SIJ484DP-T1-GE3

New Product SiJ484DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK® SO-8L Single • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS m 5m 6.1 • DC/DC - High-Side Switch 5.1 3m m D D 4 G S G 3 S 2 S 1 S Ordering Information: SiJ484DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 35g 35g 21.5b, c 17.2b, c 70 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 35g 4.5b, c 20 20 27.7 17.7 A mJ 5.0b, c 3.2b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 3.4 Maximum 25 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package limited. Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 www.vishay.com 1 New Product SiJ484DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 30 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 5.0 1.2 30 µA A VGS = 10 V, ID = 10 A 0.0052 0.0063 VGS = 4.5 V, ID = 7 A 0.0067 0.0082 VDS = 10 V, ID = 10 A 50 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1600 VDS = 15 V, VGS = 0 V, f = 1 MHz 115 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 21 4.3 0.3 0.75 1.5 13 26 9 18 22 40 16 td(on) 22 40 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 13.7 8 td(off) Turn-Off Delay Time 45 tf tr Rise Time 30 nC 4.3 td(on) Turn-On Delay Time pF 335 13 26 26 50 12 24 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 35 70 IS = 3 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.75 1.1 V 19 35 ns 9.5 18 nC 11 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 New Product SiJ484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 70 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 TC = 25 °C 4 2 VGS = 3 V 14 6 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0082 2100 0.0074 1680 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.0066 0.0058 VGS = 10 V 1260 840 Coss 0.0050 420 0.0042 0 Crss 0 14 28 42 56 70 0 10 15 20 25 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 ID = 10 A VDS = 5 V 1.6 VDS = 10 V 6 VDS = 15 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance 8 0 0.0 30 1.8 ID = 10 A VGS - Gate-to-Source Voltage (V) 5 1.2 VGS = 4.5 V 1.0 0.8 6.4 12.8 19.2 25.6 32.0 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 150 www.vishay.com 3 New Product SiJ484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 10 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.024 0.018 0.012 TJ = 125 °C 0.006 0.01 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0 - 0.2 Power (W) VGS(th) Variance (V) 3 ID = 5 mA 120 80 - 0.4 ID = 250 µA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 New Product SiJ484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 55 I D - Drain Current (A) 44 Package Limited 33 22 11 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 35 2.5 28 2.0 Power (W) Power (W) Current Derating* 21 14 1.5 1.0 0.5 7 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 www.vishay.com 5 New Product SiJ484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64812. www.vishay.com 6 Document Number: 64812 S09-2274-Rev. A, 02-Nov-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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