找到“read_45_6”相关的规格书共2,916个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| EM4069A6WS7E | EMMICRO[EMMicroelectronic-MARINSA] | EM4069A6WS7E - 128 bit Read/Write Contactless Identification Device with OTP function - EM Microelectronic - MARIN SA | 获取价格 | ||
| EM4069A5WS11E | EMMICRO[EMMicroelectronic-MARINSA] | EM4069A5WS11E - 128 bit Read/Write Contactless Identification Device with OTP function - EM Microelectronic - MARIN SA | 获取价格 | ||
| EM4069A5CI2LB | EMMICRO[EMMicroelectronic-MARINSA] | EM4069A5CI2LB - 128 bit Read/Write Contactless Identification Device with OTP function - EM Microelectronic - MARIN SA | 获取价格 | ||
| EM4006F9WW21E | EMMICRO[EMMicroelectronic-MARINSA] | EM4006F9WW21E - 13.56 MHz 64 Data bit Read Only Contactless Identification Device - EM Microelectronic - MARIN SA | 获取价格 | ||
| EM4006F9WP21 | EMMICRO[EMMicroelectronic-MARINSA] | EM4006F9WP21 - 13.56 MHz 64 Data bit Read Only Contactless Identification Device - EM Microelectronic - MARIN SA | 获取价格 | ||
| CYF2036V | CYPRESS[CypressSemiconductor] | CYF2036V - 18/36/72-Mbit Programmable Multi-Queue FIFOs Independent read and write ports - Cypress Semiconductor | 获取价格 | ||
| CY7C1576V18 | CYPRESS[CypressSemiconductor] | CY7C1576V18 - 72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) - Cypress Semiconductor | 获取价格 | ||
| CY7C1563V18 | CYPRESS[CypressSemiconductor] | CY7C1563V18 - 72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) - Cypress Semiconductor | 获取价格 | ||
| CY7C1556V18 | CYPRESS[CypressSemiconductor] | CY7C1556V18 - 72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) - Cypress Semiconductor | 获取价格 | ||
| CY7C1543V18 | CYPRESS[CypressSemiconductor] | CY7C1543V18 - 72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) - Cypress Semiconductor | 获取价格 | ||
| HN58X25256TIAG | RENESAS[RenesasTechnologyCorp] | HN58X25256TIAG - Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp | 获取价格 | ||
| HN58X2516IAG | RENESAS[RenesasTechnologyCorp] | HN58X2516IAG - Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp | 获取价格 | ||
| HN58X2508I_05 | RENESAS[RenesasTechnologyCorp] | HN58X2508I_05 - Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp | 获取价格 | ||
| HN58X2504TIE | RENESAS[RenesasTechnologyCorp] | HN58X2504TIE - Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp | 获取价格 | ||
| HN58X2504TIAG | RENESAS[RenesasTechnologyCorp] | HN58X2504TIAG - Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp | 获取价格 | ||
| CY14V101LA | CYPRESS[CypressSemiconductor] | CY14V101LA - 1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles - Cypress Semiconductor | 获取价格 | ||
| CY14E512J | CYPRESS[CypressSemiconductor] | CY14E512J - 512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles - Cypress Semiconductor | 获取价格 | ||
| CY14C512Q | CYPRESS[CypressSemiconductor] | CY14C512Q - 512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles - Cypress Semiconductor | 获取价格 | ||
| M34S32BN6T | STMICROELECTRONICS[STMicroelectronics] | M34S32BN6T - 32K Serial I2C Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page - STMicroelectronics | 获取价格 | ||
| M34S32BN | STMICROELECTRONICS[STMicroelectronics] | M34S32BN - 32K Serial I2C Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page - STMicroelectronics | 获取价格 |
