 ACK P Stop condition Start condition R/W Acknowledge from slave Acknowledge from slave AM06115 Reading from the control registers To read data from the TS4621E, after the "start" message the MCU must: ● send the I²C 7-bit slave address and a low level for the R/W bit. ● send the register address to write to. ● send the I²C 7-bit slave address and a high level for the R/W bit. ● receive the data (control register value). All bytes are read MSB first. The transfer of read data ends with a "stop" message. When transmitting several data bytes, the data can be read without having to repeat the "start" message or send the byte with the slave address. If several bytes are transmitted, they will be read repeatedly from CR1, CR2, CR3 and CR4. Doc ID 022201 Rev 1 23/32 Application information TS4621E Figure 73. I²C read operations DATA BYTES DEVICE ADDRESS DEVICE ADDRESS REGISTER ADDRESS CRX SDA S 1 1 0 0 0 0 0 0 ACK A7 A0 ACK Start condition S 1 1 0 0 0 0 D0 ACK D7 D0 A P Stop condition Repeat start condition R/W 1 ACK D7 0 CRX+1 R/W Not Acknowledge Acknowledge fom slave AM06116 4.1.2 Control register CR2 - address 2 Table 11. Volume control register CR2 - address 2 Volume control range: -60 dB to +4 dB D5 D4 D3 D2 D1 Gain (in dB) D5 D4 D3 D2 D1 Gain (in dB) 0 0 0 0 0 -60 dB 1 0 0 0 0 -11 dB 0 0 0 0 1 -54 dB 1 0 0 0 1 -10 dB 0 0 0 1 0 -50.5 dB 1 0 0 1 0 -9 dB 0 0 0 1 1 -47 dB 1 0 0 1 1 -8 dB 0 0 1 0 0 -43 dB 1 0 1 0 0 -7 dB 0 0 1 0 1 -39 dB 1 0 1 0 1 -6 dB 0 0 1 1 0 -35 dB 1 0 1 1 0 -5 dB 0 0 1 1 1 -31 dB 1 0 1 1 1 -4 dB 0 1 0 0 0 -27 dB 1 1 0 0 0 -3 dB 0 1 0 0 1 -25 dB 1 1 0 0 1 -2 dB 0 1 0 1 0 -23 dB 1 1 0 1 0 -1 dB 0 1 0 1 1 -21 dB 1 1 0 1 1 0 dB 0 1 1 0 0 -19 dB 1 1 1 0 0 +1 dB 0 1 1 0 1 -17 dB 1 1 1 0 1 +2 dB 0 1 1 1 0 -15 dB 1 1 1 1 0 +3 dB 0 1 1 1 1 -13 dB 1 1 1 1 1 +4 dB Mute function: bits MUTE_L and MUTE_R In the volume register, MUTE_L and MUTE_R are dedicated to enabling the mute function, independently of the channel. When MUTE_L and MUTE_R are set to VIH, the mute function is enabled on the corresponding channel and the gain is set to -80 dB. When MUTE_L and MUTE_R are set to VIL, the I²C gain level is applied to the channel. 24/32 Doc ID 022201 Rev 1 TS4621E 4.1.3 Application information Control register CR1 - address 1 Amplifier output short-circuit detection: bits SC_L and SC_R The amplifier’s outputs are protected from short-circuits that might accidentally occur during manipulation of the device. In a typical application, if a short-circuit arises on the jack plug, there will be no detection because of the serial resistor present on the amplifier output, thus the output current threshold will not be reached. To be active, the detection has to occur directly on the amplifier’s output with a signal modulation on the inputs of the TS4621E. This detection is depicted in Figure 74. Figure 74. Flowchart for short-circuit detection Counter = 0 Shortcut detection TS4621E power ON Shortcut detection Counter = counter + 1 Reset TS4621E power OFF Counter < 3 Counter = 3 Wait 40 ms Set flag SC_L or SC_R to 1 Set flag HiZ_L or HiZ_R to 1 TS4621E power ON Timeout = 40 ms Shortcut detection Shortcut detection & timeout = 0 AM06117 If a short-circuit is detected three consecutive times on one channel, a flag is raised in the I²C read register CR1. ● SC_L: equals 0 during normal operation, equals 1 when a short-circuit is detected on the left channel. ● SC_R: equals 0 during normal operation, equals 1 when a short-circuit is detected on the right channel. The corresponding channel’s output stage is then set to high impedance mode. An I²C read command allows the reading of the SC_L and SC_R flags but does not reset them. An I²C write command has to be sent to CR1 to reset the flags to 0 and restore normal operation. Doc ID 022201 Rev 1 25/32 Application information TS4621E Thermal shutdown protection: bit T_SH A thermal shutdown protection is implemented to protect the device from overheating. If the temperature rises above the thermal junction of 150°C, the device is put into standby mode and a flag is raised in the read register CR1. ● T_SH: equals 0 during normal operation, equals 1 when a thermal shutdown is detected. When the temperature decreases to safe levels, the circuit switches back to normal operation and the corresponding flag is cleared. Software shutdown: bit SWS When SWS equals 1, the device is set to I²C software shutdown. When SWS equals 0, the negative supply and buck converters are activated. Channel activation: bits HP_EN_L and HP_EN_R When HP_EN_L or HP_EN_R equals 1, the corresponding amplifier channel is enabled. 