找到“114”相关的规格书共11,681个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| ESS-114-G-04 | Samtec Inc. | ELEVATED SOCKET STRIPS | 获取价格 | ||
| ESQ-114-24-G-D | Samtec Inc. | ELEVATED SOCKET STRIPS | 获取价格 | ||
| ESQ-114-14-T-T | Samtec Inc. | ELEVATED SOCKET STRIPS | 获取价格 | ||
| CLM-114-02-H-D | Samtec Inc. | 1MM MICRO STRIPS | 获取价格 | ||
| 651-114-75 | Marl International Ltd | 获取价格 | |||
| ADTC114ECAQ-7 | Diodes Incorporated | 晶体管 - 双极 (BJT) - 单，预偏置) NPN - 预偏压 50 V 100 mA 250 MHz 310 mW 表面贴装型 SOT-23-3 | 获取价格 | ||
| 53D114G6R3MD6 | Vishay Intertechnology, Inc. | CAP ALUM 110000UF 6.3V AXIAL | 获取价格 | ||
| C114C391J1G5CA | KEMET Corporation | Capacitor,ceramic,390Pf,100Vdc,5-% Tol,5+% Tol,np0-Tc Code,-30,30Ppm-Tc Rohs Compliant: Yes | 获取价格 | ||
| 622EN114-R | Honeywell Sensing and Productivity Solutions | SEALEDAEROSWITCH | 获取价格 | ||
| DTC114TM3T5G | Murata Manufacturing Co., Ltd. | Brt Transistor, 50V, 10Kohm, Sot-723-3; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:-; Product Range:-Rohs Compliant: Yes | 获取价格 | ||
| DTA114EM3T5G | Murata Manufacturing Co., Ltd. | Brt Transistor, 50V, 10K/10Kohm, Sc75, Full Reel; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes | 获取价格 | ||
| DTC114YET1G | Murata Manufacturing Co., Ltd. | Brt Transistor, 50V, 47K/10Kohm, Sc75; C; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistorrohs Compliant: Yes | 获取价格 | ||
| S29CL016J0MDGH114 | SPANSION[SPANSION] | S29CL016J0MDGH114 - 16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory - SPANSION | 获取价格 | ||
| S29CL016J0JDGH114 | SPANSION[SPANSION] | S29CL016J0JDGH114 - 16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory - SPANSION | 获取价格 | ||
| S29CD016J1MDGH114 | SPANSION[SPANSION] | S29CD016J1MDGH114 - 16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory - SPANSION | 获取价格 | ||
| ERJ-U1TJ114U | Panasonic Corporation | RES 110K OHM 5% 1W 2512 SMD | 获取价格 | ||
| XC2OO-114-8M | Shenzhen Yangxing Technology Co., Ltd | 无源晶振 8MHz ±10ppm 12pF 80Ω SMD3225_4P 表面贴装 -40℃~+125℃ 与老料号XC32258MOB4SA-18相同 | 获取价格 | ||
| PDTD114EUX | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):425mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):100mV@50mA,2.5mA;最小输入电压(VI(on)@Ic/Io,Vce/Vo):1.9V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):1V@100uA,5V;输出电压(VO(on)@Io/Ii):-;直流电流增益(hFE@Ic,Vce):70@50mA,5V | 获取价格 | ||
| PDTC114TM | Shanghai Prisemi Electronics Co.,Ltd | 晶体管类型:1个NPN-预偏置;功率(Pd):150mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 获取价格 | ||
| DTA114YM | Rubycon Corporation | 获取价格 |
