LSIC1MO170E0750

LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet LSIC1MO170E0750 1700 V, 750 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value VDS 1700 V Typical RDS(ON) 750 mOhm 4.4 A ID (TC °C) Unit Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures Ultra-low on-resistance Agency Approvals and Environmental Environmental Approvals Applications • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Heating Circuit Diagram 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics .................................................................................................................................3 3.1. Static Characteristics (TJ = 25 °C unless otherwise specified) ................................................................3 3.2. Dynamic Characteristics (TJ = 25 °C unless otherwise specified) ...........................................................4 4. Reverse Diode Characteristics .......................................................................................................................4 5. Figure Data .....................................................................................................................................................5 6. Package Dimensions ......................................................................................................................................9 7. Part Numbering and Marking ..........................................................................................................................9 8. Packing Options ..............................................................................................................................................9 9. Packing Specifications ..................................................................................................................................10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings Characteristic Symbol Drain-Source Voltage Conditions Value Unit V VDS VGS = 0 V 1700 VGS = 20 V, TC = 25 °C 6.2 VGS = 20 V, TC = 100 °C 4.4 ID(pulse) TC = 25 °C 11 A PD TC = 25 °C, TJ = 175 °C 60 W Continuous Drain Current ID Pulsed Drain Current 1 Power Dissipation VGS,MAX Gate-Source Voltage Absolute maximum values Steady state 6 to +22 VGS,OP,TR 2 Transient, ttransient < 300 nsec 10 to +25 VGS,OP 3 Recommended DC operating values 5 to +20 Operating Junction Temperature A V TJ - 55 to +175 °C Storage Temperature TSTG - 55 to +150 °C Lead Temperature for Soldering TSOLD - 260 °C MD M3 or 6-32 screw Mounting Torque 1 Nm 8.8 in-lb Footnote 1: Pulse width limited by TJ,MAX Footnote 2: See Figure 21 for further information Footnote 3: MOSFET can operate with VGS(OFF) = 0 V dependent upon PCB layout. VGS(OFF) = 5 V provides added noise margin and faster turn-off speed 2. Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, junction-to-case Rth,JC,MAX 2.5 °C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,MAX 40 °C/W 3. Electrical Characteristics 3.1. Static Characteristics (T J Characteristic = 25 °C unless otherwise specified) Symbol Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate Leakage Current Typ Max VGS = 0 V, ID = 100 µA 1700 - - VDS = 1700, VGS = 0 V - 0.05 10 VDS = 1700 V, VGS = 0 V, TJ = 175 °C - 0.1 - IGSS,F VGS = 22 V, VDS = 0 V - - 100 IGSS,R VGS = 6 V, VDS = 0 V - - 100 Drain-Source On-State