找到“2N7002”相关的规格书共533个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 2N7002KDW | PANJIT SEMI CONDUCTOR | 60V N沟道增强型MOSFET-ESD保护 | 获取价格 | ||
| 2N7002-TP | Micro Commercial Components | N沟道 漏源电压(Vdss)：60V 连续漏极电流(Id)：115mA 功率(Pd)：200mW | 获取价格 | ||
| 2N7002PSZ | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| 2N7002DWL-AL6-R | UTC[UnisonicTechnologies] | 2N7002DWL-AL6-R - 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002ZTG-AN3-R | UTC[UnisonicTechnologies] | 2N7002ZTG-AN3-R - 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002DWG-AL6-R | UTC[UnisonicTechnologies] | 2N7002DWG-AL6-R - 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002ZWL-AL3-R | UTC[UnisonicTechnologies] | 2N7002ZWL-AL3-R - 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002ZDWL-AL6-R | UTC[UnisonicTechnologies] | 2N7002ZDWL-AL6-R - 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002ZDWG-AL6-R | UTC[UnisonicTechnologies] | 2N7002ZDWG-AL6-R - 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Unisonic Technologies | 获取价格 | ||
| 2N7002KT1G-MS | Mason semiconductor | 获取价格 | |||
| 2N7002LT1G | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):7.5Ω@10V,500mA; | 获取价格 | ||
| 2N7002P,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):360mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA; | 获取价格 | ||
| 2N7002BK,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):350mA;功率(Pd):370mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA; | 获取价格 | ||
| 2N7002KT7G | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):320mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@500mA,10V; | 获取价格 | ||
| 2N7002WT1G | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):310mA;功率(Pd):280mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| 2N7002PW,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):310mA;功率(Pd):260mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA; | 获取价格 | ||
| 2N7002KWA-TP | Micro Commercial Components | 表面贴装型 N 通道 60 V 340mA 200mW SOT-323 | 获取价格 | ||
| 2N7002KT-TP | Micro Commercial Components | 表面贴装型 N 通道 60 V 115mA（Ta） 350mW SOT-523 | 获取价格 | ||
| 2N7002DWA-7 | Diodes Incorporated | MOSFET 2N-CH 60V 0.18A SOT363 | 获取价格 | ||
| 2N7002_S00Z | ON Semiconductor | MOSFET N-CH 60V 115MA SOT-23 | 获取价格 |
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