找到“MJ11014”相关的规格书共348个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| D38999--24MJ11PN | Amphenol Corporation | AMPHENOL AEROSPACE - D38999/24MJ11PN - Circular Connector, MIL-DTL-38999 Series III, Jam Nut Receptacle, 11 Contacts, Crimp Pin, Threaded | 获取价格 | ||
| D38999--24MJ35SA | Amphenol Corporation | AMPHENOL AEROSPACE - D38999/24MJ35SA - Circular Connector, MIL-DTL-38999 Series III, Jam Nut Receptacle, 128 Contacts, Crimp Socket | 获取价格 | ||
| FGH60T65SQD-F155 | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):333W;集射极击穿电压(Vces):650V;集电极电流(Ic):120A;集电极脉冲电流(Icm):240A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.227mJ;关断损耗(Eoff):0.1mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGA25N120ANTDTU-F109 | Murata Manufacturing Co., Ltd. | IGBT类型:-;功率(Pd):312W;集射极击穿电压(Vces):1200V;集电极电流(Ic):50A;集电极脉冲电流(Icm):90A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):4.1mJ;关断损耗(Eoff):0.96mJ;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| AFGY100T65SPD | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):660W;集射极击穿电压(Vces):650V;集电极电流(Ic):120A;集电极脉冲电流(Icm):300A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):5.1mJ;关断损耗(Eoff):2.7mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGA30T65SHD | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):238W;集射极击穿电压(Vces):650V;集电极电流(Ic):60A;集电极脉冲电流(Icm):90A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.598mJ;关断损耗(Eoff):0.167mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGA30N60LSDTU | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):480W;集射极击穿电压(Vces):600V;集电极电流(Ic):60A;集电极脉冲电流(Icm):90A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):1.1mJ;关断损耗(Eoff):21mJ;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| AFGHL40T65SPD | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):267W;集射极击穿电压(Vces):650V;集电极电流(Ic):80A;集电极脉冲电流(Icm):120A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):1.16mJ;关断损耗(Eoff):0.27mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 |
