找到HIRF840F相关的规格书共1,092
型号厂商描述数据手册替代料参考价格
N25Q128A41TF840FNUMONYX[NumonyxB.V] N25Q128A41TF840F - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A41BF840FNUMONYX[NumonyxB.V] N25Q128A41BF840F - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A31TF840GNUMONYX[NumonyxB.V] N25Q128A31TF840G - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A31BF840GNUMONYX[NumonyxB.V] N25Q128A31BF840G - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A21TF840GNUMONYX[NumonyxB.V] N25Q128A21TF840G - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A21TF840FNUMONYX[NumonyxB.V] N25Q128A21TF840F - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A21BF840ENUMONYX[NumonyxB.V] N25Q128A21BF840E - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A11TF840GNUMONYX[NumonyxB.V] N25Q128A11TF840G - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
N25Q128A11EF840GNUMONYX[NumonyxB.V] N25Q128A11EF840G - 128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface - Numonyx B.V获取价格
HSS2N15HUASHUO SEMICONDUCTOR类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):1.8A;功率(Pd):1.3W;导通电阻(RDS(on)@Vgs,Id):240mΩ@10V,2A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):18nC@10V;输入电容(Ciss@Vds):840pF@75V;反向传输电容(Crss@Vds):25pF@75V;工作温度:-55℃~+150℃@(Tj);获取价格
HL20N04HL类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):20A;功率(Pd):38W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,20A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):20nC@10V;输入电容(Ciss@Vds):840pF@25V;反向传输电容(Crss@Vds):60pF@25V;工作温度:-55℃~+175℃@(Tj);获取价格
FCP600N60ZMurata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):7.4A;功率(Pd):89W;导通电阻(RDS(on)@Vgs,Id):510mΩ@10V,3.7A;阈值电压(Vgs(th)@Id):3.5V@250uA;栅极电荷(Qg@Vgs):20nC@10V;输入电容(Ciss@Vds):840pF@25V;反向传输电容(Crss@Vds):30pF@25V;工作温度:-55℃~+150℃@(Tj);获取价格