MMBT4401

SMD General Purpose Transistor (NPN) MMBT4401 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Marking Code Description MMBT4401 2X 60 40 6.0 0.6 250 357 150 -55 to +150 V V V A mW ° C /W °C °C Note 1 Unit Conditions VCBO VCEO VEBO IC Ptot RθJA TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’ TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-03-26 Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. 20 40 Max. 300 0.40 0.75 0.95 1.20 0.1 0.1 15 8.0 30 500 6.5 30 15 20 225 30 nS MHz pF pF V V V V Unit Conditions VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=0.4V, VCE=35V VEB=0.4V, VCE=35V VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 IB1=15mA IC=150mA VCC=30V VEB=2V IB1=IB2=15mA IC=150mA VCC=30V hFE D.C. Current Gain 80 100 40 V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV IBEV hie hre hoe hfe fT CCBO CEBO td tr ts tf Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage 60 40 6.0 0.75 1.0 0.1 1.0 40 250 - Base-Emitter Saturation Voltage Collector Cut-off Current Base Cut-off Current Input Impedance Voltage Feedback Ratio Output Admittance Small Signal Current Gain Current Gain-Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time V µA µA kΩ x10‫־‬ μS 4 *Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0% Rev. A/AH 2008-03-25 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-03-25 www.taitroncomponents.com Page 3 of 3