找到“1024-Byte”相关的规格书共3,654个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| XR16V698 | EXAR[ExarCorporation] | XR16V698 - 2.25V TO 3.6V HIGH PERFORMANCE OCTAL UART WITH 32-BYTE FIFO - Exar Corporation | 获取价格 | ||
| XR16V654DIV | EXAR[ExarCorporation] | XR16V654DIV - 2.25V TO 3.6V QUAD UART WITH 64-BYTE FIFO - Exar Corporation | 获取价格 | ||
| XR16V554IV80 | EXAR[ExarCorporation] | XR16V554IV80 - 2.25V TO 3.6V QUAD UART WITH 16-BYTE FIFO - Exar Corporation | 获取价格 | ||
| XR16V554IL | EXAR[ExarCorporation] | XR16V554IL - 2.25V TO 3.6V QUAD UART WITH 16-BYTE FIFO - Exar Corporation | 获取价格 | ||
| XR16V554IJ | EXAR[ExarCorporation] | XR16V554IJ - 2.25V TO 3.6V QUAD UART WITH 16-BYTE FIFO - Exar Corporation | 获取价格 | ||
| IDT723613L20PQFI | IDT[IntegratedDeviceTechnology] | IDT723613L20PQFI - CMOS Clocked FIFO With Bus Matching and Byte Swapping 64 x 36 - Integrated Device Technology | 获取价格 | ||
| IDT723613L15PFI | IDT[IntegratedDeviceTechnology] | IDT723613L15PFI - CMOS Clocked FIFO With Bus Matching and Byte Swapping 64 x 36 - Integrated Device Technology | 获取价格 | ||
| LC322260T-70 | SANYO[SanyoSemiconDevice] | LC322260T-70 - 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write - Sanyo Semicon Device | 获取价格 | ||
| LC321667BT-80 | SANYO[SanyoSemiconDevice] | LC321667BT-80 - 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write - Sanyo Semicon Device | 获取价格 | ||
| NAND512W4A2CZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND512W4A2CZA6F - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND512W4A2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND512W4A2CN6E - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND512W4A2C | NUMONYX[NumonyxB.V] | NAND512W4A2C - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - Numonyx B.V | 获取价格 | ||
| NAND512W3A2CZA6E | STMICROELECTRONICS[STMicroelectronics] | NAND512W3A2CZA6E - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND512W3A2CN6E | NUMONYX[NumonyxB.V] | NAND512W3A2CN6E - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - Numonyx B.V | 获取价格 | ||
| NAND512R4A2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND512R4A2CN6E - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND512R4A2C | NUMONYX[NumonyxB.V] | NAND512R4A2C - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - Numonyx B.V | 获取价格 | ||
| NAND512R3A2CZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND512R3A2CZA6F - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND512R3A2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND512R3A2CN6E - 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories - STMicroelectronics | 获取价格 | ||
| NAND16GW3C4BN6F | NUMONYX[NumonyxB.V] | NAND16GW3C4BN6F - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND16GW3C4BN1E | NUMONYX[NumonyxB.V] | NAND16GW3C4BN1E - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 |
