找到“KBPC1000GW”相关的规格书共34,207个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| NAND04GW3B4CN6E | NUMONYX[NumonyxB.V] | NAND04GW3B4CN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GW3B2BN1F | NUMONYX[NumonyxB.V] | NAND04GW3B2BN1F - 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories - Numonyx B.V | 获取价格 | ||
| NAND04GW3B2AN6F | NUMONYX[NumonyxB.V] | NAND04GW3B2AN6F - 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories - Numonyx B.V | 获取价格 | ||
| NAND02GW4B2CZA1E | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2CZA1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW4B2C | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2C - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW4B2BZB1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2BZB1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW4B2BZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2BZA6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW4B2BN1F | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2BN1F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW4B2AZA1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GW4B2AZA1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW3B2AZA1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GW3B2AZA1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GW3B2AN1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GW3B2AN1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2CZA6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2CZA6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2CN6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2CN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2BN6F | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2BN6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2BN6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2BN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| MZ5004GW | FREESCALE[FreescaleSemiconductor,Inc] | MZ5004GW - Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated - Freescale Semiconductor, Inc | 获取价格 | ||
| GW35NB60SD | STMICROELECTRONICS[STMicroelectronics] | GW35NB60SD - N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT - STMicroelectronics | 获取价格 | ||
| GW30NC120HD | STMICROELECTRONICS[STMicroelectronics] | GW30NC120HD - N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT - STMicroelectronics | 获取价格 | ||
| MPVZ4006GW7U | FREESCALE[FreescaleSemiconductor,Inc] | MPVZ4006GW7U - Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated - Freescale Semiconductor, Inc | 获取价格 |
