找到“BD3571FP”相关的规格书共14,493个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| GS816218BD-200I | GSI[GSITechnology] | GS816218BD-200I - 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| GS816218BD-150 | GSI[GSITechnology] | GS816218BD-150 - 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| GS8161Z32BD-250IV | GSI[GSITechnology] | GS8161Z32BD-250IV - 18Mb Pipelined and Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS8161Z32BD-200IV | GSI[GSITechnology] | GS8161Z32BD-200IV - 18Mb Pipelined and Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS8161Z18BD-150V | GSI[GSITechnology] | GS8161Z18BD-150V - 18Mb Pipelined and Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS8161FZ36BD-7.5 | GSI[GSITechnology] | GS8161FZ36BD-7.5 - 18Mb Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS8161FZ18BD-6.5 | GSI[GSITechnology] | GS8161FZ18BD-6.5 - 18Mb Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS8161FZ18BD-5.5 | GSI[GSITechnology] | GS8161FZ18BD-5.5 - 18Mb Flow Through Synchronous NBT SRAM - GSI Technology | 获取价格 | ||
| GS816136BD-200V | GSI[GSITechnology] | GS816136BD-200V - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| GS816132BD-200 | GSI[GSITechnology] | GS816132BD-200 - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| GS816132BD-150 | GSI[GSITechnology] | GS816132BD-150 - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| GS816118BD-200 | GSI[GSITechnology] | GS816118BD-200 - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs - GSI Technology | 获取价格 | ||
| FMX-325BD20E1 | CALIBER[CaliberElectronicsInc.] | FMX-325BD20E1 - 3.2X2.5X0.65mm Surface Mount Crystal - Caliber Electronics Inc. | 获取价格 | ||
| FMX-325BD20B1 | CALIBER[CaliberElectronicsInc.] | FMX-325BD20B1 - 3.2X2.5X0.65mm Surface Mount Crystal - Caliber Electronics Inc. | 获取价格 | ||
| 101C613U040BD2B | CDE[CornellDubilierElectronics] | 101C613U040BD2B - Type 101C -55 °C to 105 °C Low-ESR, Wide-Temperature Grade - Cornell Dubilier Electronics | 获取价格 | ||
| 101C442T200BD2B | CDE[CornellDubilierElectronics] | 101C442T200BD2B - Type 101C -55 °C to 105 °C Low-ESR, Wide-Temperature Grade - Cornell Dubilier Electronics | 获取价格 | ||
| 101C304U7R5BD2B | CDE[CornellDubilierElectronics] | 101C304U7R5BD2B - Type 101C -55 °C to 105 °C Low-ESR, Wide-Temperature Grade - Cornell Dubilier Electronics | 获取价格 | ||
| 101C104U025BD2B | CDE[CornellDubilierElectronics] | 101C104U025BD2B - Type 101C -55 °C to 105 °C Low-ESR, Wide-Temperature Grade - Cornell Dubilier Electronics | 获取价格 | ||
| KK4541BD | KODENSHI[KODENSHIKOREACORP.] | KK4541BD - Programmable Timer High-Performance Silicon-Gate CMOS - KODENSHI KOREA CORP. | 获取价格 | ||
| KK4516BD | KODENSHI[KODENSHIKOREACORP.] | KK4516BD - Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS - KODENSHI KOREA CORP. | 获取价格 |
