IXYP50N65C3

Preliminary Technical Information IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 26ns TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V G IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 132 50 250 A A A TO-247 AD (IXYH) IA EAS TC = 25°C TC = 25°C 25 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC G V 15 250 A A 100 nA © 2014 IXYS CORPORATION, All Rights Reserved 2.10 C (Tab) C (Tab) C = Collector Tab = Collector Features      Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Packages Advantages     6.0 1.73 2.10 E G = Gate E = Emitter   = 36A, VGE = 15V, Note 1 TJ = 150C C CE High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C IGES TO-220 (IXYP) V V       Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100552C(9/14) IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS RthCS TO-220 TO-247 Notes: TO-220 Outline 30 S 2290 135 50 pF pF pF 86 14 40 nC nC nC 20 36 0.80 90 26 0.47 ns ns mJ ns ns mJ 0.80 19 37 1.60 113 32 0.70 ns ns mJ ns ns mJ 0.50 0.21 0.25 °C/W °C/W °C/W Pins: 1 - Gate 3 - Emitter 2 - Collector TO-247 Outline 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. TO-263 Outline 1 - Gate 2,4 - Collector 3 - Emitter 1 = Gate 2 = Collector 3 = Emitter 4 = Collector PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 280 70 VGE = 15V 13V 12V 11V 60 VGE = 15V 14V 240 10V 13V 200 50 12V 40 I C (A) I C (A) 9V 30 8V 160 11V 120 10V 80 20 9V 40 7V 10 8V 7V 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 5 15 20 25 VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 70 VGE = 15V 13V 11V 60 10V 30 VGE = 15V 1.8 I C = 72A VCE(sat) - Normalized 9V 50 I C (A) 10 VCE (V) 40 8V 30 20 1.6 1.4 I C = 36A 1.2 1.0 7V 0.8 10 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I C = 18A 0.6 -50 4.0 -25 0 25 VCE - Volts 75 100 125 150 175 TJ (ºC) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 50 Fig. 6. Input Admittance 100 90 TJ = 25ºC 4.5 80 4.0 70 60 I C (A) VCE (V) 3.5 I C = 72A 3.0 50 40 2.5 TJ = 150ºC 25ºC 30 - 40ºC 36A 2.0 20 1.5 10 18A 0 1.0 7 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE (V) 8 9 10 IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 45 TJ = - 40ºC 40 VCE = 325V 14 I C = 36A 35 12 150ºC 10 V GE (V) g f s (S) 30 25ºC 25 20 I G = 10mA 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 I C (A) QG (nC) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 80 90 10,000 f = 1 MHz 100 80 1,000 I C (A) Capacitance (pF) Cies Coes 60 40 100 TJ = 150ºC 20 Cres 10 RG = 5Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 VCE (V) 200 300 400 500 600 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 700 VCE (V) 1 Fig. 12. Maximum Transient Thermal Impedance 1000 aasss 0.4 VCE(sat) Limit 25µs 10 100µs Z (th)JC - ºC / W I D - Amperes 100 0.1 1ms 1 TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.2 Eoff 2.8 Eon - 2.4 8 --- Eoff 7 2.0 TJ = 150ºC , VGE = 15V VCE = 400V 5 VCE = 400V 1.6 4 1.2 3 1.6 4 1.2 3 0.8 2 E off (mJ) 5 I C = 72A TJ = 150ºC 0.8 2 0.4 I C = 36A 0.4 ---- Eon (mJ) 2.0 Eon 6 RG = 5Ω , VGE = 15V 6 E on (mJ) E off (mJ) 2.4 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1 1 TJ = 25ºC 0.0 2.8 10 15 25 30 35 40 45 50 20 25 30 35 40 Eon ---- 7 120 6 100 60 65 0.8 2 td(off) - - - - 320 I C = 72A 60 240 I C = 36A 0.0 25 50 75 100 80 0 0 150 125 0 5 10 15 20 25 30 35 40 45 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 180 100 RG = 5Ω , VGE = 15V VCE = 400V Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 120 200 td(off) - - - - 140 40 100 30 80 TJ = 25ºC 60 10 40 25 30 35 40 45 50 55 60 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 65 70 75 t f i (ns) t f i (ns) 20 120 I C = 72A 60 40 100 80 I C = 36A 20 60 0 25 50 75 100 TJ (ºC) 125 40 150 t d(off) (ns) 120 TJ = 150ºC t d(off) (ns) 140 160 VCE = 400V 80 60 20 55 td(off) - - - - RG = 5Ω , VGE = 15V 160 50 50 RG (Ω) TJ (ºC) tfi 160 20 1 I C = 36A 400 TJ = 150ºC, VGE = 15V 40 0.4 480 t d(off) (ns) 3 tfi 75 80 E on (mJ) 4 1.2 15 70 VCE = 400V 5 I C = 72A 70 55 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 1.6 80 50 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature VCE = 400V 90 45 I C (A) RG = 5Ω , VGE = 15V 2.0 0 15 55 RG (Ω) Eoff 2.4 20 t f i (ns) 5 Eoff (mJ) 0.0 0 IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 80 VCE = 400V I C = 36A 60 t r i (ns) t r i (ns) 40 20 20 10 60 22 TJ = 25ºC 40 30 40 25 19 TJ = 150ºC 20 0 0 5 10 15 20 25 30 35 40 45 50 16 0 55 13 15 20 25 30 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 22 60 21 40 20 I C = 36A 50 60 65 70 75 70 19 0 25 55 80 23 I C = 72A 20 50 90 24 VCE = 400V 80 45 Fig. 22. Maximum Peak Load Current vs. Frequency t d(on) - Nanoseconds t r i (ns) td(on) - - - - RG = 5Ω , VGE = 15V 100 40 100 25 I C (A) tri 120 35 I C (A) RG (Ω) 140 t d(on) (ns) 80 28 VCE = 400V t d(on) (ns) 50 td(on) - - - - 80 60 I C = 72A 31 RG = 5Ω , VGE = 15V 70 120 100 tri 100 TJ = 150ºC, VGE = 15V 140 120 90 td(on) - - - - Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 75 100 125 18 150 TJ (ºC) 60 50 Triangular Wave TJ = 150ºC TC = 75ºC 40 VCE = 400V 30 VGE = 15V 20 RG = 5Ω Duty Cycle = 0.5 Square Wave 10 10 100 1000 fmax (kH) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N65C3D1(5D) 9-03-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.