FGHL50T65SQDT

IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com 50 A, 650 V VCESat = 1.47 V (Typ.) Features • • • • • • • • • Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant C G E Typical Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC Table 1. MAXIMUM RATING Symbol Rating Value Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage Transient Gate to Emitter Voltage ±20 ±30 V IC Collector Current 100 50 A ILM Pulsed Collector Current (Note 1) 200 A ICM Pulsed Collector Current (Note 2) 200 A Diode Forward Current 75 50 A IF @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C IFM Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation @ TC = 25°C @ TC = 100°C 268 134 W TJ, TSTG TL Operating Junction / Storage Temperature −55 to +175 Range °C Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5 seconds °C 265 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 W, Inductive Load, 100% Tested 2. Repetitive rating: pulse width limited by max. Junction temperature TO−247−3LD CASE 340CX MARKING DIAGRAM ON AYWWZZ FGHL50T65 SQDT FGHL50T65SQDT A Y WW ZZ ORDERING INFORMATION Device This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2020 February, 2020 − Rev. P0 1 = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Number FGHL50T65SQDT Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: FGHL50T65SQDT/D FGHL50T65SQDT THERMAL CHARACTERISTICS Symbol Value Unit RqJC Thermal Resistance, Junction to Case, for IGBT Rating 0.56 °C/W RqJC Thermal Resistance, Junction to Case, Max for Diode 0.65 °C/W RqJA Thermal Resistance, Junction to Ambient, Max 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVCES Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA 650 − − V DBV CES Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C ICES Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = VCES − − 250 mA IGES Gate leakage current, collector−emitter short−circuited VGE = VGES, VCE = 0 V − − ±400 nA 2.6 4.5 6.4 V DT j ON CHARACTERISTICS VGE(th) Gate−emitter threshold voltage VGE = VCE, IC = 50 mA VCE(sat) Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, Tc = 175°C − − 1.47 1.7 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 3081 − pF DYNAMIC CHARACTERISTICS Cies Input capacitance Coes Output capacitance − 136 − Cres Reverse transfer capacitance − 10.8 − − 22.8 − − 5.20 − − 70 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD td(on) tr td(off) tf Turn−on delay time Rise time Turn−off delay time TC = 25°C VCC = 400 V, IC = 12.5 A Rg = 4.7 W VGE = 15 V Inductive Load Fall time − 27.20 − Eon Turn−on switching loss − 223 − Eoff Turn−off switching loss − 91.13 − Ets Total switching loss − 314.13 − td(on) Turn−on delay time − 23.60 − − 10.40 − tr td(off) Rise time − 66.40 − Fall time − 10.20 − Eon Turn−on switching loss − 515.60 − Eoff Turn−off switching loss − 133 − Ets Total switching loss − 648.60 − tf Turn−off delay time TC = 25°C VCC = 400 V, IC = 25 A Rg = 4.7 W VGE = 15 V Inductive Load www.onsemi.com 2 ns mJ ns mJ FGHL50T65SQDT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit − 23.60 − ns − 7.20 − − 87 − Fall time − 72 − Eon Turn−on switching loss − 259.20 − Eoff Turn−off switching loss − 221 − Ets Total switching loss − 480.20 − td(on) Turn−on delay time − 25.60 − − 14.80 − − 78 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD td(on) tr td(off) tf tr td(off) tf Turn−on delay time Rise time Turn−off delay time Rise time Turn−off delay time TC = 175°C VCC = 400 V, IC = 12.5 A Rg = 4.7 W VGE = 15 V Inductive Load TC = 175°C VCC = 400 V, IC = 25 A Rg = 4.7 W VGE = 15 V Inductive Load mJ ns Fall time − 42 − Eon Turn−on switching loss − 578.90 − Eoff Turn−off switching loss − 406.80 − Ets Total switching loss − 985.70 − Qg Total Gate Charge − 99.7 − nC Qge Gate to Emitter Charge − 18.3 − nC Qgc Gate to collector Charge − 25.90 − nC VCE = 400 V, IC = 50 A, VGE = 15 V mJ DIODE CHARACTERISTICS Forward voltage IF = 50 A, Tc = 25°C IF = 50 A, Tc = 175°C − − 2 1.6 2.6 − V Reverse Recovery Energy IF = 50 A, dlF/dt = 200 A/ms, Tc=175°C − 80.14 − mJ Trr Diode Reverse Recovery Time IF = 50 A, dlF/dt = 200 A/ms IF = 50 A, dlF/dt = 200 A/ms, Tc = 175°C − 35.60 201 − nS Qrr Diode Reverse Recovery Charge IF = 50 A, dlF/dt = 200 A/ms IF = 50 A, dlF/dt = 200 A/ms, Tc = 175°C − 66.22 1135.65 − nC VF Erec Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGHL50T65SQDT TYPICAL CHARACTERISTICS 200 20 V 15 V 12 V 10 V 150 Collector Current, IC [A] Collector Current, IC [A] 200 VGE = 8 V 100 50 0 TJ = 25°C 