找到“1,048,576-WORD”相关的规格书共4,847个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| UPD23C16080BLGY-MKH | NEC[NEC] | UPD23C16080BLGY-MKH - 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE - NEC | 获取价格 | ||
| UPD23C16080BLGX | NEC[NEC] | UPD23C16080BLGX - 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE - NEC | 获取价格 | ||
| UPD23C16080BL | NEC[NEC] | UPD23C16080BL - 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE - NEC | 获取价格 | ||
| UPD23C128040BLGY-XXX-MKH | NEC[NEC] | UPD23C128040BLGY-XXX-MKH - 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE - NEC | 获取价格 | ||
| BL24CM1A-PARC | SHANGHAI BELLING | BL24CM1A 提供 1048576 位串行电可擦除和可编程只读存储器 （EEPROM），由131072个字组成，每个字 8 位。 | 获取价格 | ||
| R1WV6416RSD-5SR | RENESAS[RenesasTechnologyCorp] | R1WV6416RSD-5SR - 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| R1WV6416RSA-7SI | RENESAS[RenesasTechnologyCorp] | R1WV6416RSA-7SI - 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| R1WV6416RBG-5SI | RENESAS[RenesasTechnologyCorp] | R1WV6416RBG-5SI - 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| R1LV3216RSD-5SR | RENESAS[RenesasTechnologyCorp] | R1LV3216RSD-5SR - 32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| R1LV3216RSA-5SR | RENESAS[RenesasTechnologyCorp] | R1LV3216RSA-5SR - 32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| TC55VBM416AFTN55 | TOSHIBA[ToshibaSemiconductor] | TC55VBM416AFTN55 - 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM - Toshiba Semiconductor | 获取价格 | ||
| HN58X2404SI | RENESAS[RenesasTechnologyCorp] | HN58X2404SI - Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) - Renesas Technology Corp | 获取价格 | ||
| UPD29F064115GZ-MJH | NEC[NEC] | UPD29F064115GZ-MJH - 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE - NEC | 获取价格 | ||
| MR27V3202D | OKI[OKIelectroniccomponets] | MR27V3202D - 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM - OKI electronic componets | 获取价格 | ||
| R1WV6416RBG-7SR | RENESAS[RenesasTechnologyCorp] | R1WV6416RBG-7SR - 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| TC55V1403J-15 | TOSHIBA[ToshibaSemiconductor] | TC55V1403J-15 - 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM - Toshiba Semiconductor | 获取价格 | ||
| MSM27C802CZ | OKI[OKIelectroniccomponets] | MSM27C802CZ - 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM - OKI electronic componets | 获取价格 | ||
| MSM27C402CZ | OKI[OKIelectroniccomponets] | MSM27C402CZ - 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM - OKI electronic componets | 获取价格 | ||
| R1WV6416RSD-7SR | RENESAS[RenesasTechnologyCorp] | R1WV6416RSD-7SR - 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) - Renesas Technology Corp | 获取价格 | ||
| CY7C1510KV18 | CYPRESS[CypressSemiconductor] | CY7C1510KV18 - 72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses - Cypress Semiconductor | 获取价格 |
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