Resistance RDS(ON) Gate Threshold Voltage VGS(TH) Gate Resistance Value Min RG ID = 2 A, VGS = 20 V - 750 1000 ID = 2 A, VGS = 20 V, TJ = 175 °C - 1550 - VDS = VGS, ID = 1 mA 1.8 2.8 4.0 VDS = VGS, ID = 1 mA, TJ = 175 °C - 1.9 - Resonance method, Drain-Source shorted1 - 29 - Unit V µA nA V Footnote 1: For a description of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 3.2. Dynamic Characteristics (T J Characteristic = 25 °C unless otherwise specified) Value Symbol Conditions Turn-On Switching Energy EON Turn-Off Switching Energy EOFF VDD = 1200 V, ID = 2 A, VGS = -5 / +20 V, RG,ext 1.4 mH, FWD = LSIC1MO170E0750 Min Typ Max - 52 - - 61 - Total Per-Cycle Switching Energy ETS - 113 - Input Capacitance CISS - 200 - Output Capacitance COSS - 11.5 - - 1.7 - - 5.7 - - 13 - - 3.5 - - 6 - - 8 - - 12 - - 23 - - 74 - Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf VDD = 1000 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 1200 V, ID = 2 A, VGS = -5 / +20 V VDD = 1200 V, VGS = -5 / +20 V, ID = 2 A, RG,ext RL = 600 Timing relative to VDS Unit µJ pF µJ nC ns 4. Reverse Diode Characteristics Characteristic Symbol Diode Forward Voltage VSD Continuous Diode Forward Current Peak Diode Forward Current 1 IS ISP Value Conditions Min Typ Max IS = 1 A, VGS = 0 V - 3.7 - IS = 1 A, VGS = 0 V, TJ = 175 °C - 3.2 - - - 9 - - 15 VGS = 0 V, TC = 25 °C Unit V A Footnote 1: Pulse width limited by TJ,MAX 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 5. Figure Data Figure 1. Maximum Power Dissipation (TJ = 175 °C) Figure 2. Typical Transfer Characteristics 9 8 60 Drain Current, ID (A) 50 40 30 20 10 TJ = 25 °C 7 6 5 4 175 °C 3 -55 °C 2 VDS = 10 V 1 0 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 5 Case Temperature, TC (°C) Figure 3. Typical Output Characteristics (TJ = 25 °C) 20 9 8 8 VGS = 20 V 7 6 18 V 5 16 V 4 14 V Drain Current, ID (A) Drain Current, ID (A) 15 Figure 4. Typical Output Characteristics (TJ = 175 °C) 9 3 12 V 2 10 V 1 7 6 VGS = 20 V 5 18 V 16 V 4 14 V 12 V 3 10 V 2 1 0 0 0 2 4 6 8 10 0 2 Drain-Source Voltage, VDS (V) 4 6 8 10 Drain-Source Voltage, VDS (V) Figure 5. Typical Output Characteristics (TJ = -55 °C) Figure 6. Typical Reverse Conduction Characteristics (TJ = 25 °C) 9 Reverse Voltage, VSD (V) 8 Drain Current, ID (A) 10 Gate-Source Voltage, VGS (V) 7 6 5 4 3 2 1 0 0 7 VGS = 20 V 6 5 18 V 4 16 V 0.5 1 1.5 2 -5 V 0 V 3 5V 10 V 15 V 2.5 14 V 2 VGS = 20 V 12 V 1 3.5 10 V 4 0 0 2 4 6 8 3 10 Reverse Current, IS (A) Power Dissipation, PD (W) 70 4.5 Drain-Source Voltage, VDS (V) 5 5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet Figure 7. Typical Reverse Conduction Characteristics (TJ = 175 °C) Figure 8. Typical Reverse Conduction Characteristics (TJ = -55 °C) 5 4 3 Reverse Voltage, VSD (V) 2 1 0 7 15 V 3.5 1.5 2 -5 V 5V 3 3.5 4 4.5 4.5 5 5 Figure 10. Maximum Safe Operating Area (TC = 25 °C) 10 0.1 0.05 0.02 0.01 Single Pulse Pulse 10 µs 1 100 µs 1 ms 0.1 100 ms (Single Pulse) 1E-3 1E-06 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0.1 1 Pulse Width (s) 10 100 1000 10000 Drain-Source Voltage, VDS (V) Figure 11. Typical On-resistance vs. Drain Current Figure 12. Normalized On-resistance vs. Junction Temperature 2.5 Normalized On-resistance, RDS(ON) 3500 On-resistance, RDS(ON) (mOhm) 10 V 15 V VGS = 20 V Drain Current, ID (A) Thermal Impedance, Zth,JC (°C/W) 0V 2.5 