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] Figure 1. Typical Output Characteristics (TJ = 255C) 100 50 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 5 Figure 3. Typical Saturation Voltage Characteristics Common Emitter TJ = 25°C 16 12 IC = 25 A 8 100 A 50 A 4 0 0 TJ = 175°C 0 12 8 16 Collector−Emitter Voltage, VCE [V] 1 2 3 4 Collector−Emitter Voltage, VCE [V] 5 Common Emitter VGE = 15 V 2,5 100 A 2 50 A 1,5 IC = 25 A 1 −100 −50 0 50 100 150 200 Collector−Emitter Case Temperature, TC [°C] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 50 3 Common Emitter VGE = 15 V TJ = 25°C TJ = 175°C 150 VGE = 8 V 100 Figure 2. Typical Output Characteristics (TJ = 1755C) Collector−Emitter Voltage, VCE [V]] Collector Current, IC [A] 200 150 0 5 20 V 15 V 12 V 10 V 20 16 Figure 5. Saturation Voltage vs. VGE (TJ = 255C) IC = 25 A 12 100 A 50 A 8 4 0 20 Common Emitter TJ = 175°C 0 4 8 12 16 Collector−Emitter Voltage, VCE [V] Figure 6. Saturation Voltage vs. VGE (TJ = 1755C) www.onsemi.com 4 20 FGHL50T65SQDT TYPICAL CHARACTERISTICS (continued) 15 Cies Gate−Emitter Voltage, VCE [V] Capacitance [pF] 10000 1000 Coes 100 Cres 10 1 Common Emitter VGE = 0 V, f = 1 MHz TJ = 25°C 1 10 Collector−Emitter Voltage, VCE [V] Figure 7. Capacitance Characteristics Switching Time [ns] Switching Time [ns] td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TJ = 25°C TJ = 175°C 0 10 20 30 40 Gate Resistance, Rg [W] 3 0 20 Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TJ = 25°C TJ = 175°C Switching Time [ns] Eon Eoff Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TJ = 25°C TJ = 175°C 10 20 30 40 Gate Resistance, Rg [W] 100 td(off) 100 tr 10 200 0 40 60 80 Gate Charge, Qg [nC] 20 30 40 Gate Resistance, Rg [W] 50 Figure 10. Turn−Off Characteristics vs. Gate Resistance 5000 Switching Loss [mJ] 6 10 50 Figure 9. Turn−on Characteristics vs. Gate Resistance 1000 400 V 300 V 1000 tr 100 VCC = 200 V 9 Figure 8. Gate Charge Characteristic 100 10 12 0 30 Common Emitter TJ = 25°C 100 Figure 11. Switching Loss vs Gate Resistance tr td(on) 10 50 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C 0 120 30 60 90 Collector Current, IC [A] 150 Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGHL50T65SQDT TYPICAL CHARACTERISTICS (continued) 10000 500 td(off) Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C 10 1 0 25 50 75 100 125 Collector Current, IC [A] 1000 Eoff 10 150 0 25 50 75 100 125 Collector Current, IC [A] 150 Figure 14. Switching Loss vs. Collector Current 250 300 200 TJ = 75°C 150 Square Wave TJ ≤ 175C, D = 0.5, VCE = 400 V VGE = 15/0 V RG = 4.7 W 100 TJ = 100°C 100 50 0 1 000 1 ms 10 10 ms DC *Notes: 1. TJ = 25°C 2. TJ = 175°C 3. Single Pulse 1 1 Reverse Recovery Current, Irr [A] 16 100 TJ = 175°C 10 TJ = 25°C TJ = 75°C TJ = 25°C TJ = 75°C TJ = 175°C 0 1 2 3 4 Forward Voltage, VF [V] 10 100 1000 Collector − Emitter Voltage, VCE [V] Figure 16. SOA Characteristics (FBSOA) 300 1 10 ms 100 ms 0,1 10 000 100 000 1 000 000 Switching Frequency, f [Hz] Figure 15. Load Current vs. Frequency Forward Current, IF [A] Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C 100 Figure 13. Turn−Off Characteristics vs. Collector Current TJ = 25°C Collector Current, IC [A] Switching Loss [mJ] 100 Collector Current, IC [A] Switching Time [ns] Eon tr 12 Figure 17. Forward Characteristics di/dt = 200 A/ms di/dt = 100 A/ms 8 di/dt = 200 A/ms 4 0 5 TJ = 25°C TJ = 175°C di/dt = 100 A/ms 0 30 60 90 120 Forward Voltage, IF [A] Figure 18. Reverse Recover Current www.onsemi.com 6 150 FGHL50T65SQDT TYPICAL CHARACTERISTICS (continued) 1500 280 Stored Recovery Charge, Qrr [nC] TJ = 25°C TJ = 175°C 210 140 di/dt = 200 A/ms di/dt = 100 A/ms 70 0 0 30 60 90 120 Forward Voltage, IF [A] TJ = 25°C TJ = 175°C 1200 150 900 600 di/dt = 100 A/ms di/dt = 200 A/ms 300 0 0 Figure 19. Reverse Recovery Time 30 60 90 120 Forward Current, IF [A] Figure 20. Stored Charge 0,6 Thermal Response [Zthjc] 0.5 0,1 0.2 0.1 0.05 PDM 0.02 t1 t2 Duty Factor, D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc 0.01 Single Pulse 0,01 −5 10 10 −4 10 −3 10 −2 10 −1 10 0 10 1 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of IGBT 0,8 0.5 Thermal Response [Zthjc] Reverse Recovery Time, trr [ns] 350 0.2 0.1 0.1 0.05 0.02 0,01 0.01 PDM t1 t2 Duty Factor, D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc Single Pulse 0,001 10 −5 10 −4 10 −3 10 −2 10 −1 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 10 0 10 1 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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