SI7962DP

Si7962DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 11.1 rDS(on) (W) 0.017 @ VGS = 10 V Qg(Typ) 46.2 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Package Dual MOSFET for Space Savings 100% Rg Tested High Threshold Voltage At High Temperature PowerPAK SO-8 D1 6.15 mm S1 D2 1 2 G1 S2 5.15 mm 3 4 G2 D1 G1 G2 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View Ordering Information: Si7962DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 11.1 8.9 40 2.9 30 45 3.5 2.2 Steady State Unit V 7.1 5.7 A 1.2 mJ 1.4 0.9 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit _C/W Document Number: 72914 S-42058—Rev. B, 15-Nov-04 www.vishay.com 1 Si7962DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11.1 A VDS = 15 V, ID = 11.1 A IS = 2.9 A, VGS = 0 V 30 0.0135 31 0.8 1.2 0.017 3.4 4.5 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resostamce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 1.1 VDS = 20 V, VGS = 10 V, ID = 11.1 A 46.2 16 9.6 2.3 22 15 55 15 35 3.5 35 25 70 25 60 ns W 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 7 V 32 I D − Drain Current (A) I D − Drain Current (A) 6V 32 40 Transfer Characteristics 24 24 16 16 TC = 125_C 8 25_C 0 −55_C 5 6 7 8 5V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 1 2 3 4 VGS − Gate-to-Source Voltage (V) Document Number: 72914 S-42058—Rev. B, 15-Nov-04 www.vishay.com 2 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.020 r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 4000 Capacitance 0.015 VGS = 10 V C − Capacitance (pF) 3200 Ciss 2400 0.010 1600 0.005 800 Coss Crss 0.000 0 5 10 15 20 25 30 35 40 0 0 8 16 24 32 40 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 20 V ID = 11.1 A 8 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11.1 A 6 1.2 4 1.0 2 0.8 0 0 10 20 30 40 50 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.04 ID = 11.1 A 0.03 I S − Source Current (A) TJ = 25_C 0.02 0.01 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72914 S-42058—Rev. B, 15-Nov-04 www.vishay.com 3 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.4 V GS(th) Variance (V) ID = 250 mA −0.0 −0.4 −0.8 −1.2 −1.6 −50 20 Power (W) 60 100 Single Pulse Power 80 40 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient *rDS(on) Limited IDM Limited P(t) = 0.0001 P(t) = 0.001 10 I D − Drain Current (A) 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72914 S-42058—Rev. B, 15-Nov-04 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Normalized Effective Transient Thermal Impedance 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72914. Document Number: 72914 S-42058—Rev. B, 15-Nov-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1