Duty = 0.5 0.3 1E-2 0 1 Figure 9. Transient Thermal Impedance 1E-1 1 0.5 4 1E+0 2 1 3 5V 3 0 2.5 10 V 4 0.5 2 VGS = 20 V 5 0 1.5 -5 V 0 V 6 Reverse Current, IS (A) 6 Reverse Current, IS (A) Reverse Voltage, VSD (V) 7 3000 2500 TJ = 175 °C 2000 -55 °C 1500 1000 25 °C 500 (VGS = 20 V) 0 2 1.5 1 0.5 (VGS = 20 V, ID = 2 A) 0 0 2 4 6 8 -75 Drain Current, ID (A) -50 -25 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) 6 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet Figure 13. Typical On-resistance vs. Junction Temperature Figure 14. Typical Threshold Voltage 4.5 1600 Threshold Voltage, VGS(TH) (V) On-resistance, RDS(ON) (mOhm) 1800 1400 1200 16 V 1000 18 V 800 20 V 600 Conditions: ID = 2 A VGS traces labeled 400 200 0 4 3.5 3 2.5 2 1.5 1 0.5 (ID = 1 mA, VDS = VGS) 0 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) Figure 15. Typical Junction Capacitances up to 1000 V Figure 16. Typical Junction Capacitances up to 200 V 1000 1000 CISS Capacitance (pF) Capacitance (pF) CISS 100 COSS 10 100 COSS 10 CRSS CRSS (f = 1 MHz) 1 0 200 (f = 1 MHz) 1 400 600 800 1000 0 50 Drain-Source Voltage, VDS (V) Figure 17. Typical COSS Stored Energy EOSS 150 200 Figure 18. Typical Gate Charge 7 20 Gate-Source Voltage, VGS (V) 6 Stored Energy, EOSS (µJ) 100 Drain-Source Voltage, VDS (V) 5 4 3 2 1 15 10 5 0 (VDD = 1200 V, ID = 2 A) 0 -5 0 200 400 600 800 1000 0 Drain-Source Voltage, VDS (V) 2 4 6 8 10 12 14 Gate Charge, QG (nC) 7 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet Figure 20. Typical Switching Energy vs. External Gate Resistance Figure 19. Typical Switching Energy vs. Drain Current 250 VDD = 1200 V RG,ext = 2 Ohm VGS = -5/+20 V FWD = LSIC1MO170E0750 L = 1.4 mH TJ = 25 °C 200 Switching Energy, ESW (µJ) Switching Energy, ESW (µJ) 250 Etot 150 Eon 100 Eoff 50 VDD = 1200 V ID = 2 A VGS = -5/+20 V FWD = LSIC1MO170E0750 L = 1.4 mH TJ = 25 °C 200 Etot 150 Eon 100 Eoff 50 0 0 0 1 2 3 4 5 0 6 10 20 30 40 50 60 External Gate Resistance, RG,ext (Ohm) Drain Current, ID (A) Figure 21. VGS Waveform Definitions +25 V ttransient +22 V 0V ttransient -6 V -10 V 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 6. Package Dimensions Symbol Millimeters Min Nom Max A 4.699 - 5.309 A1 2.210 - 2.591 A2 1.499 - 2.489 b 0.990 - 1.400 b2 1.650 - 2.390 b4 2.590 - 3.430 c 0.380 - 0.890 21.463 D 20.800 - D1 13.081 - - D2 0.508 - 1.350 e Recommended Hole Pattern Layout: Notes: 1. Dimensions are in millimeters 2. Dimensions D & E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extreme of the plastic body. 5.440 BSC E 15.494 - 16.256 E1 13.060 - 14.150 E2 3.429 - 5.486 L 19.810 - 20.570 L1 3.810 - 4.496 øP 3.550 - 3.660 øP1 7.060 - 7.390 Q 5.385 - 6.200 S 6.050 - 6.300 3. øP to have a maximum draft angle of 1.7° to the top of the part with a maximum hole diameter of 3.912 mm. 7. Part Numbering and Marking SiC = SiC 1 = Gen 1 MO = MOSFET 170 = Voltage Rating (1700 V) E = TO-247-3L 0750 = RDS(ON) (750 mOhm) YY = Year WW = Week D = Special Code ZZZZZZ-ZZ = Lot Number 8. Packing Options 9 Part Number Marking LSIC1MO170E0750 SIC1MO170E0750 Packing Mode Tube (30 Pcs) M.O.Q. 450 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO170E0750 Silicon Carbide MOSFET Datasheet 9. Packing Specifications For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 10 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020