SiJ800DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) ()
ID (A)
0.0095 at VGS = 10 V
20a
0.0115 at VGS = 4.5 V
20a
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
16 nC
PowerPAK® SO-8L Single
APPLICATIONS
m
5m
6.1
•
•
•
•
5.1
3m
m
D
Backlight Inverter
High-Side Switch
Server, VRM, POL
DC/DC
D
G
4
G
S
3
S
2
S
1
S
N-Channel MOSFET
Ordering Information: SiJ800DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Limit
40
± 20
20a
20a
15.6b, c
12.5b, c
80
30
45
20a
3.5b, c
35.7
22.9
4.2b, c
2.7b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
25
2.9
Maximum
30
3.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
www.vishay.com
1
SiJ800DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
44
ID = 1.0 mA
mV/°C
- 5.9
VGS(th)
VDS = VGS , ID = 250 µA
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
1.2
30
µA
A
VGS 10 V, ID = 20 A
0.0078
0.0095
VGS 4.5 V, ID = 15 A
0.0092
0.0115
VDS = 15 V, ID = 20 A
70
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
2400
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 20 A
td(off)
pF
37
56
16
24
6.5
VDS = 20 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 20 V, RL = 20
ID 1.0 A, VGEN = 4.5 V, Rg = 1.0
1
5
10
30
45
15
25
45
70
tf
15
25
td(on)
9
15
tr
td(off)
nC
4.5
td(on)
tr
260
100
VDD = 20 V, RL = 20
ID 1.0 A, VGEN = 10 V, Rg = 1
tf
5
10
40
60
5
10
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
20
80
IS = 3.5 A, VGS 0 V
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
22
35
ns
14
25
nC
11
11
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
20
VGS = 4 V
VGS = 10 V thru 5 V
15
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
10
TC = 25 °C
5
20
VGS = 3 V
0
0.0
TC = 125 °C
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.012
3200
0.010
2400
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.008
VGS = 10 V
1600
0.006
800
Coss
0.004
Crss
0
0
15
30
45
60
0
5
ID - Drain Current (A)
15
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
10
ID = 20 A
ID = 20 A
VDS = 10 V
VGS = 10 V
1.7
VDS = 20 V
6
VDS = 30 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.4
VGS = 4.5 V
1.1
0.8
2
0
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
40
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
TJ = 25 °C
1
0.025
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
0.1
TJ = - 55 °C
0.020
TJ = 125 °C
0.015
0.010
0.01
TJ = 25 °C
0.001
0.0
0.005
0.2
0.4
0.6
0.8
1.0
1.2
0
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
10
500
400
Powe (W)
0.2
VGS(th) Variance (V)
2
VSD - Source-to-Drain Voltage (V)
- 0.2
ID = 1 mA
300
200
TA = 25 °C
- 0.6
100
ID = 250 µA
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
1000
Limited by RDS(on)*
I D - Drain Current (A)
100
10 µs
100 µs
10
1 ms
10 ms
1
0.1
100 ms
1s
10 s
TA = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
100 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
I D - Drain Current (A)
50
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
6
45
40
5
35
4
Power (W)
Power (W)
30
25
20
3
2
15
10
1
5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
www.vishay.com
5
SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64803.
www.vishay.com
6
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000