找到“SDP520WMF”相关的规格书共2,879个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 520C112T500CJ2B | CDE[CornellDubilierElectronics] | 520C112T500CJ2B - Long-life, Inverter Grade, Aluminum Ultra-Ripple, Long-life, Inverter Grade - Cornell Dubilier Electronics | 获取价格 | ||
| 520C112T400CH2B | CDE[CornellDubilierElectronics] | 520C112T400CH2B - Long-life, Inverter Grade, Aluminum Ultra-Ripple, Long-life, Inverter Grade - Cornell Dubilier Electronics | 获取价格 | ||
| 520C102T450BJ2B | CDE[CornellDubilierElectronics] | 520C102T450BJ2B - Long-life, Inverter Grade, Aluminum Ultra-Ripple, Long-life, Inverter Grade - Cornell Dubilier Electronics | 获取价格 | ||
| XBDGRN-00-0000-000000B01 | Cree Inc. | LED Lighting Color XLamp® XB-D Green 528nm (520nm ~ 535nm) 2-SMD, No Lead, Exposed Pad | 获取价格 | ||
| AISC-1008F-2R2G-T | Abracon LLC. | 高频电感 1.15Ω 2.2µH ±2% 520mA 150MHz 2.29mm 2.92 x 2.79mm IND_2.92X2.79MM_SM | 获取价格 | ||
| LM2735|LM2735-Q1 | Texas Instruments | LM2735-xx 520-kHz and 1.6-MHz Space-Efficient Boost and SEPIC DC-DC Regulator datasheet (Rev. H) | 获取价格 | ||
| SDN520C | SECOS[SeCoSHalbleitertechnologieGmbH] | SDN520C - N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET - SeCoS Halbleitertechnologie GmbH | 获取价格 | ||
| LM2735XMY | NSC[NationalSemiconductor] | LM2735XMY - 520kHz/1.6MHz - Space-Efficient Boost and SEPIC DC-DC Regulator - National Semiconductor | 获取价格 | ||
| RA55H4452M-101 | MITSUBISHI[MitsubishiElectricSemiconductor] | RA55H4452M-101 - 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO - Mitsubishi Electric Semiconductor | 获取价格 | ||
| RA30H4552M1_08 | MITSUBISHI[MitsubishiElectricSemiconductor] | RA30H4552M1_08 - RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO - Mitsubishi Electric Semiconductor | 获取价格 | ||
| RA07M4452M_06 | MITSUBISHI[MitsubishiElectricSemiconductor] | RA07M4452M_06 - RoHS Compliance , 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO - Mitsubishi Electric Semiconductor | 获取价格 | ||
| RA07M4452M | MITSUBISHI[MitsubishiElectricSemiconductor] | RA07M4452M - RoHS Compliance , 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO - Mitsubishi Electric Semiconductor | 获取价格 | ||
| RA07H4452M-101 | MITSUBISHI[MitsubishiElectricSemiconductor] | RA07H4452M-101 - RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO - Mitsubishi Electric Semiconductor | 获取价格 | ||
| 09 18 520 6323 | Harting Technology Group | HARTING - 09 18 520 6323 - Pin Header, Right Angle, Wire-to-Board, 2.54 mm, 2 Rows, 20 Contacts, Through Hole Right Angle | 获取价格 | ||
| 09 18 520 7914 | Harting Technology Group | HARTING - 09 18 520 7914 - Pin Header, Short Latch, Wire-to-Board, 2.54 mm, 2 Rows, 20 Contacts, Through Hole, SEK 18 | 获取价格 | ||
| 09 18 520 7903 | Harting Technology Group | HARTING - 09 18 520 7903 - Pin Header, Long Latch, Wire-to-Board, 2.54 mm, 2 Rows, 20 Contacts, Through Hole Right Angle | 获取价格 | ||
| 09 18 520 7904 | Harting Technology Group | HARTING - 09 18 520 7904 - Pin Header, Long Latch, Wire-to-Board, 2.54 mm, 2 Rows, 20 Contacts, Through Hole, SEK 18 | 获取价格 | ||
| ELJQE22NGFA | Panasonic Corporation | Inductor RF Chip Laser Cut 22nH 2% 100MHz 15Q-Factor Ceramic 290mA 520mOhm DCR 0603 T/R | 获取价格 | ||
| PBHV9115X,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):520mW;直流电流增益(hFE@Ic,Vce):100@100mA,10V; | 获取价格 | ||
| BC850CLT1G | Murata Manufacturing Co., Ltd. | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):520@2mA,5V; | 获取价格 |
