找到“154PHB850K2G”相关的规格书共6,440个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 1025R-18K | API Delevan Inc. | 固定电感器 Axial 820nH ±10% 420mA 850mΩ 250MHz 28@25MHz | 获取价格 | ||
| RF3196 | RFMD[RFMicroDevices] | RF3196 - QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE - RF Micro Devices | 获取价格 | ||
| RF3166 | RFMD[RFMicroDevices] | RF3166 - QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE - RF Micro Devices | 获取价格 | ||
| RF3146 | RFMD[RFMicroDevices] | RF3146 - QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE - RF Micro Devices | 获取价格 | ||
| RF3145 | RFMD[RFMicroDevices] | RF3145 - QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE - RF Micro Devices | 获取价格 | ||
| RF3133PCBA | RFM[RFMonolithics,Inc] | RF3133PCBA - QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE - RF Monolithics, Inc | 获取价格 | ||
| RF3133 | RFMD[RFMicroDevices] | RF3133 - QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE - RF Micro Devices | 获取价格 | ||
| TSHG6410 | VISHAY[VishaySiliconix] | TSHG6410 - High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero - Vishay Siliconix | 获取价格 | ||
| FAR-F5KB-836M50-B4ER | FUJITSU[FujitsuComponentLimited.] | FAR-F5KB-836M50-B4ER - W-CDMA V (850) Tx (100/50ohm) - Fujitsu Component Limited. | 获取价格 | ||
| TRM-7000-EM | OPTOWAY[OptowayTechnologyInc] | TRM-7000-EM - 3.3V / 850 nm / 1.25 Gbps OPTICAL MULTI-MODE TRANSCEIVER - Optoway Technology Inc | 获取价格 | ||
| FTM-811XC-L03DG | SOURCE[SourcePhotonics,Inc.] | FTM-811XC-L03DG - 10G 850nm SFP Transceiver - Source Photonics, Inc. | 获取价格 | ||
| FTLF8519F2HNL | Finisar Corporation | Fiber Optic Transceiver Module Ethernet, Fibre Channel 2.125Gbps 850nm 3.3V LC Duplex Through Hole | 获取价格 | ||
| AFBR-57F5PZ | Foxconn Optical Interconnect Technologies, Inc. | FOXCONN - AFBR-57F5PZ - Fiber Optic Transceiver, Multimode SFP+, LC Duplex Port, 850 nm, 3.3 V, 14.025 Gbps | 获取价格 | ||
| FM5100-T3 | FORMOSA MICROSEMI CO. LTD | 直流反向耐压（Vr）:100V;平均整流电流（Io）:5A;正向压降（Vf）:850mV @ 5A; | 获取价格 | ||
| SR3100 | Goodwork Semiconductor Co.,Ltd. | 直流反向耐压(Vr):100V;平均整流电流(Io):3A;正向压降(Vf):850mV@3A; | 获取价格 | ||
| AVE477M10G24T-F | Cornell Dubilier Electronics | 470 µF 10 V 铝电解电容器 径向，Can - SMD 850 毫欧 @ 120Hz 85°C 时为 2000 小时 | 获取价格 | ||
| EKMM421VNN391MR50S | Nippon Chemicon | 390 µF 420 V 铝电解电容器 径向，Can - 卡入式 850 毫欧 @ 120Hz 105°C 时为 3000 小时 | 获取价格 | ||
| ESMM421VSN391MA35S | Nippon Chemicon | 390 µF 420 V 铝电解电容器 径向，Can - 卡入式 850 毫欧 @ 120Hz 85°C 时为 3000 小时 | 获取价格 | ||
| SFH 4230-Z | ams-OSRAM AG | 红外（IR） 发射器 850nm 1.8V 1A 250mW/sr @ 1A 120° 2-SMD，鸥翼 | 获取价格 | ||
| SFH 4236 | ams-OSRAM AG | 红外（IR） 发射器 850nm 1.5V 1A 250mW/sr @ 1A 40° 2-SMD，鸥翼 | 获取价格 |
