IXBF20N360

Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE(sat)  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3600 V VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 45 A IC110 TC = 110°C 18 A ICM TC = 25°C, 1ms 220 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 160 VCES  1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive PC TC 1 5 1 = Gate 2 = Emitter μs 230 W -55 ... +150 °C  TJM 150 °C  Tstg -55 ... +150 °C  300 260 °C °C 20..120 / 4.5..27 N/lb 4000 V~ 8 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force with Clip VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BV CES IC = 250μA, VGE = 0V 3600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 3000V, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(SAT) IC © 2013 IXYS CORPORATION, All Rights Reserved Isolated Tab 5 = Collector Features 10 = 20A, VGE = 15V, Note 1 TJ = 125°C 2 2.9 3.6  Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages   Low Gate Drive Requirement High Power Density Applications  V 125  5.0 V 25 μA μA ±200 nA 3.4 V V Switch-Mode and Resonant-Mode Power Supplies  Uninterruptible Power Supplies (UPS)  Laser Generators  Capacitor Discharge Circuits  AC Switches DS100567A(12/13) IXBF20N360 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 1000V td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff td(on) tr td(off) tf td(on) tr td(off) tf Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 1500V, RG = 10 Note 3 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 1500V, RG = 10 Note 3 Resistive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 960V, RG = 10 Resistive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 960V, RG = 10 RthJC RthCS ISOPLUS i4-PakTM (HV) Outline 17 S 2045 110 50 pF pF pF 110 13 43 nC nC nC 18 14 15.50 238 206 4.30 ns ns mJ ns ns mJ 20 22 16.10 247 216 4.15 ns ns mJ ns ns mJ 30 325 ns ns 165 1045 ns ns 32 890 ns ns 185 1100 ns ns 0.54 °C/W °C/W 0.15 PRELIMANARYTECHNICAL INFORMATION Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 20A, VGE = 0V, Note 1 trr IF = 10A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Notes: Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated 3.5 VR = 100V, VGE = 0V V 1.7 μs 35 A 30 μC The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF20N360 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 40 VGE = 25V 19V 15V 13V 11V 35 17V 200 9V 25 I C - Amperes I C - Amperes 30 VGE = 25V 21V 19V 240 20 15 7V 15V 160 13V 120 11V 80 10 9V 40 5 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 7V 0 4.5 0 5 10 15 VCE - Volts 40 1.6 30 VGE = 15V 1.5 9V VCE(sat) - Normalized I C - Amperes 1.7 VGE = 25V 21V 17V 15V 13V 11V 30 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 35 20 VCE - Volts 25 20 7V 15 1.4 I C = 40A 1.3 1.2 I C = 20A 1.1 1.0 10 I C = 10A 0.9 6V 5 0.8 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.7 5.5 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 60 50 6 40 I C - Amperes VCE - Volts TJ = 25ºC 7 5 I C = 40A 4 20 20A 3 30 TJ =125ºC 25ºC - 40ºC 10 10A 0 2 6 7 8 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXBF20N360 Fig. 8. Gate Charge Fig. 7. Transconductance 16 30 TJ = - 40ºC VCE = 1000V 14 25 I C = 20A I G = 10mA VGE - Volts g f s - Siemens 12 25ºC 20 125ºC 15 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 0 10 20 30 I C - Amperes 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 10,000 60 f = 1 MHz TJ = 25ºC 125ºC Capacitance - PicoFarads J 50 I F - Amperes 40 30 VGE = 0V 20 C ies 1,000 C oes 100 VGE = 15V 10 Cres 0 10 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 180 160 140 Z (th)JC - ºC / W I C - Amperes 120 100 80 60 40 TJ = 125ºC 20 RG = 10Ω dv / dt < 10V / ns 0 200 600 1000 1400 1800 2200 2600 3000 3400 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF20N360 Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 I C - Amperes I C - Amperes 100 10 25µs 100µs 1 1ms 10 25µs 100µs 1 1ms TJ = 150ºC 0.1 Single Pulse DC 0.01 1 TJ = 150ºC 0.1 TC = 25ºC 10 100 10ms TC = 75ºC 100ms Single Pulse 0.01 1,000 10,000 1 10 100 VCE - Volts Eoff 16 Eon - --- 42 Eoff 12 8 26 6 22 4 18 I C = 20A 2 Eoff - MilliJoules E off - MilliJoules 30 14 0 10 15 20 25 30 35 40 45 40 8 6 24 TJ = 25ºC 4 16 2 8 0 50 0 10 15 20 --- 30 35 40 420 36 380 Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance tfi 900 t d(off) - - - - 800 TJ = 125ºC, VGE = 15V VCE = 1500V 28 8 24 6 700 300 600 260 500 I C = 40A I C = 20A 220 400 16 180 300 12 140 200 20 4 Eon - MilliJoules I C = 40A 10 VCE = 1500V 340 32 I C = 20A 2 0 25 35 45 55 65 75 85 95 105 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 115 8 125 100 100 10 15 20 25 30 RG - Ohms 35 40 45 50 t d(off) - Nanoseconds 12 Eoff - MilliJoules Eon - RG = 10Ω , VGE = 15V 40 t f i - Nanoseconds Eoff 25 I C - Amperes Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature 14 32 TJ = 125ºC RG - Ohms 16 48 Eon - MilliJoules 10 Eon - MilliJoules 34 I C = 40A --- VCE = 1500V 10 12 Eon - 56 TJ = 125ºC , VGE = 15V 38 VCE = 1500V 10 10,000 Fig. 16. Inductive Switching Energy Loss vs. Collector Current 14 46 TJ = 125ºC , VGE = 15V 14 1,000 VCE - Volts Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance 18 10ms 100ms DC IXBF20N360 Fig. 19. Inductive Turn-off Switching Times vs. Collector Current 400 tfi 360 t d(off) - - - - 280 400 270 360 RG = 10Ω , VGE = 15V VCE = 1500V 260 240 240 200 230 TJ = 25ºC 160 220 120 210 80 20 25 30 I C - Amperes 35 tri 100 60 60 50 t r i - Nanoseconds 40 30 I C = 20A 20 0 25 30 35 40 45 IC = 40A 75 85 95 105 115 210 125 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 34 t d(on) - - - 30 RG = 10Ω , VGE = 15V 0 18 TJ = 25ºC 14 10 10 15 20 25 30 35 40 31 22 30 19 IC = 20A 20 16 10 13 0 65 22 TJ = 125ºC 20 10 50 26 30 10 25 40 55 65 28 VCE = 1500V 45 55 75 85 95 105 115 t d(on) - Nanoseconds t r i - Nanoseconds t d(on) - - - - RG = 10Ω , VGE = 15V 35 45 I C - Amperes Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 25 35 40 20 RG - Ohms 50 220 I C = 40A t d(on) - Nanoseconds 40 t d(on) - Nanoseconds I C = 40A 60 tri 230 120 70 50 60 240 I C = 20A 25 VCE = 1500V 70 240 VCE = 1500V 80 20 250 tri t d(on) - - - - 15 280 TJ - Degrees Centigrade TJ = 125ºC, VGE = 15V 10 260 I C = 40A 40 Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance 120 VCE = 1500V 160 t r i - Nanoseconds 15 270 200 200 10 t d(off) - - - - RG = 10Ω , VGE = 15V 320 t f i - Nanoseconds 250 TJ = 125ºC tfi 280 t d(off) - Nanoseconds 280 t d(off) - Nanoseconds t f i - Nanoseconds 320 Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature 10 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_20N360(H7-B11) 10-17-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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