4.2 Wake-up and standby time definition The wake-up time of the TS4621E is guaranteed at 12 ms typical (refer to Chapter 3: Electrical characteristics on page 7). However, since the TS4621E is activated with an I2C bus, the wake-up start procedure is as follows. 1. The master sends a start bit. 2. The master sends the device address. 3. The slave (TS4621E) answers by an acknowledge bit. 4. The master sends the register address. 5. The slave (TS4621E) answers by an acknowledge bit. 6. The master sends the output mode configuration (CR1). 7. If the TS4621E was previously in standby mode, the wake-up starts on the falling edge of the eighth clock signal (SCL) corresponding to the CR1 byte. 8. After 12 ms (de-pop sequence time), the TS4621E outputs are operational. The standby time is guaranteed as 100 µs typical (refer to Chapter 3: Electrical characteristics on page 7). However, since the TS4621E is de-activated with an I2C bus, the standby time operates as follows. 26/32 1. The master sends a start bit. 2. The master sends the device address. 3. The slave (TS4621E) answers by an acknowledge bit. 4. The master sends the register address. 5. The slave (TS4621E) answers by an acknowledge bit. 6. The master sends the output mode configuration (CR1), which corresponds, in this case, to standby mode. 7. The standby time starts on the falling edge of the eighth clock signal (SCL) corresponding to the CR1 byte. 8. After 100 µs, the TS4621E is in standby mode. Doc ID 022201 Rev 1 TS4621E 4.3 Application information Common mode sense The TS4621E implements a common-mode sense pin to correct any voltage differences that might occur between the return of the headphone jack and the GND of the device and create parasitic noise in the headphone and/or line out. The solution to strongly reduce and practically eliminate this noise consists in connecting the headphone jack ground to the CMS pin. This pin senses the difference of potential (voltage noise) between the TS4621E ground and the headphone ground. By way of the frequency response of the common-mode sense pin, this noise is removed from the TS4621E outputs. Doc ID 022201 Rev 1 27/32 Package information 5 TS4621E Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 75. TS4621E footprint recommendation 75 µm min. 100 μm max. 400 μm 400 μm Track 150 μm min. Not soldered mask opening 400 μm 400 μm PCB pad size: Φ = 260 µm maximum Φ = 220 µm recommended Solder mask opening: Φ = 300 μm min (for 260 µm diameter pad) Pad in Cu 18 μm with Flash NiAu (2-6 μm, 0.2 μm max.) Figure 76. Pinout TOP VIEW (balls are underneath) INR - VOUTR SCL SDA D D SDA SCL VOUTR INR - INR+ CMS PVSS C2 C C C2 PVSS CMS INR+ INL+ HPVDD C1 AGND B B AGND C1 HPVDD INL+ INL - VOUTL AVDD SW A A SW AVDD VOUTL INL - 3 2 1 1 2 3 4 4 28/32 BOTTOM VIEW Doc ID 022201 Rev 1 TS4621E Package information Figure 77. Marking (top view) ■ Logo: ST E ■ Symbol for lead-free: E ■ Part number: 21 ■ X digit: Assembly code ■ Date code: YWW ■ The dot marks pin A1 21X YWW Figure 78. Flip-chip - 16 bumps 1650 μm ■ ■ 400 μm 1650 μm Die height (including bumps): 600 µm ±55 µm ■ Bump diameter: 250 µm ±40 µm ■ Bump height: 205 µm ±35 µm ■ Die height: 395 µm ±20 µm ■ Pitch: 400 µm ±40 µm ■ Coplanarity: 50 µm max 600 μm 400 μm Die size: 1.65 mm x 1.65 mm ± 30 µm Figure 79. Device orientation in tape pocket 1.5 4 1 1 A Die size Y + 70 µm A 8 Die size X + 70 µm 4 All dimensions are in mm User direction of feed Doc ID 022201 Rev 1 29/32 Ordering information 6 Ordering information Table 12. 30/32 TS4621E Order codes Order code Temperature range Package Packing Marking TS4621EIJT -40°C to +85°C Flip-chip Tape & reel 21 Doc ID 022201 Rev 1 TS4621E 7 Revision history Revision history Table 13. Document revision history Date Revision 06-Sep-2011 1 Changes Initial release. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 32/32 Doc ID 022201 Rev 1
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