| 1 | MMBT489LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):1A;功率(Pd):710mW;直流电流增益(hFE@Ic,Vce):300@500mA... | 下载 | Murata Manufacturing Co., Ltd. |
| 2 | MMBT6521LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):300@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 3 | MMBT5087LT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):50mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):250@100... | 下载 | Murata Manufacturing Co., Ltd. |
| 4 | MMBT5550LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):140V;集电极电流(Ic):600mA;功率(Pd):225mW; | 下载 | Murata Manufacturing Co., Ltd. |
| 5 | MCR100G-8-AD-AE3-R编带 | 单向可控硅 | 下载 | Unisonic Technology Co., Ltd. |
| 6 | MMBFJ175LT1G | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 7 | MMBF4391LT1G | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 8 | MMBFJ309LT1G | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 9 | MGSF1N02LT1G | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):750mA;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):90mΩ@10V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 10 | MMBFJ176 | FET类型:-;栅源击穿电压(V(BR)GSS):-;栅源截止电压(VGS(off)@ID):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(R... | 下载 | Murata Manufacturing Co., Ltd. |
| 11 | MMBF4117 | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 12 | MMBF4393LT1G | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 13 | MMBT2222ALT3G | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Murata Manufacturing Co., Ltd. |
| 14 | MGSF2N02ELT1G | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):85mΩ@4.5V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | MMBT3906-13-01-F | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@... | 下载 | Diodes Incorporated |
| 16 | MMBT3904 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):200mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | YFW |
| 17 | MC74HC125ADR2G | High-Performance Silicon-Gate CMOS | 下载 | Murata Manufacturing Co., Ltd. |
| 18 | MC34074DR2G | | 下载 | Murata Manufacturing Co., Ltd. |
| 19 | MOC3011SR2M | 可控硅类型:双向可控硅;正向电压:1.15V;正向电流:60mA;断态峰值电压(Vdrm):250V;输出电流(It(rms)):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | MMSZ8V2BW | | 下载 | FORMOSA MICROSEMI CO. LTD |
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