找到“115”相关的规格书共24,691个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SAC-5P-M 8MRB--10,0-115 | Phoenix Contact | PHOENIX CONTACT - SAC-5P-M 8MRB/10,0-115 - SENSOR CORD, 5P, M8 PLUG-FREE END, 10M | 获取价格 | ||
| SAC-5P-M 8MRB-- 5,0-115 | Phoenix Contact | PHOENIX CONTACT - SAC-5P-M 8MRB/ 5,0-115 - Sensor Cable, 90° M8 Plug, Free End, 5 Positions, 5 m, 16.4 ft | 获取价格 | ||
| ERJ-U12J115U | Panasonic Corporation | RES 1.1 M OHM 5% 3/4W 1812 SMD | 获取价格 | ||
| SCR0402F115R | Anhui Vico Technologies Co., Ltd. | 获取价格 | |||
| PZU15B2A115 | NXP Semiconductors | SINGLE ZENER DIODE | 获取价格 | ||
| PUMD9,115 | Rubycon Corporation | 1 NPN,1 PNP - Pre-Biased 300mW 100mA 50V SOT-363-6 Digital Transistors ROHS | 获取价格 | ||
| PUMH4,115 | Rubycon Corporation | 2 NPN - Pre-Biased 300mW 100mA 50V SOT-363 Digital Transistors ROHS | 获取价格 | ||
| PUMD10,115 | Rubycon Corporation | 1 NPN,1 PNP - Pre-Biased 300mW 100mA 50V SOT-363 Digital Transistors ROHS | 获取价格 | ||
| PUMD12,115 | Rubycon Corporation | +150℃@(Tj) 100@5mA,5V 100mV@5mA,0.25mA 10kΩ 4.7 180MHz 300mW 0.7V@100uA,5V 100mA 0.8V@1mA,0.3V 50V 100nA 1 NPN - Pre-Biased,1 PNP - Pre-Biased SOT-363 Digital Transistors ROHS | 获取价格 | ||
| PUMD20,115 | Rubycon Corporation | +150℃@(Tj) 30@20mA,5V 2.2kΩ 150mV@10mA,0.5mA 1 300mW 1.6V@20mA,0.3V 100mA 1.2V@1mA,5V 50V 100nA 1 NPN - Pre-Biased,1 PNP - Pre-Biased SOT-363 Digital Transistors ROHS | 获取价格 | ||
| BSP51,115 | Rubycon Corporation | 60V 2000@10V,500mA NPN 200MHz 50nA 1A 1.25W +150℃@(Tj) 1.3V@500mA,500uA SOT-223-3 Darlington Transistors ROHS | 获取价格 | ||
| BCX53,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):63@150mA,2V; | 获取价格 | ||
| PBSS5350X,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):3A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 获取价格 | ||
| PBSS4250X,115 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):1W;直流电流增益(hFE@Ic,Vce):300@1A,2V; | 获取价格 | ||
| BF620,115 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):50mA;功率(Pd):500mW;集电极截止电流(Icbo):10nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):600mV@30mA,5mA;直流电流增益(hFE@Ic,Vce):50@25mA,20V;特征频率(fT):60MHz;工作温度:+150℃@(Tj); | 获取价格 | ||
| PBLS6003D,115 | Rubycon Corporation | 晶体管类型:PNP - 预偏压;集电极电流Ic:700mA,100mA;集射极击穿电压Vce:60V,50V;额定功率:400mW; | 获取价格 | ||
| PMD3001D,115 | Rubycon Corporation | 获取价格 | |||
| PIMT1,115 | Rubycon Corporation | 晶体管类型:2个PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):100mA;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):200mV@50mA,5mA;直流电流增益(hFE@Ic,Vce):120@1mA,6V;特征频率(fT):100MHz;工作温度:+150℃@(Tj); | 获取价格 | ||
| PBHV8115Z,115 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):700mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):400mV@100mA,10mA;直流电流增益(hFE@Ic,Vce):50@500mA,10V;特征频率(fT):30MHz;工作温度:+150℃@(Tj); | 获取价格 | ||
| PBHV9050Z,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):500V;集电极电流(Ic):250mA;功率(Pd):700mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):140mV@100mA,20mA;直流电流增益(hFE@Ic,Vce):160@50mA,10V;特征频率(fT):50MHz;工作温度:+150℃@(Tj); | 获取价格 |
