找到“65”相关的规格书共28,274个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| FCPF165N65S3R0L | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FCB070N65S3 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):44A;功率(Pd):312W;导通电阻(RDS(on)@Vgs,Id):70mΩ@10V,22A; | 获取价格 | ||
| FCD260N65S3 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):12A;功率(Pd):90W;导通电阻(RDS(on)@Vgs,Id):260mΩ@10V,6A; | 获取价格 | ||
| FCPF190N65S3R0L | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):17A;功率(Pd):144W;导通电阻(RDS(on)@Vgs,Id):190mΩ@10V,8.5A; | 获取价格 | ||
| FCP125N65S3R0 | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FCP110N65F | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):35A;功率(Pd):357W;导通电阻(RDS(on)@Vgs,Id):96mΩ@10V,17.5A;阈值电压(Vgs(th)@Id):5V@3.5mA;栅极电荷(Qg@Vgs):98nC@10V;输入电容(Ciss@Vds):3.68nF@100V;反向传输电容(Crss@Vds):0.65pF@100V;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| FCB110N65F | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):35A;功率(Pd):357W;导通电阻(RDS(on)@Vgs,Id):110mΩ@10V,17.5A; | 获取价格 | ||
| FCP260N65S3 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):12A;功率(Pd):90W;导通电阻(RDS(on)@Vgs,Id):260mΩ@6A,10V; | 获取价格 | ||
| FCMT360N65S3 | Murata Manufacturing Co., Ltd. | SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SUPERFET III MOSFET 非常适用于开关电源应用，如服务器/电信电源、适配器和太阳能反相器应用。Power88 封装是一款超薄表面贴装封装（高 1mm），体积和占地面积都很小 (8 * 8 mm2)。Power88 封装内的 SUP | 获取价格 | ||
| TC65 | Cornell Dubilier Electronics | 20 µF 350 V 铝电解电容器 轴向，CAN 7.63 欧姆 @ 120Hz 85°C 时为 1000 小时 | 获取价格 | ||
| SN65LVDT33|SN65LVDS33|SN65LVDT34|SN65LVDS34 | Texas Instruments | High Speed Differential Receivers datasheet (Rev. B) | 获取价格 | ||
| SN65MLVD206|SN65MLVD201|SN65MLVD203|SN65MLVD207 | Texas Instruments | Multipoint-LVDS Line Driver and Receiver datasheet (Rev. C) | 获取价格 | ||
| MB82DP02183F-65LTBG | FUJITSU[FujitsuComponentLimited.] | MB82DP02183F-65LTBG - MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory - Fujitsu Component Limited. | 获取价格 | ||
| PIC18LF65K80 | MICROCHIP[MicrochipTechnology] | PIC18LF65K80 - 28/40/44/64-Pin, Enhanced Flash Microcontrollers, with ECAN™ and nanoWatt XLP Technology - Microchip Technology | 获取价格 | ||
| S29PL-J65TFW020 | SPANSION[SPANSION] | S29PL-J65TFW020 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 | ||
| S29PL-J65TFI013 | SPANSION[SPANSION] | S29PL-J65TFI013 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 | ||
| S29PL-J65TAW002 | SPANSION[SPANSION] | S29PL-J65TAW002 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 | ||
| S29PL-J65TAW000 | SPANSION[SPANSION] | S29PL-J65TAW000 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 | ||
| S29PL-J65BFW011 | SPANSION[SPANSION] | S29PL-J65BFW011 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 | ||
| S29PL-J65BFW002 | SPANSION[SPANSION] | S29PL-J65BFW002 - CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control - SPANSION | 获取价格 |
