IXTX24N100

Power MOSFET IXTX24N100 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 24 A IDM TC = 25°C 96 A IA EAS TC = 25°C TC = 25°C 24 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 568 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 6 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Md Mounting Force Maximum Ratings Weight Tab G = Gate S = Source D = Drain Tab = Drain Features • • • • • International Standard Package Low RDS (on) HDMOSTM Process Rugged Polysilicon Gate Cell Structure Avalanche Rated Low Package Inductance Advantages • PLUS 247TM Package for Clip or Spring Mounting • Space Savings • High Power Density Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All rights reserved V 5.5 V ±100 nA • DC-DC Converters • Battery Chargers • Switch-Mode and Resonant-Mode Power Supplies • DC Choppers • AC Motor Drives • Temperature and Lighting Controls 50 μA 1 mA 400 mΩ DS99201C(09/10) IXTX24N100 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 15 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS 247TM (IXTX) Outline 27 S 8700 pF 785 pF 315 pF 35 ns 35 ns 75 ns 21 ns 267 nC 52 nC 142 nC 0.22 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, Pulse Width Limited by TJM 96 A VSD IF = 24A, VGS = 0V, Note 1 1.5 V trr IF = 24A, -di/dt = 100A/μs, VR = 100V, VGS = 0V Note 850 Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain 3 - Source Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 ns 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTX24N100 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 55 24 VGS = 10V 7V VGS = 10V 50 20 45 ID - Amperes ID - Amperes 40 16 6V 12 7V 35 30 25 20 8 6V 15 10 4 5 5V 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.8 24 VGS = 10V VGS = 10V 2.4 R DS(on) - Normalized 20 6V ID - Amperes 20 VDS - Volts VDS - Volts 16 12 8 5V 4 I D = 24A 2.0 I D = 12A 1.6 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 28 2.6 VGS = 10V 2.4 24 TJ = 125ºC 20 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 16 12 8 1.2 4 1.0 0.8 0 0 5 10 15 20 25 30 35 ID - Amperes © 2010 IXYS CORPORATION, All rights reserved 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTX24N100 Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 TJ = - 40ºC 40 50 30 25 g f s - Siemens ID - Amperes 35 TJ = 125ºC 20 25ºC 15 25ºC 40 125ºC 30 20 - 40ºC 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 VGS - Volts 30 35 40 45 50 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 70 10 VDS = 500V 9 60 I D = 12A 8 50 I G = 10mA 7 VGS - Volts IS - Amperes 25 ID - Amperes 40 30 TJ = 125ºC 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 30 60 VSD - Volts 90 120 150 180 210 240 270 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 100,000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 0.10 1,000 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N100(9X)4-14-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.