找到78P2344-IGT相关的规格书共6,552
型号厂商描述数据手册替代料参考价格
R5F52107ADLJRENESAS[RenesasTechnologyCorp] R5F52107ADLJ - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52106ADFNRENESAS[RenesasTechnologyCorp] R5F52106ADFN - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52106ADFGRENESAS[RenesasTechnologyCorp] R5F52106ADFG - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52106ADFFRENESAS[RenesasTechnologyCorp] R5F52106ADFF - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52105ADFGRENESAS[RenesasTechnologyCorp] R5F52105ADFG - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
RQ73C2A78K7BTDFTE Connectivity LtdHOLSWORTHY - TE CONNECTIVITY - RQ73C2A78K7BTDF - SMD Chip Resistor, 78.7 kohm, ± 0.1%, 200 mW, 0805 [2012 Metric], Thin Film获取价格
RQ73C1J1K78BTDFTE Connectivity LtdHOLSWORTHY - TE CONNECTIVITY - RQ73C1J1K78BTDF - SMD Chip Resistor, 1.78 kohm, ± 0.1%, 150 mW, 0603 [1608 Metric], Thin Film获取价格
RQ73C1J78K7BTDFTE Connectivity LtdHOLSWORTHY - TE CONNECTIVITY - RQ73C1J78K7BTDF - SMD Chip Resistor, 78.7 kohm, ± 0.1%, 150 mW, 0603 [1608 Metric], Thin Film获取价格
15KPA78ABrightking极性:单向;反向截止电压(Vrwm):78V;击穿电压:87.1V;峰值脉冲电流(Ipp)@10/1000μs:119.7A;最大钳位电压:126.1V;获取价格
0805AQ-015J-04Fastron technologies PTY LTDInductor RF Chip Molded/Unshielded Wirewound 0.015uH 5% 250MHz 78Q-Factor Ceramic 1.5A 0.06Ohm DCR 0805 Automotive T/R获取价格
BT136Rubycon Corporation可控硅类型:双向可控硅;断态峰值电压(Vdrm):600V;通态RMS电流(It(rms)):6A;浪涌电流(Itsm@f):25A@25ms;门极平均耗散功率(PG(AV)):500mW;通态峰值电压(Vtm):1.7V;门极触发电流(Igt):10mA;门极触发电压(Vgt):1.45V;保持电流(Ih):20mA;工作温度:-40℃~+125℃@(Tj);获取价格
3CT12BJilin Sino-Microelectronics Co., Ltd.可控硅类型:单向可控硅;断态峰值电压(Vdrm):800V;通态RMS电流(It(rms)):16A;浪涌电流(Itsm@f):190A@10ms;门极平均耗散功率(PG(AV)):1W;通态峰值电压(Vtm):1.6V;门极触发电流(Igt):25mA;门极触发电压(Vgt):1.3V;保持电流(Ih):40mA;工作温度:-40℃~+125℃@(Tj);获取价格
CRSD082N10L2Wuxi China Resources Microelectronics Limited类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA;获取价格
FXL0518-4R7-MChangjiang Microelectronics Technology Co., Ltd.SMD,5.4*5.2*1.6mm(0518) 电感值:4.7µH 精度:±20% 额定电流:3.5A 饱和电流:4A 直流电阻(DCR):78mΩ 合金电感/一体成型电感/大电流获取价格
87911-7811MOLEX10[MolexElectronicsLtd.] 87911-7811 - 2.54mm (.100) Pitch C-Grid® Header, Right Angle, Through Hole, 78 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, Tube Packaging, Lead-free - Molex Electronics Ltd.获取价格
70280-0079MOLEX1[MolexElectronicsLtd.] 70280-0079 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 78 Circuits, 0.38μm (15μ") Gold (Au) Selective Plating, Tin (Sn) PC Tail Plating - Molex Electronics Ltd.获取价格
78M05Taiwan shike Electronics co.,ltd输出类型:固定 输出极性:正 最大输入电压:35V 输出电压:5V 输出电流:500mA 电源纹波抑制比(PSRR):78dB@(120Hz) 稳压芯片 5.0V 500mA获取价格
71308-5478MOLEX8[MolexElectronicsLtd.] 71308-5478 - 2.54mm (.100") Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 78 Circuits1.50μm (59μ") Minimum Bright Tin (Sn) Over Nickel (Ni) Plating, without PCB Locator - Molex Electronics Ltd.获取价格
0702871184MOLEX8[MolexElectronicsLtd.] 0702871184 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 78 Circuits, 8.13mm (.320") Mating Pin Length, 0.38μm (15μ") Gold (Au) Selective - Molex Electronics Ltd.获取价格
0702871037MOLEX8[MolexElectronicsLtd.] 0702871037 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with Retention Pin, 78 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating - Molex Electronics Ltd.获取价格