FCH099N60E

MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 37 A, 99 mW FCH099N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy−drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the ”E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series. VDS RDS(ON) MAX ID MAX 600 V 99 mW @ 10 V 37 A D G Features • • • • • • www.onsemi.com Typ. RDS(on) = 87 mW 650 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 88 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S N-CHANNEL MOSFET S D G Applications • Telecom / Sever Power Supplies • Industrial Power Supplies TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 099N60E $Y &Z &3 &K FCH099N60E = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 December, 2019 − Rev. 2 1 Publication Order Number: FCH099N60E/D FCH099N60E ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current: FCH099N60E Unit 600 V − DC ±20 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 37 − Continuous (TC = 100°C) 24 IDM Drain Current: 111 A EAS Single Pulsed Avalanche Energy (Note 2) 809 mJ IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 357 W − Derate Above 25°C 2.85 W/°C −55 to + 150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 6.8 A, RG = 25 W, Starting TJ = 25 °C. 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, Starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH099N60E FCH099N60E TO−247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. FCH099N60E Unit 0.35 °C/W 40 www.onsemi.com 2 FCH099N60E ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit ID = 10 mA, VGS = 0 V, TJ = 25°C 600 − − V ID = 10 mA, VGS = 0 V, TJ = 150°C 650 − − OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C − 0.7 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V − − 1 mA VDS = 480 V, VGS = 0 V, TC = 125 °C − 2.1 − VGS = ±20 V, VDS = 0 V − − ±100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA 2.5 − 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18.5 A − 87 99 mW Forward Transconductance VDS = 20 V, ID = 18.5 A − 31.4 − S VDS = 380 V, VGS = 0 V, f = 1 MHz − 2604 3465 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 75 100 pF Crss Reverse Transfer Capacitance − 13.9 20 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V − 309 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 18.5 A, VGS = 10 V (Note 4) − 88 114 nC − 12 − nC − 38 − nC f = 1 MHz − 0.6 − W VDD = 380 V, ID = 18.5 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 24 58 ns − 23 56 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 92 194 ns Turn−Off Fall Time − 22 54 ns tf DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current − − 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 111 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18.5 A − − 1.2 V trr Reverse Recovery Time − 387 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18.5 A, dIF/dt = 100 A/ms − 7.3 − mC IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 3 FCH099N60E TYPICAL CHARACTERISTICS 200 VGS 15.0 V 10.0 V 8.0 V 6.0 V 5.5 V 5.0 V 4.5 V 10 *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 100 ID, Drain Current [A] ID, Drain Current [A] 100 10 o 150 C o 25 C 1 o −55 C *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 0.1 1 VDS, Drain−Source Voltage[V] 10 0.1 20 2 6 4 5 3 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.20 200 IS, Reverse Drain Current [A] RDS(on) [W], Drain−Source On−Resistance 100 0.16 VGS = 10V 0.12 VGS = 20V 0.08 o 150 C o 10 25 C *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test o 0.04 *Note: T C = 25 C 0 20 40 60 80 ID, Drain Current [A] 100 1 0.2 120 0.8 0.6 1.0 1.2 0.4 VSD, Body Diode Forward Voltage [V] 1.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10 100000 Capacitances [pF] 10000 VGS, Gate−Source Voltage [V] VDS = 120V Ciss 1000 Coss 100 *Notes: 1. VGS = 0 V 2. f = 1 MHz 10 Crss Ciss = Cgs + Cgd(Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.3 0.1 1 10 100 VDS, Drain−Source Voltage [V] VDS = 480V 6 4 2 0 600 VDS = 300V 8 *Note: I D = 18.5A 0 36 54 72 18 Q g , Total Gate Charge [nC] 90 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH099N60E TYPICAL CHARACTERISTICS 3.0 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.1 RDS(on) , [Normalized] Drain−Source On−Resistance BV DSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −100 −50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 −100 200 Figure 7. Breakdown Voltage Variation vs. Temperature 10m s 30 100m s ID, Drain Current [A] ID, Drain Current [A] 200 40 100 1ms 10ms DC 10 Operation in This Area is Limited by RDS(on) *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 1 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] 12 8 4 100 200 300 400 500 VDS, Drain to Source Voltage [V] 10 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 16 0 20 0 25 1000 Figure 9. Maximum Safe Operating Area Eoss, [mJ ] −50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 8. On−Resistance Variation vs. Temperature 300 0 *Notes: 1. VGS = 10 V 2. ID = 18.5 A 0.5 600 Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCH099N60E TYPICAL CHARACTERISTICS ZqJC(t), Thermal Response [°C/W] 0.5 0.5 0.1 0.2 0.1 0.05 P DM 0.02 t1 0.01 0.01 Single pulse 0.001 −5 10 t 2 *Notes: 1. ZqJC(t) = 0.35°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) −4 10 −3 −2 −1 10 10 10 t 1, Rectangular Pulse Duration [sec] 0 10 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 FCH099N60E VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH099N60E + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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