找到“TIP112”相关的规格书共4,195个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| G9SB-200-B | Omron Electronics Inc-EMC Div | Electromechanical Relay 24VDC 24VAC 5A DPST-NO (100x18x112)mm DIN Rail Ultra Slim Safety Relay | 获取价格 | ||
| G9SB-2002-C | Omron Electronics Inc-EMC Div | Electromechanical Relay 24VDC 24VAC 5A DPST-NO (100x18x112)mm DIN Rail Ultra Slim Safety Relay | 获取价格 | ||
| A02ESH3B112IX0+PEA01+QH22L28RGC | APEM an IDEC company | APEM - A02ESH3B112IX0+PEA01+QH22L28RGC - Emergency Stop Switch, High-Security, DPST-NC, SPST-NO, Twist to Release, Screw, 3 A, 250 V | 获取价格 | ||
| EFM32GG12B810F1024GL112-A | Murata Manufacturing Co., Ltd. | Mcu, 32Bit, 72Mhz, Bga-112; Product Range:efm32 Family Efm32Gg Series Microcontrollers; Architecture:arm Cortex-M4; No. Of Bits:32Bit; Cpu Speed:72Mhz; Program Memory Size:1Mb; Ram Memory Size:192Kb; No. Of Pins:112Pins; Mcu Case Rohs Compliant: Yes | 获取价格 | ||
| 74LCX112MTC | Murata Manufacturing Co., Ltd. | LCX112 是一款双路 J-K 触发器。此触发器拥有独立的 J、K、预设、清除和时钟输入，以及 Q 和 Q# 输出。此类器件对边敏感，在时钟脉冲的负向转换时改变状态。预设和清除与时钟无关，通过相应输入上的低逻辑电平来完成。LCX 器件适用于低压（3.3V 或 2.5V）运行，增加了接口 5V 信号环境的能力。74LCX112 采用先进的 CMOS 工艺，在保持 CMOS 低功耗的同时，实现了高速运行。 | 获取价格 | ||
| 74LCX112M | Murata Manufacturing Co., Ltd. | LCX112 是一款双路 J-K 触发器。此触发器拥有独立的 J、K、预设、清除和时钟输入，以及 Q 和 Q# 输出。此类器件对边敏感，在时钟脉冲的负向转换时改变状态。预设和清除与时钟无关，通过相应输入上的低逻辑电平来完成。LCX 器件适用于低压（3.3V 或 2.5V）运行，增加了接口 5V 信号环境的能力。74LCX112 采用先进的 CMOS 工艺，在保持 CMOS 低功耗的同时，实现了高速运行。 | 获取价格 | ||
| HSL0004 | HUASHUO SEMICONDUCTOR | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):3A;功率(Pd):1.5W;导通电阻(RDS(on)@Vgs,Id):112mΩ@10V,2A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| AM29LV640ML112RPCI | AMD[AdvancedMicroDevices] | AM29LV640ML112RPCI - 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices | 获取价格 | ||
| AM29LV640MH112PCI | AMD[AdvancedMicroDevices] | AM29LV640MH112PCI - 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices | 获取价格 | ||
| AM29LV640MH112EI | AMD[AdvancedMicroDevices] | AM29LV640MH112EI - 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices | 获取价格 | ||
| S29CD032G0MQAI112 | SPANSION[SPANSION] | S29CD032G0MQAI112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD032G0MFFA112 | SPANSION[SPANSION] | S29CD032G0MFFA112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD032G0JQFI112 | SPANSION[SPANSION] | S29CD032G0JQFI112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0MQAA112 | SPANSION[SPANSION] | S29CD016G0MQAA112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0MFFM112 | SPANSION[SPANSION] | S29CD016G0MFFM112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0MFFI112 | SPANSION[SPANSION] | S29CD016G0MFFI112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0MFFA112 | SPANSION[SPANSION] | S29CD016G0MFFA112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0JQAM112 | SPANSION[SPANSION] | S29CD016G0JQAM112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| S29CD016G0JFFM112 | SPANSION[SPANSION] | S29CD016G0JFFM112 - 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O - SPANSION | 获取价格 | ||
| FXC1040-330M | Changjiang Microelectronics Technology Co., Ltd. | SMD，11.0*10.0*3.8mm（1004） 电感值：33µH 精度：±20% 饱和电流（isat）：5A 温升电流（irms）：3.5A 直流电阻(DCR)：112mΩ 羰基，一体成型电感 | 获取价格 |
