| VBA5311 | VBsemi Electronics Co. Ltd | MOS管 N-Channel, P-Channel VDS=30V VGS=±20V ID=11A,10.5A RDS(ON)=11mΩ,21mΩ@10V SOIC8_150MIL | | | 获取价格 |
| VBA2107 | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=12V VGS=±8V ID=10A RDS(ON)=5mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
| VBA1158N | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=150V VGS=±20V ID=5.4A RDS(ON)=80mΩ@10V SOIC8_150MIL | | | 获取价格 |
| VB2290 | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| VB162K | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| NTF2955PT1G | VBsemi Electronics Co. Ltd | NTF2955PT1G | | | 获取价格 |
| APM4828KC-TRL | VBsemi Electronics Co. Ltd | APM4828KC-TRL | | | 获取价格 |
| VBB1630 | VBsemi Electronics Co. Ltd | VBB1630 | | | 获取价格 |
| RRR040P03TL | VBsemi Electronics Co. Ltd | RRR040P03TL | | | 获取价格 |
| NTD5867NLT4G | VBsemi Electronics Co. Ltd | NTD5867NLT4G | | | 获取价格 |
| IRF7424TRPBF | VBsemi Electronics Co. Ltd | SOIC8_150MIL 5.6W | | | 获取价格 |
| AOD407 | VBsemi Electronics Co. Ltd | P通道60-V（D-S）MOSFET ID=30A PD=34W TO252 | | | 获取价格 |
| FDS4435BZ | VBsemi Electronics Co. Ltd | P沟道30-V（D-S）MOSFET ID=9A PD=4.2W SOIC8 | | | 获取价格 |
| DMP4025LSD | VBsemi Electronics Co. Ltd | DMP4025LSD | | | 获取价格 |
| IRLR3410TRPBF | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=100V VGS=±20V ID=15A RDS(ON)=114mΩ@10V TO252AA | | | 获取价格 |
| IRLR7843TRPBF | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=35.8A RDS(ON)=3mΩ@4.5V TO252AA | | | 获取价格 |
| SFT1350. | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=40V VGS=±20V ID=50A RDS(ON)=15mΩ@4.5V TO252AA | | | 获取价格 |
| SI4482DY | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=100V VGS=±20V ID=5.5A RDS(ON)=36mΩ@10V SOIC8_150MIL | | | 获取价格 |
| FDS8447 | VBsemi Electronics Co. Ltd | N沟道 漏源电压(Vdss)：40V 连续漏极电流(Id)：12A 功率(Pd)：6W | | | 获取价格 |
| UTM6016G | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=8A RDS(ON)=15mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
工商网监