找到BCY58相关的规格书共5,878
型号厂商描述数据手册替代料参考价格
015-91-1581MOLEX2[MolexElectronicsLtd.] 015-91-1581 - 2.54mm (.100) Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 58 Circuits, Tin (Sn) Plating, with 3.30mm (.130) PCB Locator Pegs - Molex Electronics Ltd.获取价格
SMCJ58CARubycon Corporation极性:双向;反向截止电压(Vrwm):58V;击穿电压:64V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:16.03A;最大钳位电压:93.6V;获取价格
SMAJ58CA/TR13Brightking极性:双向;反向截止电压(Vrwm):58V;击穿电压(最小值):64.4V;击穿电压(最大值):71.2V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:4.3A;最大钳位电压:93.6V;获取价格
010-89-7580MOLEX1[MolexElectronicsLtd.] 010-89-7580 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 58 Circuits, 0.76μm (30μ") Gold (Au) Selective Plating, - Molex Electronics Ltd.获取价格
FXC1365-330MChangjiang Microelectronics Technology Co., Ltd.SMD,13.5*12.6*6.2mm(1365) 电感值:33µH 精度:±20%  饱和电流(isat):11A 温升电流(irms):8A 直流电阻(DCR):58mΩ 羰基,一体成型电感获取价格
FXC1350-220MChangjiang Microelectronics Technology Co., Ltd.SMD,13.5*12.6*4.7mm(1205) 电感值:22µH 精度:±20%  饱和电流(isat):10A 温升电流(irms):6.5A 直流电阻(DCR):58mΩ 羰基,一体成型电感获取价格
FAUL0518-3R3MTChangjiang Microelectronics Technology Co., Ltd.SMD,5.4x5.2x1.6mm(0518) 电感值:3.3µH 精度:±20% 饱和电流(Isat):4.8A 直流电阻(DCR):58mΩ 类型:一体成型电感 车规级电感,一体成型,大电流,满足AEC-Q200认证获取价格
WPM3012-3/TRWill Semiconductor Co. Ltd功率MOSFET 30V 2.9A 58mΩ@10V,3.1A 800mW 1.9V@250uA 56pF@20V P Channel 654pF@20V 1.55nC@10V +150℃@(Tj) SOT-23获取价格
A-70567-0163MOLEX2[MolexElectronicsLtd.] A-70567-0163 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 58 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating - Molex Electronics Ltd.获取价格
70287-1223MOLEX8[MolexElectronicsLtd.] 70287-1223 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 58 Circuits, 6.10mm (.240") Mating Pin Length, 0.76μm (30μ") Gold (Au) Selective - Molex Electronics Ltd.获取价格
70287-1125MOLEX8[MolexElectronicsLtd.] 70287-1125 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 58 Circuits, 6.10mm (.240") Mating Pin Length, 0.38μm (15μ") Gold (Au) Selective - Molex Electronics Ltd.获取价格
70287-1076MOLEX8[MolexElectronicsLtd.] 70287-1076 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 58 Circuits, 8.13mm (.320") Mating Pin Length, Tin (Sn) Plating - Molex Electronics Ltd.获取价格
70287-1027MOLEX8[MolexElectronicsLtd.] 70287-1027 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 58 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating - Molex Electronics Ltd.获取价格
71349-2027MOLEX8[MolexElectronicsLtd.] 71349-2027 - 2.54mm (.100") Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, Shrouded58 Circuits, Tin (Sn) Plating, with Press-fit Plastic Pegs - Molex Electronics Ltd.获取价格
AFE58JD16Texas InstrumentsAFE58JD16 16-Channel Ultrasound AFE with 90-mW/Channel Power, 1-nV/√Hz Noise, 14-Bit, 65-MSPS or 12-Bit, 80-MSPS ADC and Passive CW Mixer datasheet (Rev. A)获取价格
0015911582MOLEX2[MolexElectronicsLtd.] 0015911582 - 2.54mm (.100) Pitch C-Grid® Header, Surface Mount, Dual Row, Vertical, 58 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, with 3.30mm (.130) PCB Locator Pegs - Molex Electronics Ltd.获取价格
0015800585MOLEX2[MolexElectronicsLtd.] 0015800585 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 58 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating - Molex Electronics Ltd.获取价格
TC58NS256DCTOSHIBA[ToshibaSemiconductor] TC58NS256DC - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ®8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) - Toshiba Semiconductor获取价格
IDT58LVC162374APFIDT[IntegratedDeviceTechnology] IDT58LVC162374APF - 3.3V CMOS 16-BIT EDGE TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD - Integrated Device Technology获取价格
IDT58LVC162374APAIDT[IntegratedDeviceTechnology] IDT58LVC162374APA - 3.3V CMOS 16-BIT EDGE TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD - Integrated Device Technology获取价格