S8050
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1.BASE
2.EMITTER
3.COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA,
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,
IE=0
IB=0
IC=0
MIN
TYP
MAX
UNIT
40
V
25
V
5
V
Collector cut-off current
ICBO
VCB=40 V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCB=20V,
IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 5V,
IC=0
0.1
µA
HFE(1)
VCE=1V,
IC= 50mA
200
HFE(2)
VCE=1V,
IC= 500mA
50
350
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500 mA, IB= 50mA
1.2
V
VCE=6V,
Transition frequency
Page 1 of 3
fT
f=30MHz
IC= 20mA
150
MHz
5/30/2011
Typical Characteristics
Page 2 of 3
S8050
5/30/2011
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
Page 3 of 3
SOT-23
5/30/2011
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