找到“ZXMP6A18DN8TA”相关的规格书共130,351个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| B66284F2204X | EPCOS/TDK | CLAMPELP18X4X10I18X2X10 | 获取价格 | ||
| PTS06CGMSS2-14-18P | Amphenol Corporation | PTSE18C18#20PINPLUG | 获取价格 | ||
| 1200661686 | Molex Incorporated | MIC 5P M/MFE 18M #18/5 TPE | 获取价格 | ||
| PT01CGCA12-14-18S | Amphenol Corporation | PT18C18#20SKTRECP | 获取价格 | ||
| PT05E14-18S-023 | Amphenol Corporation | PT18C18#20SKTPLUG | 获取价格 | ||
| PT07SE14-18P-027 | Amphenol Corporation | PTSE18C18#20PINRECP | 获取价格 | ||
| 0854.0615 | SCHURTER Electronic | LENS DIFFUSED BLUE 18X18MM | 获取价格 | ||
| EV1593DN-00A | MPS[MonolithicPowerSystems] | EV1593DN-00A - 3A, 28V, 385KHz Step-Down Converter - Monolithic Power Systems | 获取价格 | ||
| M68AW512DN70ZB6T | STMICROELECTRONICS[STMicroelectronics] | M68AW512DN70ZB6T - 8 Mbit 512K x16 3.0V Asynchronous SRAM - STMicroelectronics | 获取价格 | ||
| M68AR512DN70ZB6T | STMICROELECTRONICS[STMicroelectronics] | M68AR512DN70ZB6T - 8 Mbit 512K x16 1.8V Asynchronous SRAM - STMicroelectronics | 获取价格 | ||
| M68AR016DN70ZH6T | STMICROELECTRONICS[STMicroelectronics] | M68AR016DN70ZH6T - 16 Mbit 1M x16 1.8V Asynchronous SRAM - STMicroelectronics | 获取价格 | ||
| S330K25U2MS6.K7. | VISHAY[VishaySiliconix] | S330K25U2MS6.K7. - Ceramic Disc Capacitors Safety, Class X1/Y2 400/250 V (AC) Series DN - Vishay Siliconix | 获取价格 | ||
| NAND08GW4B4DN6F | NUMONYX[NumonyxB.V] | NAND08GW4B4DN6F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GW3B2DN6F | NUMONYX[NumonyxB.V] | NAND08GW3B2DN6F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GR4B4DN6E | NUMONYX[NumonyxB.V] | NAND08GR4B4DN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GR4B2DN6E | NUMONYX[NumonyxB.V] | NAND08GR4B2DN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GR3B2DN1F | NUMONYX[NumonyxB.V] | NAND08GR3B2DN1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B4DN1F | NUMONYX[NumonyxB.V] | NAND04GR4B4DN1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B2DN6E | NUMONYX[NumonyxB.V] | NAND04GR4B2DN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| S151K33Y5PS6.K7. | VISHAY[VishaySiliconix] | S151K33Y5PS6.K7. - Ceramic Disc Capacitors Safety, Class X1/Y2 400/250 V (AC) Series DN - Vishay Siliconix | 获取价格 |
