找到“660”相关的规格书共3,937个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 10AS066K2F35E2LG | Intel Corporation（Integrated Electronics Corporation) | Dual ARM® Cortex®-A9 MPCore™ with CoreSight™ System On Chip (SOC) IC Arria 10 SX FPGA - 660K Logic Elements 256KB 1.5GHz 1152-FBGA (35x35) | 获取价格 | ||
| 10AS066K3F40E2LG | Intel Corporation（Integrated Electronics Corporation) | Dual ARM® Cortex®-A9 MPCore™ with CoreSight™ System On Chip (SOC) IC Arria 10 SX FPGA - 660K Logic Elements 256KB 1.5GHz 1517-FBGA (40x40) | 获取价格 | ||
| PLT133--T10W | Everlight Electronics Co Ltd | 光电组件由一个660nm的AlGalnP LED和一个驱动IC组装而成，将电信号转换为光信号，通过直径1mm的塑料光纤传输。该器件工作在+3~+5V，具有低损耗电流、稳定的光输出和高效的光耦合性能。 | 获取价格 | ||
| ERJ-UP8J622V | Panasonic Corporation | Res, Aec-Q200, Thick Film, 6K2, 1206; Resistance:6.2Kohm; Resistance Tolerance:± 5%; Power Rating:660Mw; Resistor Case / Package:1206 [3216 Metric]; Resistor Technology:thick Film; Resistor Type:sulfur Resistant; Voltage Rating:500V Rohs Compliant: Yes | 获取价格 | ||
| ERJ-UP8D3403V | Panasonic Corporation | Res, Aec-Q200, Thick Film, 340K, 1206; Resistance:340Kohm; Resistance Tolerance:± 0.5%; Power Rating:660Mw; Resistor Case / Package:1206 [3216 Metric]; Resistor Technology:thick Film; Resistor Type:sulfur Resistant Rohs Compliant: Yes | 获取价格 | ||
| MBR2060GCT | Chongqing Pingwei Technology (Group) Co., Ltd. | 二极管配置:1对共阴极;直流反向耐压(Vr):60V;平均整流电流(Io):10A;正向压降(Vf):660mV@10A;反向电流(Ir):100uA@60V; | 获取价格 | ||
| CJ3139KW | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):660mA;功率(Pd):200mW;导通电阻(RDS(on)@Vgs,Id):520mΩ@4.5V,1A;阈值电压(Vgs(th)@Id):1.1V@250μA; | 获取价格 | ||
| 10AS066H2F34E2LG | Intel Corporation（Integrated Electronics Corporation) | Dual ARM® Cortex®-A9 MPCore™ with CoreSight™ System On Chip (SOC) IC Arria 10 SX FPGA - 660K Logic Elements 256KB 1.5GHz 1152-FCBGA (35x35) | 获取价格 | ||
| 10AS066K3F35E2LG | Intel Corporation（Integrated Electronics Corporation) | Dual ARM® Cortex®-A9 MPCore™ with CoreSight™ System On Chip (SOC) IC Arria 10 SX FPGA - 660K Logic Elements 256KB 1.5GHz 1152-FBGA (35x35) | 获取价格 | ||
| SSB-COB13340GW | LUMEX[LUMEXINC.] | SSB-COB13340GW - 133mm x 40mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN, 132 CHIPS, 4.2V 660mA - LUMEX INC. | 获取价格 | ||
| ERJ-UP8D1182V | Panasonic Corporation | Res, Aec-Q200, Thick Film, 11K8, 1206; Resistance:11.8Kohm; Resistance Tolerance:± 0.5%; Power Rating:660Mw; Resistor Case / Package:1206 [3216 Metric]; Resistor Technology:thick Film; Resistor Type:sulfur Resistant Rohs Compliant: Yes | 获取价格 | ||
| ERJ-UP8F75R0V | Panasonic Corporation | Res, Aec-Q200, Thick Film, 75R, 1206; Resistance:75Ohm; Resistance Tolerance:± 1%; Power Rating:660Mw; Resistor Case / Package:1206 [3216 Metric]; Resistor Technology:thick Film; Resistor Type:sulfur Resistant; Voltage Rating:500V Rohs Compliant: Yes | 获取价格 | ||
| BAS321JF | Nexperia | 二极管配置：独立式 功率：660mW 直流反向耐压(Vr)：200V 平均整流电流(Io)：250mA 正向压降(Vf)：1.25V@200mA 反向电流(Ir)：100nA@200V 反向恢复时间(trr)：50ns | 获取价格 | ||
| BAS321JX | Nexperia | 二极管配置：独立式 功率：660mW 直流反向耐压(Vr)：200V 平均整流电流(Io)：250mA 正向压降(Vf)：1.25V@200mA 反向电流(Ir)：100nA@200V 反向恢复时间(trr)：50ns | 获取价格 | ||
| AFGY100T65SPD | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):660W;集射极击穿电压(Vces):650V;集电极电流(Ic):120A;集电极脉冲电流(Icm):300A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):5.1mJ;关断损耗(Eoff):2.7mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FDC3612-HF | GUANGDONG KEXIN INDUSTRIAL CO.,LTD | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):2.6A;功率(Pd):1.6W;导通电阻(RDS(on)@Vgs,Id):125mΩ@10V,2.6A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):14nC@10V;输入电容(Ciss@Vds):660pF@50V;反向传输电容(Crss@Vds):40pF@50V;工作温度:+150℃@(Tj); | 获取价格 | ||
| TAL A47 | Leroy-Somer | Leroy-Somer/利莱森玛 功率：410-660kVA 绝缘等级：H 节距：2/3 (winding 6S) 出线：6 防护等级：IP 23 海拔：≤ 1000m 超速能力：2250 min-1 空气流量：0.9m3/s,50Hz-1.1m3/s,60Hz 励磁系统/AVR 类型 SHUNT:R150 励磁系统/AVR 类型 AREP:R180 电压调整率 (稳态)± 1% 总谐波失真THD空载 <1.5% - 负载<5% 波形Nema=TIF<50 波形I.E.C=THF<2% | 获取价格 |
