SIJ150DP-T1-GE3

SiJ150DP www.vishay.com Vishay Siliconix N-Channel 45 V (D-S) MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® Gen IV power MOSFET • Very low Qg and Qoss reduce power loss and improve efficiency D 6. 15 m m m 1 13 m 4 G 5. Top View 3 S 2 S 1 S • 100 % Rg and UIS tested • Qgd/Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • Flexible leads provide resilience to mechanical stress APPLICATIONS 45 0.00283 0.00410 21.4 110 Single D • Synchronous rectification • High power density DC/DC G • DC/AC inverters N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8L SiJ150DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 45 +20, -16 110 88 30.9 b, c 24.6 b, c 300 59.7 3 b, c 30 45 65.7 42 5.2 b, c 3.3 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 20 25 °C/W 1.5 1.9 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 62.5 °C/W S19-0635-Rev. A, 22-Jul-2019 Document Number: 77134 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ150DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 45 - - VDS/TJ ID = 1 mA - 28 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -5.4 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 45 V, VGS = 0 V - - 1 VDS = 45 V, VGS = 0 V, TJ = 75 °C - - 20 VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 15 A - 0.00225 0.00283 VGS = 4.5 V, ID = 15 A - 0.00310 0.00410 VDS = 10 V, ID = 15 A - 72 - μA A  S Dynamic b Input capacitance Ciss - 4000 - Output capacitance Coss - 630 - Reverse transfer capacitance Crss - 56 - - 0.014 0.028 - 46.7 70 - 21.4 32 - 11.1 - - 3.6 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg VDS = 20 V, VGS = 10 V, ID = 15 A VDS = 20 V, VGS = 4.5 V, ID = 15 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 28 - Gate resistance Rg f = 1 MHz 0.5 1.15 2 - 15 30 - 6 12 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  pF nC  - 30 60 tf - 6 12 td(on) - 30 60 - 67 134 - 28 56 - 10 20 - - 59.7 - - 300 - 0.72 1.1 V - 32 64 ns - 24 48 nC - 17 - - 15 - tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 15 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0635-Rev. A, 22-Jul-2019 Document Number: 77134 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ150DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 250 VGS = 10 V thru 4 V 80 100 VGS = 3 V 1000 150 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 200 1st line 2nd line 100 TC = 25 °C 40 50 10 0 0 1 2 3 4 TC = -55 °C TC = 125 °C VGS = 2 V 10 0 5 0 1 2 3 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 Axis Title 10000 0.0058 10000 10 000 Ciss VGS = 4.5 V 0.0038 0.0028 100 0.0018 Coss 1000 1000 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.0048 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) Axis Title Crss 100 100 VGS = 10 V 10 0.0008 0 40 80 120 160 10 10 200 0 9 18 36 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10000 1000 1st line 2nd line VDS = 10 V, 20 V, 30 V 4 100 2 10 0 20 30 40 50 2nd line RDS(on) - On-Resistance (Normalized) ID = 15 A 6 10000 1.9 8 10 45 Axis Title Axis Title 0 27 ID - Drain Current (A) 10 2nd line VGS - Gate-to-Source Voltage (V) 100 VGS = 10 V, 15 A 1.6 1000 1.3 1.0 VGS = 4.5 V, 15 A 100 0.7 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0635-Rev. A, 22-Jul-2019 1st line 2nd line 2nd line ID - Drain Current (A) 160 Document Number: 77134 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ150DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.015 10000 100 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0.009 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 15 A 0.012 0.006 100 TJ = 125 °C 0.003 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.5 10000 500 0.2 400 1000 100 ID = 250 μA 300 1st line 2nd line ID = 5 mA -0.4 1000 2nd line P - Power (W) -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 6 200 100 -0.7 100 10 -1.0 -50 -25 0 25 50 75 0 0.0001 100 125 150 10 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited ID limited 1000 100 μs 10 1 ms Limited by RDS(on) a 10 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 ms 1s 0.1 10 s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area S19-0635-Rev. A, 22-Jul-2019 Document Number: 77134 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ150DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 125 1000 75 1st line 2nd line 2nd line ID - Drain Current (A) 100 50 100 25 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 2.0 1st line 2nd line 32 100 1000 1.5 1st line 2nd line 1000 48 2nd line P - Power (W) 64 2nd line P - Power (W) 10000 2.5 10000 80 1.0 100 0.5 16 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0635-Rev. A, 22-Jul-2019 Document Number: 77134 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ150DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 62.5 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.1 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77134. S19-0635-Rev. A, 22-Jul-2019 Document Number: 77134 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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