找到78P2344-IGT相关的规格书共6,552
型号厂商描述数据手册替代料参考价格
0702871135MOLEX8[MolexElectronicsLtd.] 0702871135 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 78 Circuits, 6.10mm (.240") Mating Pin Length, 0.38μm (15μ") Gold (Au) Selective - Molex Electronics Ltd.获取价格
015-91-3780MOLEX2[MolexElectronicsLtd.] 015-91-3780 - 2.54mm (.100) Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 78 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, without PCB Locator Pegs - Molex Electronics Ltd.获取价格
015-91-1782MOLEX2[MolexElectronicsLtd.] 015-91-1782 - 2.54mm (.100) Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 78 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, with 3.30mm (.130) PCB Locator Pegs - Molex Electronics Ltd.获取价格
PMV65XPEARRubycon Corporation类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW;6.25W;导通电阻(RDS(on)@Vgs,Id):78mΩ@2.8A,4.5V;获取价格
SMAJ78AHANGZHOU DONGWO ELECTRONIC TECHNOLOGY CO. LTD.极性:单向;反向截止电压(Vrwm):78V;击穿电压:86.7V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:3.17A;最大钳位电压:126V;获取价格
SMAJ78CA/TR13Brightking极性:双向;反向截止电压(Vrwm):78V;击穿电压:86.7V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:3.2A;最大钳位电压:126V;获取价格
TPD65R380CWuxi Unigroup Microelectronics Co. Ltd.类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):11A;功率(Pd):78W;导通电阻(RDS(on)@Vgs,Id):380mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
010-89-7781MOLEX1[MolexElectronicsLtd.] 010-89-7781 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 78 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length - Molex Electronics Ltd.获取价格
A-70280-0039MOLEX1[MolexElectronicsLtd.] A-70280-0039 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 78 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length - Molex Electronics Ltd.获取价格
70287-1233MOLEX8[MolexElectronicsLtd.] 70287-1233 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 78 Circuits, 6.10mm (.240") Mating Pin Length, 0.76μm (30μ") Gold (Au) Selective - Molex Electronics Ltd.获取价格
0010897781MOLEX1[MolexElectronicsLtd.] 0010897781 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 78 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length - Molex Electronics Ltd.获取价格
R5F52108ADFMRENESAS[RenesasTechnologyCorp] R5F52108ADFM - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52107ADFMRENESAS[RenesasTechnologyCorp] R5F52107ADFM - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
R5F52105ADFMRENESAS[RenesasTechnologyCorp] R5F52105ADFM - 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA - Renesas Technology Corp获取价格
015-91-1783MOLEX2[MolexElectronicsLtd.] 015-91-1783 - 2.54mm (.100) Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 78 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, with 3.30mm (.130) PCB Locator Pegs - Molex Electronics Ltd.获取价格
FDMS3672Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):22A;功率(Pd):78W;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,7.4A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
FDMS2572Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):27A;功率(Pd):78W;导通电阻(RDS(on)@Vgs,Id):47mΩ@10V,4.5A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
FK1-24D05E3Guangzhou Aipu Electron Co.,Ltd.转换类型:DC-DC;是否隔离稳压:-;输出路数:2;输入电压(AC):-;输入电压(DC):18V~36V;输出电压:±5V;输出电流(最大值):±100mA;输出功率:1W;转换效率:78%;特性:短路保护;最大容性负载:1000uF;获取价格
78F391J-RCBourns Inc.Choke, 390Uh, 60Ma, 5%, 2.8Mhz; Product Range:78F Series; Inductance:390Μh; Dc Current Rating:95Ma; Dc Resistance Max:12.6Ohm; Inductance Tolerance:± 5%; Self Resonant Frequency:2.8Mhz; Case Dimensions:2.8Mm X 7.12Mm Rohs Compliant: Yes获取价格
78F3R9J-RCBourns Inc.Choke, 3.9Uh, 250Ma, 5%, 65Mhz; Product Range:78F Series; Inductance:3.9Μh; Dc Current Rating:555Ma; Dc Resistance Max:0.32Ohm; Inductance Tolerance:± 5%; Self Resonant Frequency:50Mhz; Case Dimensions:2.8Mm X 7.12Mm Rohs Compliant: Yes获取价格