FGHL40T65MQDT

Field Stop Trench IGBT 650 V, 40 A FGHL40T65MQDT Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • • • • • • • • www.onsemi.com Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Smooth and Optimized Switching Tight Parameter Distribution RoHS Compliant Typical Applications 40 A, 650 V VCESat = 1.45 V C G • Solar Inverter • UPS, ESS • PFC, Converters E MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V IC 60 40 A Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A IF 60 40 A Pulsed Diode Maximum Forward Current IFM 160 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 238 119 W Operating Junction and Storage Temperature Range TJ, TSTG −55 to +175 °C TL 260 °C Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 160 A, Inductive Load, 100% tested 3. Repetitive rating: pulse width limited by max. junction temperature G C E TO−247−3L CASE 340CX MARKING DIAGRAM $Y&Z&3&K FGHL 40T65MQDT $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code FGHL40T65MQDT = Specific Device Code ORDERING INFORMATION Device FGHL40T65MQDT © Semiconductor Components Industries, LLC, 2020 April, 2020 − Rev. 0 1 Package Shipping TO−247−3L 30 Units / Tube Publication Order Number: FGHL40T65MQDT/D FGHL40T65MQDT THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance Junction−to−case, for IGBT Rating RqJC 0.63 °C/W Thermal Resistance Junction−to−case, for Diode RqJC 0.91 °C/W Thermal Resistance Junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector to Emitter Cut−off Current VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 40 mA VGE(th) 3.0 4.5 6.0 V VGE = 15 V, IC = 40 A, TJ = 25°C VGE = 15 V, IC = 40 A, TJ = 175°C VCE(sat) − − 1.45 1.65 1.8 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 2680 − pF Coes − 80 − Cres − 9 − ON CHARACTERISTICS Gate to Emitter Threshold Voltage Collector to Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Total VCE = 400 V, IC = 40 A, VGE = 15 V Qg − 80 − Qge − 16 − Qgc − 19 − td(on) − 16 − tr − 10 − td(off) − 82 − tf − 51 − Turn−on Switching Loss Eon − 0.35 − Turn−off Switching Loss Eoff − 0.25 − Total Switching Loss Ets − 0.60 − td(on) − 18 − Gate to Emitter Charge Gate to Collector Charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Delay Time Rise Time TJ = 25°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V TJ = 25°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V tr − 22 − td(off) − 75 − tf − 38 − Turn−on Switching Loss Eon − 0.88 − Turn−off Switching Loss Eoff − 0.49 − Total Switching Loss Ets − 1.36 − Turn−off Delay Time Fall Time www.onsemi.com 2 ns mJ ns mJ FGHL40T65MQDT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 16 − ns tr − 11 − td(off) − 93 − tf − 88 − Turn−on switching loss Eon − 0.64 − Turn−off switching loss Eoff − 0.49 − Total switching loss Ets − 1.13 − td(on) − 16 − tr − 26 − td(off) − 85 − tf − 75 − Turn−on switching loss Eon − 1.31 − Turn−off switching loss Eoff − 0.90 − Total switching loss Ets − 2.21 − VF − 1.7 2.15 − 1.65 − Erec − 54 − mJ Trr − 42 − ns Qrr − 329 − nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TJ = 175°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V TJ = 175°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V mJ ns mJ DIODE CHARACTERISTICS Diode Forward Voltage IF = 40 A, TJ = 25°C IF = 40 A, TJ = 175°C V DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Reverse Recovery Energy Diode Reverse Recovery Time TJ = 25°C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/ms Diode Reverse Recovery Charge Diode Reverse Recovery Current Irr − 15 − A Erec − 121 − mJ Trr − 86 − ns Diode Reverse Recovery Charge Qrr − 665 − nC Diode Reverse Recovery Current Irr − 15 − A Erec − 360 − mJ Reverse Recovery Energy Diode Reverse Recovery Time Reverse Recovery Energy Diode Reverse Recovery Time TJ = 25°C, VCE = 400 V, IF = 40 A, diF/dt = 1000 A/ms TJ = 175°C, VCE = 400 V, IF = 20 A, diF/dt = 1000 A/ms Trr − 104 − ns Diode Reverse Recovery Charge Qrr − 1379 − nC Diode Reverse Recovery Current Irr − 27 − A Erec − 519 − mJ Trr − 141 − ns Diode Reverse Recovery Charge Qrr − 1877 − nC Diode Reverse Recovery Current Irr − 26 − A Reverse Recovery Energy Diode Reverse Recovery Time TJ = 175°C, VCE = 400 V, IF = 40 A, diF/dt = 1000 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGHL40T65MQDT TYPICAL CHARACTERISTICS 15 V 12 V 120 160 TJ = 25°C 20 V IC, Collector Current (A) IC, Collector Current (A) 160 VGE = 8 V 10 V 80 40 0 0 1 2 3 