SIJ470DP-T1-GE3

SiJ470DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0091 at VGS = 10 V 58.8 0.0100 at VGS = 7.5 V 54.6 VDS (V) 100 Qg (Typ.) 28.5 nC • 100 % Rg and UIS Tested • Material categorization:  For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Single m 5m 6.1 • ThunderFET® Technology Optimizes Balance of RDS(on), Qg, Qsw and Qoss 5.1 3m m APPLICATIONS D • Primary Side Switching • Synchronous Rectification D • DC/AC Inverters 4 G S • LED Backlighting 3 S 2 S G • High Current Switching 1 Ordering Information: SiJ470DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 47 ID 17.4b, c 13.9b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 51.6 IS 4.5b, c IAS 40 EAS 80 mJ 56.8 36.3 PD W 5b, c 3.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 150 TC = 25 °C Maximum Power Dissipation V 58.8 TA = 70 °C Pulsed Drain Current (t = 100 μs) Unit TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Symbol RthJA Typical 20 Maximum 25 Steady State RthJC 1.8 2.2 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. S13-1672-Rev. A, 29-Jul-13 Document Number: 62883 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ470DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VDS VGS = 0 V, ID = 250 μA 100 - - - V 63 - - - 7.2 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.3 - 3.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - A VGS = 10 V, ID = 20 A - 0.0076 0.0091 VGS = 7.5 V, ID = 15 A - 0.0083 0.0100  VDS = 10 V, ID = 20 A - 60 - - 2050 - VDS = 50 V, VGS = 0 V, f = 1 MHz - 470 - - 40 - μA S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = 50 V,VGS = 10 V, ID = 20 A VDS = 50 V,VGS = 7.5 V, ID = 20 A - 36.9 56 - 28.5 43 Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 50 V, VGS = 0 V - 52 80 Rg f = 1 MHz 0.5 1.35 2.2 - 12 24 - 8 16 - 22 24 tf - 7 14 td(on) - 13 26 - 12 24 - 22 44 - 8 16 Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time td(on) tr td(off) tr td(off) VDD = 50 V, RL = 2.5  ID  20 A, VGEN = 10 V, Rg = 1  VDD = 50 V, RL = 2.5  ID  20 A, VGEN = 7.5 V, Rg = 1  tf - 7.9 - - 9.2 - pF nC  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 5 A IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 51.6 - - 150 - 0.76 1.1 V - 44 85 ns - 67 130 nC - 27 - - 17 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1672-Rev. A, 29-Jul-13 Document Number: 62883 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ470DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 120 VGS = 10 V thru 6 V 100 ID - Drain Current (A) ID - Drain Current (A) 100 80 VGS = 5 V 60 40 80 TC = 25 °C 60 40 TC = 125 °C 20 20 TC = - 55 °C VGS = 4 V VGS = 3 V 0 0.0 1.0 2.0 3.0 4.0 0 5.0 0.0 2.0 VDS - Drain-to-Source Voltage (V) 8.0 10.0 Transfer Characteristics 0.0090 3500 0.0085 2800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 6.0 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 7.5 V 0.0080 0.0075 0.0070 4.0 Ciss 2100 Coss 1400 700 VGS = 10 V Crss 0 0.0065 0 20 40 60 80 0 100 12 24 36 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.0 RDS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 48 VDS = 50 V 8 6 VDS = 25 V VDS = 75 V 4 2 VGS = 10 V ID = 20 A 1.7 1.4 VGS = 7.5 V 1.1 0.8 0.5 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge S13-1672-Rev. A, 29-Jul-13 32 40 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62883 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ470DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.040 TJ = 25 °C 1 0.1 0.01 0.024 TJ = 125 °C 0.016 TJ = 25 °C 0.008 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 500 0.2 400 - 0.1 300 ID = 5 mA - 0.4 - 0.7 - 1.0 - 25 0 25 50 200 100 ID = 250 μA - 50 2 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) - Variance (V) ID = 20 A 0.032 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 ID - Drain Current (A) 100 IDM Limited 100 us 10 I Limited D 1 ms 1 Limited by R DS(on)* 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S13-1672-Rev. A, 29-Jul-13 Document Number: 62883 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ470DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 65 ID - Drain Current (A) 52 39 26 13 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 70 2.5 56 2.0 Power (W) Power (W) Current Derating* 42 1.5 28 1.0 14 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150      * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1672-Rev. A, 29-Jul-13 Document Number: 62883 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ470DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62883. S13-1672-Rev. A, 29-Jul-13 Document Number: 62883 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 1 W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 05-Aug-2019 Document Number: 69003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS MIN. NOM. INCHES MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: S19-0643-Rev. E, 05-Aug-2019 DWG: 5976 Note • Millimeters will gover Revision: 05-Aug-2019 Document Number: 69003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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