4 15 V 12 V 10 V VGE = 8 V 80 40 0 1 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) IC, Collector Current (A) 80 80 40 0 0 1 2 3 4 60 20 0 5 0 2 8 10 Figure 4. Typical Transfer Characteristics 80 A 40 A 1.5 Cies 1000 C, Capacitance (pF) VCE(Sat), Collector−Emitter Saturation (V) 6 10000 2.0 100 Coes 10 IC = 20 A 0 4 VGE, Gate−Emitter Voltage (V) Common Emitter VGE = 15 V −50 5 40 Figure 3. Typical Saturation Voltage Characteristics 1.0 −100 4 Common Emitter VCE = 15 V TJ = 25°C TJ = 175°C VCE, Collector−Emitter Voltage (V) 2.5 3 Figure 2. Typical Output Characteristics (TJ = 1755C) Common Emitter VGE = 15 V TJ = 25°C TJ = 175°C 120 2 VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics (TJ = 255C) 160 20 V 120 0 5 TJ = 175°C 50 100 150 1 200 Cres Common Emitter VGE = 0 V, f = 1 MHz 1 10 VCE, Collector−Emitter Voltage (V) TJ, Junction Temperature (°C) Figure 6. Capacitance Characteristics Figure 5. Saturation Voltage vs. Junction Temperature www.onsemi.com 4 30 FGHL40T65MQDT TYPICAL CHARACTERISTICS (continued) 12 1000 VCC = 200 V Common Emitter IC = 40 A 300 V IC, Collector Current (A) VGE, Gate−Emitter Voltage (V) 15 400 V 9 6 3 0 0 20 40 60 80 100 ms DC 1 ms 10 ms 10 *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 0.1 100 10 ms 100 1 10 Qg, Gate Charge (nC) Figure 8. SOA Characteristics 100 Switching Time (ns) Switching Time (ns) 1000 tr Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TJ = 25°C TJ = 175°C td(on) 0 10 20 30 40 td(off) 100 10 50 0 10 Switching Time (ns) Switching Time (ns) 500 tr td(on) 10 0 20 40 60 80 30 40 50 Figure 10. Turn−off Characteristics vs. Gate Resistance Common Emitter VCC = 400 V, VGE = 15 V RG = 6 W TJ = 25°C TJ = 175°C 100 20 Rg, Gate Resistance (W) Figure 9. Turn−on Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TJ = 25°C TJ = 175°C tf Rg, Gate Resistance (W) 1 1000 VCE, Collector−Emitter Voltage (V) Figure 7. Gate Charge Characteristics 10 100 100 tf 100 td(off) 10 120 Common Emitter VCC = 400 V, VGE = 15 V RG = 6 W TJ = 25°C TJ = 175°C 0 20 40 60 80 100 120 IC, Collector Current (A) IC, Collector Current (A) Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current www.onsemi.com 5 FGHL40T65MQDT TYPICAL CHARACTERISTICS (continued) Common Emitter VCC = 400 V, VGE = 15 V IC = 40 A TJ = 25°C TJ = 175°C 10 Eon Switching Loss (mJ) Switching Loss (mJ) 10 1 Eoff 0.1 0 10 20 30 40 Eon 1 Eoff 0.1 50 Common Emitter VCC = 400 V, VGE = 15 V RG = 6 W TJ = 25°C TJ = 175°C 0 20 40 Irr, Reverse Recovery Current (A) IF, Forward Current (A) 30 80 40 0 0 1 2 3 4 25 15 10 5 0 400 5 2500 VR = 400 V IF = 40 A TJ = 25°C TJ = 175°C Qrr, Reverse Recovery Charge (nC) trr, Reverse Recovery Time (ns) 800 1000 Figure 16. Reverse Recovery Current VR = 400 V IF = 40 A TJ = 25°C TJ = 175°C 2000 150 1500 100 1000 50 0 400 600 diF/dt, Diode Current Slop (A/ms) Figure 15. Forward Characteristics 200 VR = 400 V IF = 40 A TJ = 25°C TJ = 175°C 20 VF, Forward Voltage (V) 250 100 Figure 14. Switching Loss vs. Collector Current Common Emitter TJ = 25°C TJ = 175°C 120 80 IC, Collector Current (A) Rg, Gate Resistance (W) Figure 13. Switching Loss vs. Gate Resistance 160 60 600 800 500 0 400 1000 diF/dt, Diode Current Slop (A/ms) 600 800 diF/dt, Diode Current Slop (A/ms) Figure 17. Reverse Recovery Time Figure 18. Stored Charge www.onsemi.com 6 1000 120 FGHL40T65MQDT TYPICAL CHARACTERISTICS (continued) 1 0.5 Zthjc, Thermal Response (K/W) 0.2 0.1 PDM 0.1 t1 0.05 0.02 0.01 0.01 0.001 t2 Duty Factor, D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc R1 R2 C1 = t1 / R1 C2 = t2 / R2 Single Pulse i: 1 2 3 4 ri [K/W]: 0.0145 0.1674 0.2176 0.1825 t [s]: 1.504E−5 9.670E−5 2.799E−3 1.724E−2 0.0001 10−6 10−5 10−4 10−3 10−2 10−1 100 101 Rectangular Pulse Duration (s) Figure 19. Transient Thermal Impedance of IGBT Zthjc, Thermal Response (K/W) 1 0.5 PDM 0.2 0.1 t1 0.1 0.05 0.02 0.01 0.001 0.0001 10−6 t2 Duty Factor, D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc R1 0.01 C1 = t1 / R1 C2 = t2 / R2 Single Pulse 10−5 R2 i: 1 2 3 4 ri [K/W]: 0.0227 0.2340 0.3027 0.1592 t [s]: 3.003E−5 1.348E−4 2.815E−3 1.701E−2 10−4 10−3 10−2 10−1 Rectangular Pulse Duration (s) Figure 20. Transient Thermal Impedance of Diode www.onsemi.com 7 100 101 FGHL40T65MQDT PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A www.onsemi.com 8 FGHL40T65MQDT ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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